HMC414MS8G
/
414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Typical Applications
This amplifier is ideal for use as a power
amplifier for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS
Features
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
11
LINEAR & POWER AMPLIFIERS - SMT
Functional Diagram
General Description
The HMC414MS8G & HMC414MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 2.2 and 2.8 GHz. The amplifier is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal per-
formance. With a minimum of external components,
the amplifier provides 20 dB of gain, +30 dBm of satu-
rated power at 32% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifi cations,
T
A
= +25° C, As a Function of Vs, Vpd = 3.6V
Vs = 3.6V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V / 3.6V
Vpd = 3.6V
tON, tOFF
30
21
17
Typ.
2.2 - 2.8
20
0.03
8
9
25
27
35
6.5
0.002 / 240
7
45
35
23
25
0.04
17
Max.
Min.
Typ.
2.2 - 2.8
20
0.03
8
9
27
30
39
7.0
0.002 / 300
7
45
25
0.04
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
Vs = 5V
11 - 58
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC414MS8G
/
414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Gain vs. Temperature, Vs= 3.6V
30
25
20
GAIN (dB)
15
10
5
0
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Gain vs. Temperature, Vs= 5V
30
25
20
GAIN (dB)
15
10
5
0
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
11
LINEAR & POWER AMPLIFIERS - SMT
11 - 59
Return Loss, Vs= 3.6V
0
Return Loss, Vs= 5V
0
-4
RETURN LOSS (dB)
-8
RETURN LOSS (dB)
S11
S22
-4
S11
S22
-8
-12
-12
-16
-16
-20
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
-20
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 3.6V
32
28
24
P1dB (dBm)
20
16
12
8
4
0
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
P1dB vs. Temperature, Vs= 5V
32
28
24
P1dB (dBm)
20
16
12
8
4
0
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC414MS8G
/
414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Psat vs. Temperature, Vs= 3.6V
32
28
24
Psat (dBm)
Psat vs. Temperature, Vs= 5V
32
28
24
Psat (dBm)
20
16
12
8
4
0
+25 C
+85 C
-40 C
20
16
12
8
4
+25 C
+85 C
-40 C
11
LINEAR & POWER AMPLIFIERS - SMT
0
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
Power Compression@ 2.4 GHz, Vs= 3.6V
36
Pout (dBm), GAIN (dB), PAE (%)
30
24
18
12
6
0
-14
Pout
Gain
PAE
Power Compression@ 2.4 GHz, Vs= 5V
36
Pout (dBm), GAIN (dB), PAE (%)
30
24
18
12
6
0
-14
Pout
Gain
PAE
-9
-4
1
6
11
16
-9
-4
1
6
11
16
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature, Vs= 3.6V
42
37
32
IP3 (dBm)
27
22
17
12
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Output IP3 vs. Temperature, Vs= 5V
42
37
32
IP3 (dBm)
27
22
17
12
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
11 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC414MS8G
/
414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Reverse Isolation
vs. Temperature, Vs= 3.6V
0
Power Down Isolation, Vs= 3.6V
0
-10
-10
ISOLATION (dB)
ISOLATION (dB)
-20
-30
-40
-50
-40
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
-60
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
-20
+25 C
+85 C
-40 C
-30
11
LINEAR & POWER AMPLIFIERS - SMT
Icq (mA)
Noise Figure vs. Temperature, Vs= 3.6V
15
+25 C
+85 C
-40 C
Noise Figure vs. Temperature, Vs= 5V
15
+25 C
+85 C
-40 C
12
NOISE FIGURE (dB)
12
NOISE FIGURE (dB)
2.8
3
9
9
6
6
3
3
0
2
2.2
2.4
2.6
FREQUENCY (GHz)
0
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage
28
P1dB
Psat
Gain, Power & Quiescent
Supply Current vs Vpd@ 2.4 GHz
34
GAIN (dB), P1dB (dBm), Psat (dBm)
32
400
26
30
P1dB, Psat (dBm)
28
Psat
P1dB
320
GAIN dB)
24
26
24
Icq
240
22
22
20
Gain
160
20
Gain
18
16
80
18
2.75
3.25
3.75
4.25
4.75
14
5.25
12
2
2.4
2.8
Vpd (Vdc)
3.2
0
3.6
Vcc SUPPLY VOLTAGE (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 61
HMC414MS8G
/
414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd1, Vpd2)
RF Input Power (RFIN)(Vs = +5.0,
Vpd = +3.6 Vdc)
Junction Temperature
+5.5 Vdc
+4.0 Vdc
+17 dBm
150 °C
1.755 W
37 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
LINEAR & POWER AMPLIFIERS - SMT
Continuous Pdiss (T = 85 °C)
(derate 27 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC414MS8G
HMC414MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H414
XXXX
H414
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
11 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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