Data Sheet
ARE1-xxx0-00000
High Power Infrared Emitting Diodes
Features
Applications
Available in peak wavelengths: 850 nm and 940 nm
High radiant intensity
High radiant power
Low forward voltage
Typical viewing angles: 90° and 150°
Compatible with industrial reflow soldering process
MSL 3
Infrared illumination for cameras
Surveillance systems
Broadcom
ARE1-xxx0-DS100
October 30, 2018
ARE1-xxx0-00000
Data Sheet
High Power Infrared Emitting Diodes
Figure 1: Package Drawing
Viewing Angle 90° (ARE1-89x0, ARE1-99x0)
Viewing Angle 150° (ARE1-8Fx0, ARE1-9Fx0)
Cathode
Cathode
Anode
Anode
ESD
protection
device
ESD
protection
device
NOTE:
1. All dimensions in millimeters (mm).
2. Tolerance is ± 0.1 mm unless otherwise specified.
Broadcom
ARE1-xxx0-DS100
2
ARE1-xxx0-00000
Data Sheet
High Power Infrared Emitting Diodes
Device Selection Guide (T
J
= 25°C, I
F
= 1A)
Peak Wavelength,
peak
(nm)
850
850
850
850
850
850
940
940
940
Radiant Intensity, I
e
(mW/sr)
a,b
Min.
160
250
630
100
150
200
160
320
160
Max.
450
600
1000
350
400
500
450
850
400
Radiant Flux, Φ
e
(mW)
c
Typ.
685
800
1340
630
800
1270
590
935
970
Viewing Angle,
2θ
½
(°)
d
Typ.
90
90
90
150
150
150
90
90
150
Part Number
ARE1-89C0-00000
ARE1-89D0-00000
ARE1-8930-00000
ARE1-8FC0-00000
ARE1-8FD0-00000
ARE1-8F30-00000
ARE1-99D0-00000
ARE1-9930-00000
ARE1-9F30-00000
a. The radiant intensity, I
e
is measured at the mechanical axis of the package and it is tested with a single current pulse condition (t
p
= 10 ms).
The actual peak of the spatial radiation pattern may not be aligned with the axis.
b. Tolerance is ±15%.
c. The radiant flux,Φ
e
is the total flux output as measured with an integrating sphere at a single current pulse condition (t
p
= 10 ms).
d. θ
½
is the off-axis angle where the luminous intensity is half of the peak intensity.
Absolute Maximum Ratings
Parameters
DC Forward Current
a
Peak Forward Current
b
Power Dissipation
Reverse Voltage
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
b. Duty factor = 10%, frequency = 1kHz.
ARE1-8xC0
1000
3000
2500
115
–40 to +85
–40 to +100
ARE1-8xD0
1000
3000
2500
145
–40 to +100
–40 to +100
ARE1-8x30
1000
3000
3600
115
–40 to +85
–40 to +100
ARE1-9xD0
1000
3000
2500
115
–40 to +85
–40 to +100
ARE1-9x30
1000
3000
3400
115
–40 to +85
–40 to +100
Units
mA
mA
mW
°C
°C
°C
Not designed for reverse bias operation
a. Derate linearly as shown in
Figure 8, Figure 9, Figure 10,
and
Figure 11.
Broadcom
ARE1-xxx0-DS100
3
ARE1-xxx0-00000
Data Sheet
High Power Infrared Emitting Diodes
Optical and Electrical Characteristics (T
J
= 25°C)
Parameters
Forward Voltage, V
Fa
ARE1-8xC0
ARE1-8xD0
ARE1-8x30
ARE1-9xD0
ARE1-9x30
Reverse Voltage, V
R
Thermal Resistance, R
θJ-Sb
a. Forward voltage tolerance is ±0.1V.
b. Thermal resistance from the LED junction to the solder point.
Min.
1.4
1.4
2.7
1.4
2.5
—
Typ.
1.8
1.8
3.2
1.8
3.0
10
Max.
2.5
2.5
3.6
2.5
3.4
Units
V
Test Condition
I
F
= 1A
Not designed for reverse bias
—
°C/W
LED junction to solder point
Part Numbering System
A
R
E
1
-
x
1
x
2
x
3
0
-
0
0
0
0
0
Code
x
1
x
2
x
3
Description
Peak Wavelength
Viewing Angle
Brightness Option
8
9
9
F
C
D
3
850 nm
940 nm
90°
150°
Option
Single junction normal brightness
Single junction high brightness
Double junction high brightness
Part Number Example
ARE1-89D0-00000
x
1
: 8
x
2
: 9
x
3
: D
—
—
—
Peak wavelength 850nm
Viewing angle typical 90°
Single junction high brightness
Broadcom
ARE1-xxx0-DS100
4
ARE1-xxx0-00000
Data Sheet
High Power Infrared Emitting Diodes
Figure 2: Spectral Power Distribution
1.0
0.9
Figure 3: Forward Current vs. Forward Voltage
1000
900
FORWARD CURRENT - mA
0.8
RELATIVE INTENSITY
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
850nm
940nm
800
700
600
500
400
300
200
100
0
ARE1-8xC0
ARE1-8xD0
ARE1-9xD0
ARE1-8x30
ARE1-9x30
380 440 500 560 620 680 740 800 860 920 980 1,040
WAVELENGTH - nm
0.0
1.0
2.0
3.0
FORWARD VOLTAGE - V
4.0
5.0
Figure 4: Relative Radiant Flux vs. Mono Pulse Current
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
500
1000
1500
2000
MONO PULSE CURRENT -mA
2500
3000
t
p
= 100μs
ARE1-9x30
Figure 5: Relative Light Output vs. Junction Temperature
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
-50
ARE1-8xD0
ARE1-9xD0
ARE1-8xC0
ARE1-8x30
ARE1-8x30
ARE1-8xD0 (T
Jmax
145°C)
ARE1-9xD0 (T
Jmax
115°C)
ARE1-8xC0
ARE1-9x30
RELATIVE LIGHT OUTPUT - %
(NORMALIZED AT 25°C)
RELATIVE RADIANT FLUX
(NOMRLAIZED @1000mA)
-25
0
25
50
75
100
125
JUNCTION TEMPERATURE, T
J
- °C
150
175
Figure 6: Forward Voltage Shift vs. Junction Temperature
0.50
FORWARD VOLTAGE SHIFT - V
(NORMALIZED AT 25°C)
0.40
0.30
0.20
0.10
0.00
ARE1-9x30
ARE1-8x30
ARE1-9xD0
ARE1-8xD0
ARE1-8xC0
Figure 7: Radiation Pattern
1.0
0.9
0.8
RELATIVE INTENSITY
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
90°
150°
-0.10
-0.20
-0.30
-0.40
-50
-25
0
25
50
75
100
JUNCTION TEMPERATURE, T
J
- °C
125
150
-90
-60
-30
0
30
60
ANGULAR DISPLACEMENT - DEGREE
90
Broadcom
ARE1-xxx0-DS100
5
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