AON6428
30V N-Channel MOSFET
General Description
The AON6428 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
43A
< 10mΩ
< 14.5mΩ
100% UIS Tested
100% R
g
Tested
DFN5X6
Top View
Bottom View
1
2
3
4
Top View
D
8
7
6
5
G
S
PIN1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.05mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
43
27
80
11
8
45
51
30
12
2
1.3
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
21
50
3.5
Max
25
60
4.2
Units
°
C/W
°
C/W
°
C/W
Rev 6: Novl 2011
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Page 1 of 6
AON6428
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°
C
1.2
80
8.3
12.4
11.3
43
0.7
1
35
770
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
0.4
240
77
0.8
14.8
V
GS
=10V, V
DS
=15V, I
D
=20A
7.1
2.2
3.1
5
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
3
18
3
11
23
1.6
17.8
8.5
10
15
14.5
1.7
Min
30
1
5
±100
2.2
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Nov 2011
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Page 2 of 6
AON6428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
70
60
50
I
D
(A)
40
3.5V
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
16
14
V
GS
=4.5V
12
R
DS(ON)
(mΩ)
Ω
10
8
6
4
2
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
V
GS
=10V
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
V
GS
=3V
10
0
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
7V
4.5V
4V
50
40
30
20
125°C
25°C
V
DS
=5V
60
V
GS
=10V
I
D
=20A
V
GS
I
D
=20A
17
5
2
10
=4.5V
35
30
25
R
DS(ON)
(mΩ)
Ω
I
S
(A)
20
125°C
15
10
5
0
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
25°C
I
D
=20A
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
40
25°C
Rev 6: Nov 2011
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Page 3 of 6
AON6428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
1200
1000
C
iss
800
600
400
200
0
0
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
16
0
C
rss
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
oss
V
GS
(Volts)
6
8
4
2
0
1000.0
100.0
10µs
200
160
R
DS(ON)
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
10µs
Power (W)
T
J(Max)
=150°C
T
C
=25°C
100µs
1ms
DC
T
J(Max)
=150°C
T
C
=25°C
10ms
120
80
40
0
17
5
2
10
100
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
1
R
θJC
=4.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: Nov 2011
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Page 4 of 6
AON6428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
Power Dissipation (W)
T
A
=25°C
I
AR
(A) Peak Avalanche Current
80
T
A
=100°C
T
A
=150°C
40
30
60
20
40
T
A
=125°C
10
20
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure12:SinglePulseAvalanche capability(Note C)
0
0
25
50
75
100
125
150
T
CASE
(°C)
°
Figure 13: Power De-rating (Note F)
50
10000
T
A
=25°C
40
Current rating I
D
(A)
Power (W)
1000
30
100
20
17
5
2
10
10
10
0
0
50
75
100
125
T
CASE
(°C)
°
Figure 14: Current De-rating (Note F)
25
150
1
0.00001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0.001
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
0.01
Single Pulse
P
D
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 6: Nov 2011
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