^s.rni-Conduako't Lpioducti, {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FEATURES
• 1500 WATTS PEAK POWER DISSIPATION
• AVAILABLE IN STANDOFF VOLTAGES FROM 5.5V TO 185V
• 00-13 HERMETICALLY SEALED PACKAGE
• BIDIRECTIONAL
• UL RECOGNIZED (1N6070A)
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N6O36
thru
1N6072A
BIDIRECTIONAL
TRANSIENT
ABSORPTION ZENER
DESCRIPTION
These TAZ devices are a series of Bidirectional Silicon Transient Suppressors
used in AC applications where large voltage transients can permanently
damage voltage-sensitive components.
These devices are manufactured using two silicon PN, low voltage junction in a
back to back configuration. They are characterized by their high surge
capability, extremely fast response time, and low impedance, (R
on
).
TAZ has a peak pulse power rating of 1500 watts for one millisecond and there-
fore can be used in applications where induced lightning on rural or remote
transmission lines represents a hazard to electronic circuitry. The response
time of TAZ clamping action is less than (5x 10
M
) sec; therefore, they can protect
Integrated Circuits, MOS devices, Hybrids, and other voltage-sensitive semi-
conductors and components.
This series of devices has been proven very effective as EMP Suppressors.
MAXIMUM RATINGS
.235 _ MM.
547 DIA, |mm|
10 MAX.
DM.
IH
MAX. DIA (mm)
21 MAI.
5 33 MAX. (mm)
1500 watts of peak pulse power dissipation at 25° C
tclampin* (0 volts to V
(
BR> min): less than 5 x 10-
9
seconds
Operating and storage temperatures -65° C to + 175° C
Steady state power dissipation: 1.0 watts at T
L
= 25°C, 3/8" from body.
Repetition rate (duty cycle): .01%
ELECTRICAL CHARACTERISTICS
Clamping Factor: 1.33 @ full rated power
1.20 @ 50% rated power
Clamping Factor: The ratio of the actual Vrj (Clamping Voltage) to the
) (Breakdown Voltage) as measured on a specific
10,000
device.
1000
I
m
Q.
C
1,000
1000
8
100ns
%sec lOOysec ims
Ip — PulM Tim*
MECHANICAL
CHARACTERISTICS
Standard DO-13 package, glass and
metal hermetically sealed
WEIGHT: 1.5 grams (approximate)
F I N I S H : All external surfaces are
corrosion resistant and leads
solderahle.
POLARITY: Bidirectional not
marked,
1000
idms 100ms
6
BV: Breakdown Voltage in Volts
MOUNTING POSITION: Any.
FIGURE 1
FIGURE 2 TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE
N.I .Semi-t urn/utters reserves the right In change tell conditions, parameter limits and packuge dimensions without notice
Information fiinrnhed by Nl Scmr-C undutlors it believed to he both accurate and reliable .it the lime of going to press. However \
Semi C oiiJutltiri .IJMIIIICS no revpoiisibilify fur ;m> erfitM IT I'lnivsinns Jisuuvvred in it* use M Stini<imliKli rs criwur:l!je:i
NXP MCU
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