a
Dual, Precision
JFET High-Speed Operational Amplifier
OP249
PIN CONNECTIONS
8-Lead Cerdip (Z Suffix),
8-Lead Plastic Mini-DIP
(P Suffix)
OUT A 1
–IN A 2
+IN A
V–
3
4
8 V+
A
B
7 OUT B
– + + –
6 –IN B
5 +IN B
FEATURES
Fast Slew Rate: 22 V/ s Typ
Settling Time (0.01%): 1.2 s Max
Offset Voltage: 300 V Max
High Open-Loop Gain: 1000 V/mV Min
Low Total Harmonic Distortion: 0.002% Typ
Improved Replacement for AD712, LT1057, OP215,
TL072, and MC34082
APPLICATIONS
Output Amplifier for Fast D/As
Signal Processing
Instrumentation Amplifiers
Fast Sample/Holds
Active Filters
Low Distortion Audio Amplifiers
Input Buffer for A/D Converters
Servo Controllers
GENERAL DESCRIPTION
8-Lead SO
(S Suffix)
+IN A
V–
+IN B
–IN B
1
2
3
4
–A
+
+
–B
8
7
6
5
–IN A
OUT A
V+
OUT B
The OP249 is a high speed, precision dual JFET op amp, simi-
lar to the popular single op amp, the OP42. The OP249 outper-
forms available dual amplifiers by providing superior speed with
excellent dc performance. Ultrahigh open-loop gain (1 kV/mV
minimum), low offset voltage, and superb gain linearity makes
the OP249 the industry’s first true precision, dual high speed
amplifier.
With a slew rate of 22 V/µs typical and a fast settling time of less
than 1.2
µs
maximum to 0.01%, the OP249 is an ideal choice
0.010
T
A
= 25 C
V
S
= 15V
V
O
= 10V p-p
R
L
= 10k
A
V
= 1
for high speed bipolar D/A and A/D converter applications. The
excellent dc performance of the OP249 allows the full accuracy
of high resolution CMOS D/As to be realized.
Symmetrical slew rate, even when driving large load, such as,
600
Ω
or 200 pF of capacitance and ultralow distortion, make
the OP249 ideal for professional audio applications, active
filters, high speed integrators, servo systems, and buffer amplifiers.
The OP249 provides significant performance upgrades to the
TL072, AD712, OP215, MC34082, and the LT1057.
870ns
100
90
100
90
10
0%
10
0%
10mV
500ns
5V
1µs
0.001
20
100
1k
10k 20k
Figure 1. Fast Settling (0.01%)
Figure 2. Low Distortion A
V
= 1,
R
L
= 10 k
Ω
Figure 3. Excellent Output Drive,
R
L
= 600
Ω
REV. E
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
OP249–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V =
S
15 V, T
A
= 25 C, unless otherwise noted.)
Min
OP249A
Typ
0.2
Max
0.5
0.8
75
25
±
11
–12.5
90
12
1400
12.5
–12.5
36
±
20
18
3.5
–33
5.6
22
4.7
0.9
55
10
12
6
35
2
75
26
17
16
0.003
±
15
±
50
7.0
18
3.5
1.2
±
20
–33
5.6
22
4.7
0.9
55
10
12
6
35
2
75
26
17
16
0.003
±
15
80
31.6
500
±
12.0
–12.5
36
±
50
7.0
–12.5
90
12
1200
12.5
50
Min
OP249F
Typ
0.2
1.5
30
6
12.5
Max
0.7
1.0
75
25
Unit
mV
mV
µV/Month
pA
pA
V
V
V
dB
µV/V
V/mV
V
V
V
mA
mA
mA
mA
V/µs
MHz
µs
Degrees
Ω
pF
Ω
µV
p-p
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
V
Parameter
Offset Voltage
Long Term Offset Voltage
Offset Stability
Input Bias Current
Input Offset Current
Input Voltage Range
Symbol
V
OS
V
OS
I
B
I
OS
IVR
Conditions
(Note 1)
V
CM
= 0 V, T
J
= 25°C
V
CM
= 0 V, T
J
= 25°C
(Note 2)
1.5
30
6
12.5
±
11
Common-Mode Rejection
Power-Supply Rejection Ratio
Large-Signal Voltage Gain
Output Voltage Swing
CMR
PSRR
A
VO
V
O
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
V
O
=
±
10 V, R
L
= 2 kΩ
R
L
= 2 kΩ
80
1000
±
12.0
Short-Circuit Current Limit
I
SC
Output Shorted to
Ground
No Load, V
O
= 0 V
R
L
= 2 kΩ, C
L
= 50 pF
(Note 3)
10 V Step 0.01%
4
0 dB Gain
Supply Current
Slew Rate
Gain-Bandwidth Product
Settling Time
Phase Margin
Differential Input Impedance
Open-Loop Output Resistance
Voltage Noise
Voltage Noise Density
I
SY
SR
GBW
t
S
θ
0
Z
IN
R
O
e
n
p-p
e
n
1.2
Current Noise Density
Voltage Supply Range
i
n
V
S
0.1 Hz to 10 Hz
f
O
= 10 Hz
f
O
= 100 Hz
f
O
= 1 kHz
f
O
= 10 kHz
f
O
= 1 kHz
±
4.5
±
18
±
4.5
±
18
NOTES
1
Long-term offset voltage is guaranteed by a 1000 HR life test performed on three independent wafer lots at 125
°C
with LTPD of three.
