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28F128J3A

产品描述2M X 16 FLASH 2.7V PROM, 110 ns, PBGA64
产品类别存储   
文件大小318KB,共58页
制造商Intel(英特尔)
官网地址http://www.intel.com/
下载文档 详细参数 选型对比 全文预览

28F128J3A概述

2M X 16 FLASH 2.7V PROM, 110 ns, PBGA64

28F128J3A规格参数

参数名称属性值
功能数量1
端子数量64
最大工作温度85 Cel
最小工作温度-40 Cel
最大供电/工作电压3.6 V
最小供电/工作电压2.7 V
额定供电电压3 V
最大存取时间110 ns
加工封装描述BGA-64
状态ACTIVE
包装形状RECTANGULAR
包装尺寸GRID ARRAY, THIN PROFILE
表面贴装Yes
端子形式BALL
端子间距1 mm
端子涂层TIN LEAD
端子位置BOTTOM
包装材料PLASTIC/EPOXY
温度等级INDUSTRIAL
内存宽度16
组织2M X 16
存储密度3.36E7 deg
操作模式ASYNCHRONOUS
位数2.10E6 words
位数2M
备用存储器宽度8
内存IC类型FLASH 2.7V PROM
串行并行PARALLEL

文档预览

下载PDF文档
3 Volt Intel
®
StrataFlash™ Memory
28F128J3A, 28F640J3A, 28F320J3A (x8/x16)
Preliminary Datasheet
Product Features
s
s
s
s
s
High-Density Symmetrically-Blocked
Architecture
— 128 128-Kbyte Erase Blocks (128 M)
64
128-Kbyte Erase Blocks (64 M)
— 32 128-Kbyte Erase Blocks (32 M)
High Performance Interface Asynchronous
Page Mode Reads
— 110/25 ns Read Access Time (32 M)
— 120/25 ns Read Access Time (64 M)
— 150/25 ns Read Access Time (128 M)
2.7 V–3.6 V V
CC
Operation
128-bit Protection Register
— 64-bit Unique Device Identifier
— 64-bit User Programmable OTP Cells
Enhanced Data Protection Features
Absolute Protection with V
PEN
= GND
— Flexible Block Locking
— Block Erase/Program Lockout during
Power Transitions
s
s
s
s
s
s
Packaging
— 56-Lead TSOP Package
— 64-Ball Intel
®
Easy BGA Package
Cross-Compatible Command Support Intel
Basic Command Set
— Common Flash Interface
— Scalable Command Set
32-Byte Write Buffer
— 6 µs per Byte Effective Programming
Time
12.8M Total Min. Erase Cycles (128 Mbit)
6.4M Total Min. Erase Cycles (64 Mbit)
3.2M Total Min. Erase Cycles (32 Mbit)
— 100K Minimum Erase Cycles per Block
Automation Suspend Options
— Block Erase Suspend to Read
— Block Erase Suspend to Program
— Program Suspend to Read
0.25 µ Intel
®
StrataFlash™ Memory
Technology
Capitalizing on Intel’s 0.25 µ generation two-bit-per-cell technology, second generation Intel
®
StrataFlash™ memory products provide 2X the bits in 1X the space, with new features for mainstream
performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring
reliable, two-bit-per-cell storage technology to the flash market segment.
Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory devices take advantage of over one billion units of manufacturing experience since 1987. As a
result, Intel StrataFlash components are ideal for code and data applications where high density and low
cost are required. Examples include networking, telecommunications, digital set top boxes, audio
recording, and digital imaging.
By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design
migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation
Intel StrataFlash memory (28F640J5 and 28F320J5) devices.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel
®
0.25 micron ETOX™ VI process technology, Intel StrataFlash memory provides
the highest levels of quality and reliability.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290667-008
April 2001

28F128J3A相似产品对比

28F128J3A 28F128
描述 2M X 16 FLASH 2.7V PROM, 110 ns, PBGA64 2M X 16 FLASH 2.7V PROM, 110 ns, PBGA64
功能数量 1 1
端子数量 64 64
最大工作温度 85 Cel 85 Cel
最小工作温度 -40 Cel -40 Cel
最大供电/工作电压 3.6 V 3.6 V
最小供电/工作电压 2.7 V 2.7 V
额定供电电压 3 V 3 V
最大存取时间 110 ns 110 ns
加工封装描述 BGA-64 BGA-64
状态 ACTIVE ACTIVE
包装形状 RECTANGULAR RECTANGULAR
包装尺寸 GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE
表面贴装 Yes Yes
端子形式 BALL BALL
端子间距 1 mm 1 mm
端子涂层 TIN LEAD TIN LEAD
端子位置 BOTTOM BOTTOM
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY
温度等级 INDUSTRIAL INDUSTRIAL
内存宽度 16 16
组织 2M X 16 2M X 16
存储密度 3.36E7 deg 3.36E7 deg
操作模式 ASYNCHRONOUS ASYNCHRONOUS
备用存储器宽度 8 8
内存IC类型 FLASH 2.7V PROM FLASH 2.7V PROM
串行并行 PARALLEL PARALLEL
位数 2M 2M
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