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1H3-TB-LF

产品描述Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
产品类别分立半导体    二极管   
文件大小49KB,共4页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
标准
下载文档 详细参数 全文预览

1H3-TB-LF概述

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN

1H3-TB-LF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明O-PALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-PALF-W2
湿度敏感等级2
元件数量1
端子数量2
最高工作温度125 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)260
最大重复峰值反向电压200 V
最大反向恢复时间0.05 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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WTE
POWER SEMICONDUCTORS
1H1 – 1H8
Pb
1.0A ULTRAFAST DIODE
Features
!
!
!
!
!
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
!
Case: R-1, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.181 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
R-1
Dim
Min
Max
20.0
A
2.90
3.50
B
0.53
0.64
C
2.20
2.60
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1H1
1H2
1H3
1H4
1H5
1H6
1H7
1H8
Unit
50
35
100
70
200
140
300
210
1.0
400
280
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
50
20
1.0
30
1.3
5.0
100
75
15
-65 to +125
-65 to +150
1.7
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1H1 – 1H8
1 of 4
© 2006 Won-Top Electronics

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