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IDT72V815L15PF

产品描述3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18
文件大小290KB,共26页
制造商IDT(艾迪悌)
官网地址http://www.idt.com/
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IDT72V815L15PF概述

3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18

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3.3 VOLT CMOS DUAL SyncFIFO™
DUAL 256 x 18, DUAL 512 x 18,
DUAL 1,024 x 18, DUAL 2,048 x 18
and DUAL 4,096 x 18
IDT72V805
IDT72V815
IDT72V825
IDT72V835
IDT72V845
FEATURES:
The IDT72V805 is equivalent to two IDT72V205 256 x 18 FIFOs
The IDT72V815 is equivalent to two IDT72V215 512 x 18 FIFOs
The IDT72V825 is equivalent to two IDT72V225 1,024 x 18 FIFOs
The IDT72V835 is equivalent to two IDT72V235 2,048 x 18 FIFOs
The IDT72V845 is equivalent to two IDT72V245 4,096 x 18 FIFOs
Offers optimal combination of large capacity (8K), high speed,
design flexibility, and small footprint
Ideal for the following applications:
– Network switching
– Two level prioritization of parallel data
– Bidirectional data transfer
– Bus-matching between 18-bit and 36-bit data paths
– Width expansion to 36-bit per package
– Depth expansion to 8,192 words per package
10 ns read/write cycle time
5V input tolerant
IDT Standard or First Word Fall Through timing
Single or double register-buffered Empty and Full Flags
Easily expandable in depth and width
Asynchronous or coincident Read and Write Clocks
Asynchronous or synchronous programmable Almost-Empty
and Almost-Full flags with default settings
Half-Full flag capability
Output enable puts output data bus in high-impedance state
High-performance submicron CMOS technology
Available in a 128-pin thin quad flatpack (TQFP)
Industrial temperature range (–40°C to +85°C) is available
DESCRIPTION:
The IDT72V805/72V815/72V825/72V835/72V845 are dual 18-bit-wide
synchronous (clocked) First-in, First-out (FIFO) memories designed to run
off a 3.3V supply for exceptionally low power consumption. One dual
IDT72V805/72V815/72V825/72V835/72V845 device is functionally equiva-
lent to two IDT72V205/72V215/72V225/72V235/72V245 FIFOs in a single
package with all associated control, data, and flag lines assigned to
independent pins. These devices are very high-speed, low-power First-In,
First-Out (FIFO) memories with clocked read and write controls. These
FUNCTIONAL BLOCK DIAGRAM
FFA/IRA
WCLKA
WENA
HFA/(WXOA)
PAEA
EFA/
ORA
WCLKB
WENB
PAFA
DA
0
-DA
17
LDA
DB0-DB17
LDB
INPUT
REGISTER
OFFSET
REGISTER
INPUT
REGISTER
OFFSET
REGISTER
FFB/IRB
PAFB
EFB/ORB
PAEB
HFB/(WXOB)
WRITE
CONTROL
LOGIC
WRITE
POINTER
FLA
WXIA
(HFA)/WXOA
RXIA
RXOA
RSA
RAM
ARRAY
256 x 18
512 x 18
1,024 x 18
2,048 x 18
4,096 x 18
FLAG
LOGIC
WRITE
CONTROL
LOGIC
READ
POINTER
READ
CONTROL
LOGIC
WRITE
POINTER
RAM
ARRAY
256 x 18
512 x 18
1,024 x 18
2,048 x 18
4,096 x 18
FLAG
LOGIC
READ
POINTER
READ
CONTROL
LOGIC
EXPANSION
LOGIC
OUTPUT
REGISTER
EXPANSION
LOGIC
OUTPUT
REGISTER
RESET
LOGIC
RESET
LOGIC
OEA
QA
0
-QA
17
RCLKA
RENA
RSB
RXOB
RXIB
(HFB)/WXOB
WXIB
FLB
OEB
QB
0
-QB
17
RCLKB
RENB
4295 drw 01
The IDT logo is a registered trademark and the SyncFIFO is a trademark of Integrated Device Technology, Inc.
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
1
©
2001 Integrated Device Technology, Inc.
APRIL 2001
DSC-4295/1
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