1150MP
150 Watts, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 1025-1150 MHz. The device has gold thin-film
metallization for proven highest MTTF. The transistor includes input prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
OUT
P
IN
P
G
ηc
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10
µsec,
DF = 1%
F = 1090 MHz
MIN
140
7.0
35
TYP
150
30
7.5
38
10:1
MAX
UNITS
W
W
dB
%
250 Watts Peak
60 Volts
4.0 Volts
6.0 Amps Peak
- 65 to +150
o
C
+ 200
o
C
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
Emitter to Base Breakdown
Ie = 1 mA
BVces
Collector to Emitter Breakdown Ic = 10mA
Hfe
DC Current Gain
Vce = 5V, Ic = 500 mA
Cob
Output Capacitance
Vcb = 50 V, f = 1 MHz
2
Thermal Resistance
Tc=25ºC
θjc
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994
3.5
65
15
V
V
120
16
0.6
pF
C/W
o
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
1150MP
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
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