NJG1108HA8
GNSS LOW NOISE AMPLIFIER
I
GENERAL DESCRIPTION
The NJG1108HA8
is a low noise amplifier GaAs MMIC designed for
GNSS (Global Navigation Satellite Systems). This amplifier provides
low noise figure, high gain and high IP3 operated by single low positive
power supply. This IC has the function of Stand-by mode. The
NJG1108HA8 can be tuned to wide frequency from 1.5GHz to 2.7GHz
by changing the external matching components.
An ultra-small and ultra-thin package of
the USB6-A8 is adopted.
I
APPLICATIONS
GNSS application, like GPS,Galileo,GLONASS and COMPASS
W-LAN and WiMAX application
Note: Please check the Application Note for WLAN and WiMAX
.
I
PACKAGE OUTLINE
NJG1108HA8
I
FEATURES
G
Operating frequency range
G
Low voltage operation
G
Low current consumption
G
High gain
G
Low noise figure
G
Input power at 1dB gain compression point
G
High input IP3
G
Ultra-small and ultra-thin package
I
PIN CONFIGURATION
(Top View)
GN
D
RFI
N
1.5~2.7GHz
+2.7V typ.
2.0mA typ.
@V
CTL
=1.85V
1uA typ.
@V
CTL
=0V
19dB typ.
@V
CTL
=1.85V, f=1.575GHz
1.0dB typ.
@V
CTL
=1.85V, f=1.575GHz
-15.0dBm typ. @V
CTL
=1.85V, f=1.575GHz
0dBm typ.
@V
CTL
=1.85V, f=1.575+1.5751GHz
USB6-A8 (Package size: 1.0x1.2x0.38mm)
3
RFOU
T
4
2
Bia
Circui
GN
D
5
Logi
Circui
VCT
L
VIN
V
1
Pin Connection
1. VINV
2. RFOUT
3. GND
4. RFIN
5. GND
6. VCTL
6
I
TRUTH TABLE
V
CTL
H
L
“H”=V
CTL(H)
, “L”=V
CTL(L)
LNA Mode
Active Mode
Sleep Mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-02
-1-
NJG1108HA8
I
ABSOLUTE MAXIMUM RATINGS
T
a
=+25°C, Z
s
=Z
l
=50ohm
PARAMETER
Drain Voltage
Inverter voltage
Control voltage
Input power
Power dissipation
Operating temperature
Storage temperature
SYMBOL
V
DD
V
INV
V
CTL
Pin
P
D
T
opr
T
stg
V
DD
=2.7V
On PCB board, Tjmax=150°C
CONDITIONS
RATINGS
5.0
5.0
5.0
+15
150
-40~+85
-55~+150
UNITS
V
V
V
dBm
mW
°C
°C
I
ELECTRICAL CHARACTERISTICS 1
GENERAL CONDITIONS: V
DD
=V
INV
=2.7V, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
PARAMETERS
Operating voltage
Inverter supply voltage
Control voltage (High)
Control voltage (Low)
Operating current1
(Active Mode, RF OFF)
Operating current2
(Sleep Mode, RF OFF)
Inverter current1
Inverter current2
Control current
SYMBOL
V
DD
V
INV
V
CTL
(H)
V
CTL
(L)
I
DD
1
I
DD
2
I
INV
1
I
INV
2
I
CTL
CONDITIONS
MIN
2.5
2.5
1.5
0
TYP
2.7
2.7
1.85
0
2.0
1
30
9
6
MAX
3.5
3.5
UNITS
V
V
V
V
mA
A
A
A
A
V
INV
+0.3
0.3
3.0
5
60
20
20
RF OFF, V
CTL
=1.85V
RF OFF, V
CTL
=0V
RF OFF, V
CTL
=1.85V
RF OFF, V
CTL
=0V
RF OFF, V
CTL
=1.85V
-
-
-
-
-
-2-
NJG1108HA8
I
ELECTRICAL CHARACTERISTICS 2
(Active Mode)
GENERAL CONDITIONS: V
DD
=V
INV
=2.7V, V
CTL
=1.85V, f
RF
=1575MHz, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
PARAMETERS
Operating Frequency
Small signal gain
Noise figure
Input power at 1dB gain
compression point
Input 3rd order
intercept point
RF IN VSWR
RF OUT VSWR
SYMBOL
freq
Gain
NF
P
-1dB(IN)
IIP3
VSWRi
VSWRo
CONDITIONS
MIN
1.57
17.0
TYP
1.575
19.0
1.0
-15.0
0
2.0
1.5
MAX
1.58
21.5
1.2
-
-
2.5
2.0
UNITS
GHz
dB
dB
dBm
dBm
Exclude PCB & connector
losses (IN: 0.05dB)
-
-19.0
f1=f
RF
, f2=f
RF
+100kHz,
Pin=-34dBm
-5.0
-
-
-3-
NJG1108HA8
ITERMINAL
INFORMATION
No.
SYMBOL
DESCRIPTION
1
VINV
Power supply pin of the inverter circuit.
RF Output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L3 is a RF choke inductor. These elements are used as
output matching circuit.
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.)
RF input pin. A DC blocking capacitor is not required. An external matching
circuit is required.
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.)
Control voltage input pin. This control pin is set to high. LNA suffers from
standby state when LNA puts the changeover voltage of "Low" in a state of
movement when the changeover voltage of "High" is put in this terminal.
2
RFOUT
3
GND
4
RFIN
5
GND
6
VCTL
CAUTION
1) Ground terminal (3, 5) should be connected to the ground plane as low inductance as possible.
-4-
NJG1108HA8
I
ELECTRICAL CHARACTERISTICS
(
Conditions: V
DD
=V
INV
=2.7V, V
CTL
=1.85V, f
RF
=1575MHz, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
)
Pout vs. Pin
10
5
0
(fRF=1575MHz)
24
22
20
Gain, I
DD
vs. Pin
(fRF=1575MHz)
8
7
Gain
6
Pout (dBm)
Gain (dB)
Pout
-5
-10
-15
-20
-25
-40
P-1dB(IN)=-15.0dBm
16
14
12
10
8
-40
P-1dB(IN)=-15.0dBm
I
DD
4
3
2
1
0
-30
-20
-10
0
10
-30
-20
-10
0
10
Pin (dBm)
Pin (dBm)
NF vs. frequency
4
(Exclude PCB, Connector Losses)
3.5
Pout, IM3 vs. Pin
20
(fRF=1575+1575.1MHz)
0
Pout
Noise Figure (dB)
Pout, IM3 (dBm)
3
2.5
2
1.5
1
-20
-40
NF
-60
IM3
-80
IIP3=+2.4dBm
0.5
0
1.5
1.55
1.6
1.65
-100
-40
-30
-20
-10
0
10
frequency (GHz)
Pin (dBm)
k factor vs. frequency
20
15
k factor
10
5
0
0
5
10
15
20
frequency (GHz)
-5-
I
DD
(mA)
18
5
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