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SSN1N45B
SSN1N45B
450V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic ballasts based on half bridge
configuration.
Features
•
•
•
•
•
•
0.5A, 450V, R
DS(on)
= 4.25Ω @V
GS
= 10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical 6.5 pF)
100% avalanche tested
Improved dv/dt capability
Gate-Source Voltage
±
50V guaranteed
D
!
●
◀
▲
●
●
G
!
TO-92
GDS
SSN Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
SSN1N45B
450
0.5
0.32
4.0
±
50
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)
Power Dissipation (T
L
= 25°C)
108
0.5
0.25
5.5
0.9
2.5
0.02
-55 to +150
300
T
J
, T
stg
T
L
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJL
R
θJA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
Typ
--
--
Max
50
140
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
SSN1N45B
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 450 V, V
GS
= 0 V
V
DS
= 360 V, T
C
= 125°C
V
GS
= 50 V, V
DS
= 0 V
V
GS
= -50 V, V
DS
= 0 V
450
--
--
--
--
--
--
0.5
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250 mA
V
GS
= 10 V, I
D
= 0.25 A
V
DS
= 50 V, I
D
= 0.25 A
2.3
3.5
--
--
3.0
4.2
3.4
0.7
3.7
4.9
4.25
--
V
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
185
29
6.5
240
40
8.5
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 360 V, I
D
= 0.5 A,
V
GS
= 10 V
(Note 4,5)
V
DD
= 225 V, I
D
= 0.5 A,
R
G
= 25
Ω
(Note 4,5)
--
--
--
--
--
--
--
7.5
21
23
36
6.5
0.9
3.2
25
50
55
80
8.5
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 0.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 0.5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
102
0.26
0.5
4.0
1.4
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 75mH, I
AS
= 1.6A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
0.5A, di/dt
≤
300A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
6. a) Reference point of the R
θ
JL
is the drain lead
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance. R
θ
CA
is determined by the user’s board design)
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
SSN1N45B
Typical Characteristics
10
0
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
I
D
, Drain Current [A]
10
0
150℃
25℃
-55℃
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
※
Notes :
1. V
DS
= 50V
2. 250μ s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
10
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
8
V
GS
= 10V
V
GS
= 20V
I
DR
, Reverse Drain Current [A]
10
0
6
4
150℃
25℃
2
※
Note : T
J
= 25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
0
1
2
3
4
5
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
V
DS
= 90V
10
300
V
DS
= 225V
V
DS
= 360V
C
iss
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
200
C
oss
6
100
C
rss
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
4
2
※
Note : I
D
= 0.5 A
0
-1
10
10
0
10
1
0
0
1
2
3
4
5
6
7
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
SSN1N45B
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Norm
alized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 0.25 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
0.6
Operation in This Area
is Limited by R
DS(on)
10
1
0.5
I
D
, Drain Current [A]
10
0
10
-1
DC
※
Notes :
10
-2
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-3
10
0
10
1
10
2
10
3
I
D
, Drain Current [A]
100
µ
s
1 ms
10 ms
100 ms
1s
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
2
Z (t), T h e rm a l R e s p o n s e
D = 0 .5
10
1
0 .2
0 .1
0 .0 5
P
DM
t
1
t
2
s i n g l e p u ls e
※
N o te s :
1 . Z
θ
J L
(t) = 5 0
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
L
= P
D M
* Z
θ
J L
(t)
10
0
0 .0 2
0 .0 1
θ
J L
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t
1
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
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