1,048,576-Bit (128k x 8) Low Voltage EPROM
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
零件包装代码 | QFJ |
包装说明 | QCCJ, LDCC32,.5X.6 |
针数 | 32 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
最长访问时间 | 250 ns |
I/O 类型 | COMMON |
JESD-30 代码 | R-PQCC-J32 |
JESD-609代码 | e0 |
长度 | 13.995 mm |
内存密度 | 1048576 bi |
内存集成电路类型 | OTP ROM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 32 |
字数 | 131072 words |
字数代码 | 128000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 128KX8 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | QCCJ |
封装等效代码 | LDCC32,.5X.6 |
封装形状 | RECTANGULAR |
封装形式 | CHIP CARRIER |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 3.3 V |
认证状态 | Not Qualified |
座面最大高度 | 3.56 mm |
最大待机电流 | 0.00005 A |
最大压摆率 | 0.015 mA |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | J BEND |
端子节距 | 1.27 mm |
端子位置 | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 11.455 mm |
Base Number Matches | 1 |
NM27LV010VE250 | NM27LV010 | NM27LV010T200 | NM27LV010V200 | NM27LV010VE200 | NM27LV010V250 | NM27LV010TE250 | NM27LV010T250 | NM27LV010TE200 | |
---|---|---|---|---|---|---|---|---|---|
描述 | 1,048,576-Bit (128k x 8) Low Voltage EPROM | 1,048,576-Bit (128k x 8) Low Voltage EPROM | 1,048,576-Bit (128k x 8) Low Voltage EPROM | 1,048,576-Bit (128k x 8) Low Voltage EPROM | 1,048,576-Bit (128k x 8) Low Voltage EPROM | 1,048,576-Bit (128k x 8) Low Voltage EPROM | 1,048,576-Bit (128k x 8) Low Voltage EPROM | 1,048,576-Bit (128k x 8) Low Voltage EPROM | 1,048,576-Bit (128k x 8) Low Voltage EPROM |
是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | QFJ | - | TSOP1 | QFJ | QFJ | QFJ | TSOP1 | TSOP1 | TSOP1 |
包装说明 | QCCJ, LDCC32,.5X.6 | - | TSOP1, TSSOP32,.8,20 | QCCJ, LDCC32,.5X.6 | QCCJ, LDCC32,.5X.6 | QCCJ, LDCC32,.5X.6 | TSOP1, TSSOP32,.8,20 | TSOP1, TSSOP32,.8,20 | TSOP1, TSSOP32,.8,20 |
针数 | 32 | - | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
Reach Compliance Code | unknow | - | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 250 ns | - | 200 ns | 200 ns | 200 ns | 250 ns | 250 ns | 250 ns | 200 ns |
I/O 类型 | COMMON | - | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PQCC-J32 | - | R-PDSO-G32 | R-PQCC-J32 | R-PQCC-J32 | R-PQCC-J32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 |
JESD-609代码 | e0 | - | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 13.995 mm | - | 18.4 mm | 13.995 mm | 13.995 mm | 13.995 mm | 18.4 mm | 18.4 mm | 18.4 mm |
内存密度 | 1048576 bi | - | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi |
内存集成电路类型 | OTP ROM | - | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM |
内存宽度 | 8 | - | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 32 | - | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
字数 | 131072 words | - | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
字数代码 | 128000 | - | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
工作模式 | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | - | 70 °C | 70 °C | 85 °C | 70 °C | 85 °C | 70 °C | 85 °C |
组织 | 128KX8 | - | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
输出特性 | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | QCCJ | - | TSOP1 | QCCJ | QCCJ | QCCJ | TSOP1 | TSOP1 | TSOP1 |
封装等效代码 | LDCC32,.5X.6 | - | TSSOP32,.8,20 | LDCC32,.5X.6 | LDCC32,.5X.6 | LDCC32,.5X.6 | TSSOP32,.8,20 | TSSOP32,.8,20 | TSSOP32,.8,20 |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | - | SMALL OUTLINE, THIN PROFILE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
并行/串行 | PARALLEL | - | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电源 | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 3.56 mm | - | 1.2 mm | 3.56 mm | 3.56 mm | 3.56 mm | 1.2 mm | 1.2 mm | 1.2 mm |
最大待机电流 | 0.00005 A | - | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A |
最大压摆率 | 0.015 mA | - | 0.015 mA | 0.015 mA | 0.015 mA | 0.015 mA | 0.015 mA | 0.015 mA | 0.015 mA |
最大供电电压 (Vsup) | 3.6 V | - | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3 V | - | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
标称供电电压 (Vsup) | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | - | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | - | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | - | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | J BEND | - | GULL WING | J BEND | J BEND | J BEND | GULL WING | GULL WING | GULL WING |
端子节距 | 1.27 mm | - | 0.5 mm | 1.27 mm | 1.27 mm | 1.27 mm | 0.5 mm | 0.5 mm | 0.5 mm |
端子位置 | QUAD | - | DUAL | QUAD | QUAD | QUAD | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 11.455 mm | - | 8 mm | 11.455 mm | 11.455 mm | 11.455 mm | 8 mm | 8 mm | 8 mm |
厂商名称 | - | - | - | Fairchild | Fairchild | Fairchild | Fairchild | Fairchild | Fairchild |
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