2
Guaranteed by CMR test.
3
Guaranteed by design.
4
Settling time is sample tested.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V =
S
15 V, T
A
= 25 C, unless otherwise noted.)
Min
OP249G
Typ
0.4
40
10
12.5
±
11
–12.0
90
12
1100
12.5
–12.5
36
±
20
±
50
–33
5.6
22
4.7
0.9
55
10
12
6
7.0
Max
2.0
75
25
Unit
mV
pA
pA
V
V
V
dB
µV/V
V/mV
V
V
V
mA
mA
mA
mA
V/µs
MHz
µs
Degree
Ω
pF
Parameter
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Symbol
V
OS
I
B
I
OS
IVR
Conditions
V
CM
= 0 V, T
J
= 25°C
V
CM
= 0 V, T
J
= 25°C
(Note 1)
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
V
O
=
±
10 V; R
L
= 2 kΩ
R
L
= 2 kΩ
Common-Mode Rejection
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Swing
CMR
PSRR
A
VO
V
O
76
500
±
12.0
50
Short-Circuit Current Limit
I
SC
Output Shorted to Ground
Supply Current
Slew Rate
Gain Bandwidth Product
Settling Time
Phase Margin
Differential Input Impedance
I
SY
SR
GBW
t
S
θ
0
Z
IN
No Load; V
O
= 0 V
R
L
= 2 kΩ, C
L
= 50 pF
(Note 2)
10 V Step 0.01%
0 dB Gain
18
1.2
–2–
REV. E
OP249
Parameter
Open Loop Output Resistance
Voltage Noise
Voltage Noise Density
Symbol
R
O
e
n
p-p
e
n
Conditions
0.1 Hz to 10 Hz
f
O
= 10 Hz
f
O
= 100 Hz
f
O
= 1 kHz
f
O
= 10 kHz
f
O
= 1 kHz
±
4.5
Min
OP249G
Typ
35
2
75
26
17
16
0.003
±
15
Max
Unit
Ω
µV
p-p
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
V
Current Noise Density
Voltage Supply Range
NOTES
1
Guaranteed by CMR test.
2
Guaranteed by design.
i
n
V
S
±
18
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
Parameter
Offset Voltage
Offset Voltage Temperature
Coefficient
Input Bias Current
Input Offset Current
Input Voltage Range
Symbol
V
OS
TCV
OS
I
B
I
OS
IVR
(@ V
S
= 15 V, –40 C
≤
T
A
≤
+85 C for F grades and –55 C
≤
T
A
≤
+125 C for A grade
unless otherwise noted.)
Min
OP249A
Typ
0.12
1
4
0.04
12.5
±
11
–12.5
110
5
1400
12.5
–12.5
Max
1.0
5
20
4
±
11
80
50
250
±
12
–12.5
±
60
7.0
±
18
5.6
±
60
7.0
–12.5
90
7
1200
12.5
100
Min
OP249F
Typ
0.5
2.2
0.3
0.02
12.5
Max
1.1
6
4.0
1.2
Unit
mV
µV/°C
nA
nA
V
V
V
dB
µV/V
V/mV
V
V
V
mA
mA
Conditions
(Note 1)
(Note 1)
(Note 2)
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
R
L
= 2 kΩ; V
O
=
±
10 V
R
L
= 2 kΩ
Common-Mode Rejection
Power-Supply Rejection Ratio
Large-Signal Voltage Gain
Output Voltage Swing
CMR
PSRR
A
VO
V
O
76
500
±
12
±
10
Short-Circuit Current Limit
Supply Current
I
SC
I
SY
Output Shorted to
Ground
No Load, V
O
= 0 V
5.6
NOTES
1
T
J
= 85°C for F Grades; T
J
= 125°C for A Grade.
2
Guaranteed by CMR test.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
Parameter
Offset Voltage
Offset Voltage Temperature
Coefficient
Input Bias Current
Input Offset Current
Input Voltage Range
Symbol
V
OS
TCV
OS
I
B
I
OS
IVR
(@ V
S
=
15 V, –40 C
≤
T
A
≤
+85 C for unless otherwise noted.)
Min
OP249G
Typ
1.0
6
0.5
0.04
12.5
±
11
–12.5
95
10
1200
12.5
–12.5
Max
3.6
25
4.5
1.5
Unit
mV
µV/°C
nA
nA
V
V
V
dB
µV/V
V/mV
V
V
V
mA
mA
Conditions
(Note 1)
(Note 1)
(Note 2)
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
R
L
= 2 kΩ; V
O
=
±
10 V
R
L
= 2 kΩ
Common-Mode Rejection
Power-Supply Rejection Ratio
Large-Signal Voltage Gain
Output Voltage Swing
CMR
PSRR
A
VO
V
O
76
250
±
12.0
±
18
100
Short-Circuit Current Limit
Supply Current
NOTES
1
T
J
= 85°C.
