SHANGHAI SUNRISE ELECTRONICS CO., LTD.
2CK120
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250
o
C/10S/9.5mm lead length
at 5 lbs tension
TECHNICAL
SPECIFICATION
DO - 35
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
1.0 (25.4)
MIN.
.060 (1.5)
.090 (2.3) DIA.
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
.018 (0.46)
.022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Repetitive Forward Peak Current
Forward Voltage (I
F
=10mA)
Reverse Current (V
R
=20V)
Reverse Current (V
R
=75V)
Reverse Current (V
R
=20V,T
J
=100
o
C)
Capacitance (note 1)
Reverse Charge (I
F
=10mA)
Thermal Resistance (junction to ambient, note 2)
SYMBOL
V
R
V
RM
I
O
I
FRM
V
F
I
R1
I
R2
Ct
Qr
R
θ
(ja)
VALUE
75
100
150
400
1
25
5
50
4
57
0.35
UNITS
V
V
mA
mA
V
nA
µA
µA
pF
pC
o
C/mW
o
T
STG,
T
J
Operating Junction and Storage Temperature Range
-55 +175
Notes:
1. V
R
=0V, f=1 MHz
2. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
C
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