SSP1N50B/SSS1N50B
November 2001
SSP1N50B/SSS1N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
•
•
•
•
•
•
1.5A, 500V, R
DS(on)
= 5.3Ω @V
GS
= 10 V
Low gate charge ( typical 8.3 nC)
Low Crss ( typical 5.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
SSP1N50B
500
1.5
0.97
5.0
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
SSS1N50B
1.5 *
0.97 *
5.0 *
100
1.5
3.6
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
36
0.29
-55 to +150
300
23
0.19
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP1N50B
3.44
0.5
62.5
SSS1N50B
5.37
--
62.5
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
SSP1N50B/SSS1N50B
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
500
--
--
--
--
--
--
0.54
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 0.75 A
V
DS
= 40 V, I
D
= 0.75 A
(Note 4)
2.0
--
--
--
4.1
1.8
4.0
5.3
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
260
25
5.5
340
33
7.2
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 400 V, I
D
= 1.5 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 250 V, I
D
= 1.5 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
14
40
35
35
8.3
1.5
3.4
40
90
80
80
11
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 1.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 1.5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
230
0.94
1.5
5.0
1.4
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 80mH, I
AS
= 1.5A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
1.5A, di/dt
≤
300A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
SSP1N50B/SSS1N50B
Typical Characteristics
10
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
10
0
150 C
o
10
-1
25 C
-55 C
※
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
o
o
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
10
-2
10
-1
-1
10
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
15
V
GS
= 10V
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
V
GS
= 20V
9
I
DR
, Reverse Drain Current [A]
12
10
0
150℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
6
※
Note : T
J
= 25
℃
3
0
1
2
3
4
5
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
V
DS
= 100V
10
400
V
DS
= 250V
V
GS
, Gate-Source Voltage [V]
Capacitance [pF]
300
C
iss
8
V
DS
= 400V
6
200
C
oss
100
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
C
rss
2
※
Note : I
D
= 1.5 A
0
-1
10
10
0
10
1
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
SSP1N50B/SSS1N50B
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 0.75 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
1
Operation in This Area
is Limited by R
DS(on)
10
1
Operation in This Area
is Limited by R
DS(on)
100
µ
s
I
D
, Drain Current [A]
I
D
, Drain Current [A]
1 ms
10
0
1 ms
10
0
10 ms
DC
10 ms
100 ms
DC
10
-1
10
-1
※
Notes :
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
o
※
Notes :
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
2
3
o
10
-2
10
0
10
1
10
-2
10
10
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for SSP1N50B
Figure 9-2. Maximum Safe Operating Area
for SSS1N50B
1.8
1.5
I
D
, Drain Current [A]
1.2
0.9
0.6
0.3
0.0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
Figure 10. Maximum Drain Current
vs Case Temperature
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
SSP1N50B/SSS1N50B
Typical Characteristics
(Continued)
(t), T h e r m a l R e s p o n s e
D = 0 .5
10
0
0 .2
0 .1
0 .0 5
-1
※
N o te s :
1 . Z
θ
J C
(t) = 3 .4 4
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
θ
JC
10
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
Z
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for SSP1N50B
(t), T h e r m a l R e s p o n s e
D = 0 .5
0
10
0 .2
0 .1
0 .0 5
0 .0 2
※
N o te s :
1 . Z
θ
J C
(t) = 5 .3 7
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
10
-1
0 .0 1
s in g le p u ls e
Z
θ
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for SSS1N50B
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
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