2
Guaranteed by CMR test.
I
SC
I
SY
Output Shorted to Ground
No Load, V
O
= 0 V
5.6
±
60
7.0
Specifications subject to change without notice.
REV. E
–3–
OP249
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . 36 V
Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range . . . . . . . . . . . . –65°C to +175°C
Operating Temperature Range
OP249A (Z) . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
OP249E, F (Z) . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
OP249G (P, S) . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature
OP249 (Z) . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C
OP249 (P, S) . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300°C
Package Type
8-Lead Hermetic DIP (Z)
8-Lead Plastic DIP (P)
8-Lead SO (S)
3
JA
JC
Unit
°C/W
°C/W
°C/W
134
96
150
12
37
41
NOTES
1
Absolute maximum ratings apply to packaged parts, unless otherwise noted.
2
For supply voltages less than
±
18 V, the absolute maximum input voltage is equal
to the supply voltage.
3
θ
is specified for worst-case mounting conditions, i.e.,
θ
is specified for device
JA
JA
in socket for cerdip and P-DIP packages;
θ
JA
is specified for device soldered to
printed circuit board for SO package.
ORDERING GUIDE
*
Model
OP249AZ
OP249FZ
OP249GP
OP249GS
*
OP249GS-REEL
OP249GS-REEL7
Temperature Range
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package Descriptions
8-Lead Cerdip
8-Lead Cerdip
8-Lead Plastic DIP
8-Lead SO
8-Lead SO
8-Lead SO
Package Options
Q-8
Q-8
N-8
SO-8
SO-8
SO-8
NOTES
*For
availability and burn-in information on SO and PLCC packages, contact your local sales office.
For Military processed devices, please refer to the Standard Microcircuit Drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp
SMD Part Number
5962-9151901M2A
5962-9151901MGA
5962-9151901MPA
ADI Equivalent
OP249ARCMDA
OP249AJMDA
OP249AZMDA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP249 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. E
Typical Performance Characteristics–OP249
120
100
OPEN-LOOP GAIN – dB
65
T
A
= 25 C
V
S
= 15V
R
L
= 2k
10
GAIN BANDWIDTH PRODUCT – MHz
COMMON-MODE REJECTION – dB
140
120
100
80
60
40
20
0
100
T
A
= 25 C
V
S
= 15V
V
S
=
60
15V
80
60
40
0
PHASE – C
PHASE MARGIN – C
8
m
GAIN
45
90
55
GBW
50
6
PHASE
20
0
–20
1k
10k
m = 55
135
180
225
100M
4
100k
1M
10M
FREQUENCY – Hz
45
–75
–50 –25 0
25 50 75
TEMPERATURE – C
2
100 125
1k
10k
100k
FREQUENCY – Hz
1M
10M
TPC 1. Open-Loop Gain, Phase vs.
Frequency
TPC 2. Gain Bandwidth Product,
Phase Margin vs. Temperature
TPC 3. Common-Mode Rejection vs.
Frequency
120
28
T
A
= 25 C
V
S
= 15V
28
V
S
= 15V
R
L
= 2k
C
L
= 50pF
T
A
= 25 C
V
S
= 15V
R
L
= 2k
POWER SUPPLY REJECTION – dB
100
26
26
SLEW RATE – V/ s
80
+PSRR
60
–PSRR
40
24
–SR
22
+SR
SLEW RATE – V/ s
24
22
20
20
20
0
10
18
16
–75
18
16
100
10k
100k
1k
FREQUENCY – Hz
1M
–50 –25 0
25 50 75
TEMPERATURE – C
100 125
0
0.2
0.4
0.6
0.8
1.0
DIFFERENTIAL INPUT VOLTAGE – Volts
TPC 4. Power Supply Rejection vs.
Frequency
TPC 5. Slew Rate vs. Temperature
TPC 6. Slew Rate vs. Differential
Input Voltage
35
T
A
= 25 C
V
S
= 15V
10
100
VOLTAGE NOISE DENSITY – nV Hz
T
A
= 25 C
V
S
= 15V
A
VCL
= 1
0.1%
8
OUTPUT STEP SIZE – Volts
30
SLEW RATE – V/ s
6
4
2
0
–2
–4
–6
–8
80
T
A
= 25 C
V
S
= 15V
25
NEGATIVE
0.01%
60
20
POSITIVE
0.01%
40
15
0.1%
10
5
20
–10
0
100
200
300
400
CAPACITIVE LOAD – pF
500
0
200
400
600
800
SETTLING TIME – ns
1000
0
0
100
1k
FREQUENCY – Hz
10k
TPC 7. Slew Rate vs. Capacitive
Load
TPC 8. Settling Time vs. Step Size
TPC 9. Voltage Noise Density vs.
Frequency
REV. E
–5–
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