VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
I-PAK (TO-251AA)
Base
cathode
4
D-PAK (TO-252AA)
Base
cathode
4
• Optimized V
F
vs. I
R
trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
3
1
Anode
Anode
2
Cathode
2
1 Cathode 3
Anode
Anode
VS-10UT10
VS-10WT10FN
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
I-PAK (TO-251AA),
D-PAK (TO-252AA)
10 A
100 V
0.66 V
4 mA at 125 °C
175 °C
Single die
54 mJ
APPLICATIONS
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
10 Apk, T
J
= 125 °C (typical)
Range
CHARACTERISTICS
VALUES
100
0.615
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
VS-10UT10
VS-10WT10FN
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
Note
(1)
Measured connecting 2 anode pins
Revision: 02-Nov-11
Document Number: 94647
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 3 A, L = 12 mH
Limited by frequency of operation and time pulse duration
so that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
(see fig. 8)
TEST CONDITIONS
50 % duty cycle at T
C
= 159 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
(1)
VALUES
10
610
A
110
54
I
AS
at
T
J
max.
mJ
A
UNITS
A
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
5A
10 A
Forward voltage drop
V
FM (1)(2)
20 A
5A
10 A
20 A
Reverse leakage current
Junction capacitance
Series inductance
Maximum voltage rate of change
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
T
J
= 125 °C
T
J
= 25 °C
TEST CONDITIONS
TYP.
0.630
0.735
0.840
0.530
0.615
0.730
-
-
400
8.0
-
MAX.
-
0.810
0.890
-
0.660
0.770
50
4
-
-
10 000
μA
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
Notes
(1)
Pulse width < 300 μs, duty cycle < 2 %
(2)
Only 1 anode pin connected
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Case style I-PAK
Case style D-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
TEST CONDITIONS
VALUES
- 55 to 175
2
°C/W
0.3
0.3
0.01
10UT10
10WT10FN
g
oz.
UNITS
°C
Marking device
I
F
- Instantaneous Forward Current (A)
100
100
I
R
- Reverse Current (mA)
175 °C
10
150 °C
1
0.1
75 °C
0.01
0.001
0.0001
50 °C
25 °C
125 °C
100 °C
T
J
= 175 °C
10
T
J
= 125 °C
T
J
= 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Nov-11
Document Number: 94647
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
10
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
0.1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
10
Average Power Loss (W)
175
170
DC
165
160
155
150
See note (1)
145
0
2
4
6
8
10
12
14
16
I
F(AV)
Average Forward Current (A)
Square wave (D = 0.50)
80 % rated V
R
applied
8
180°
120°
90°
60°
30°
RMS limit
6
4
DC
2
0
0
3
6
9
12
15
I
F(AV)
-
Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 02-Nov-11
Document Number: 94647
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
1000
Vishay Semiconductors
100
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
100
Avalanche Current (A)
T
J
= 25 °C
10
T
J
= 125 °C
T
J
= 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Avalanche Energy (mJ)
10
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 02-Nov-11
Document Number: 94647
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
-
-
-
10
2
U
3
T
4
10
5
FN
6
TRL
7
Vishay Semiconductors product
Current rating (10 A)
Package:
U = I-PAK
W = D-PAK
4
5
6
7
-
-
-
-
T = Trench
Voltage code (100 V)
TO-252AA (D-PAK)
D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
LINKS TO RELATED DOCUMENTS
Dimensions
I-PAK (TO-251AA)
D-PAK (TO-252AA)
I-PAK (TO-251AA)
D-PAK (TO-252AA)
www.vishay.com/doc?95024
www.vishay.com/doc?95448
www.vishay.com/doc?95025
www.vishay.com/doc?95059
www.vishay.com/doc?95033
www.vishay.com/doc?95026
Part marking information
Packaging information
SPICE model
Revision: 02-Nov-11
Document Number: 94647
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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