AP4525GEH
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Thermal Performance
▼
Fast Switching Performance
S1
G1
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
40V
28mΩ
15A
-40V
42mΩ
-12A
S2
G2
P-CH BV
DSS
TO-252-4L
R
DS(ON)
I
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
40
±16
15.0
12.0
50
10.4
0.083
-55 to 150
-55 to 150
Rating
N-channel
P-channel
-40
±16
-12.0
-10.0
-50
V
V
A
A
A
W
W/℃
℃
℃
Units
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
12
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200809235
AP4525GEH
N-CH Electrical Characteristics@ T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
6
-
-
-
9
1.5
4
7
20
20
4
580
100
70
2
Max. Units
-
-
28
32
3
-
1
25
±30
14
-
-
-
-
-
-
930
-
-
3
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=40V, V
GS
=0V
V
GS
=±16V
I
D
=6A
V
DS
=20V
V
GS
=4.5V
V
DS
=20V
I
D
=6A
R
G
=3Ω,V
GS
=10V
R
D
=3.3Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=32V, V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=15A, V
GS
=0V
I
S
=6A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
20
15
Max. Units
1.8
-
-
V
ns
nC
2
AP4525GEH
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
2
Static Drain-Source On-Resistance
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-5A
V
GS
=-4.5V, I
D
=-3A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5A
V
DS
=-40V, V
GS
=0V
V
GS
=±16V
I
D
=-5A
V
DS
=-20V
V
GS
=-4.5V
V
DS
=-20V
I
D
=-5A
R
G
=3Ω,V
GS
=-10V
R
D
=4Ω
V
GS
=0V
V
DS
=-20V
f=1.0MHz
f=1.0MHz
Min.
-40
-
-
-
-0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.03
-
-
-
5
-
-
-
9
2
5
8.5
15
27
25
770
165
115
6
Max.
-
-
42
60
-2.5
-
-1
-25
±30
24
-
-
-
-
-
-
1230
-
-
9
Units
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃,I
D
=-1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-32V, V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-12A, V
GS
=0V
I
S
=-5A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
20
16
Max.
-1.8
-
-
Units
V
ns
nC
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4525GEH
N-Channel
50
50
40
T
A
= 25
o
C
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
40
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
30
30
20
20
V
G
=3.0V
10
V
G
=3.0V
10
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
I
D
=4A
100
T
A
=25 C
Normalized R
DS(ON)
o
1.6
I
D
=6A
V
G
=10V
R
DS(ON)
(m
Ω
)
80
60
1.2
40
20
2
4
6
8
10
0.8
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
14
12
10
Normalized V
GS(th)
(V)
T
j
=150
o
C
I
S
(A)
8
T
j
=25
o
C
1.2
6
0.8
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4525GEH
N-Channel
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
I
D
=6A
V
DS
=20V
8
C
iss
C (pF)
100
C
oss
C
rss
4
0
0
5
10
15
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
10
I
D
(A)
0.1
100us
0.1
0.05
P
DM
0.02
1
T
A
=25
o
C
Single Pulse
0.1
0.1
1
10
1ms
10ms
100ms
1s
DC
100
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V
G
V
DS
=5V
40
I
D
, Drain Current (A)
T
j
=25
o
C
30
T
j
=150
o
C
Q
G
4.5V
Q
GS
Q
GD
20
10
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
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