1N5221C to 1N5267C
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• Standard Zener voltage tolerance is ± 2 %.
Applications
Voltage stabilization
Mechanical Data
Case:
DO-35 Glass case
Weight:
approx. 125 mg
Packaging codes/options:
TAP / 10 k per Ammopack (52 mm tape), 30 k/box
TR / 10 k per 13 " reel , 30 k/box
94 9367
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test condition
T
L
≤
75 °C
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
200
- 65 to + 200
Unit
mW
mA
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 9.5 mm (3/8 "), T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 200 mA
Symbol
V
F
Min
Typ.
Max
1.1
Unit
V
Document Number 84613
Rev. 1.0, 02-Sep-04
www.vishay.com
1
1N5221C to 1N5267C
Vishay Semiconductors
Electrical Characteristics
1N5221C...1N5267C
Partnumber
Nominal Zener
Voltage
1)
Test Current
Maximum
Dynamic
Impedance
1)
Z
ZT
@ I
ZT
Ω
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
Maximum
Dynamic
Impedance
Z
ZK
@ I
ZK
=
0.25 mA
Ω
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
Typical
Temperature of
Coeffizient
@ I
ZT
α
(%/K)
-0.085
-0.085
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
+0.055
+0.030
+0.030
+0.038
+0.038
+0.045
+0.050
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
Maximum Reverse Leakage
Current
I
R
µA
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
V
1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
@ I
ZT
, V
Z
V
1N5221C
1N5222C
1N5223C
1N5224C
1N5225C
1N5226C
1N5227C
1N5228C
1N5229C
1N5230C
1N5231C
1N5232C
1N5233C
1N5234C
1N5235C
1N5236C
1N5237C
1N5238C
1N5239C
1N5240C
1N5241C
1N5242C
1N5243C
1N5244C
1N5245C
1N5246C
1N5247C
1N5248C
1N5249C
1N5250C
1N5251C
1N5252C
1N5253C
1N5254C
1N5255C
1N5256C
1N5257C
1N5258C
1N5259C
1N5260C
1N5261C
1N5262C
1N5263C
1N5264C
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
I
ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
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2
Document Number 84613
Rev. 1.0, 02-Sep-04
1N5221C to 1N5267C
Vishay Semiconductors
Partnumber
Nominal Zener
Voltage
1)
@ I
ZT
, V
Z
V
1N5265C
1N5266C
1N5267C
1)
Test Current
Maximum
Dynamic
Impedance
1)
Z
ZT
@ I
ZT
Ω
185
230
270
Maximum
Dynamic
Impedance
Z
ZK
@ I
ZK
=
0.25 mA
Ω
1400
1600
1700
Typical
Temperature of
Coeffizient
@ I
ZT
α
(%/K)
+0.097
+0.097
+0.098
Maximum Reverse Leakage
Current
I
R
µA
0.1
0.1
0.1
V
R
V
47
52
56
I
ZT
mA
2
1.8
1.7
62
68
75
Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
R
thJA
–Therm.Resist.Junction/ Ambient ( K/W)
500
V
Ztn
– Relative
VoltageChange
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10 x 10
–4
/K
8 x 10
–4
/K
6 x 10
–4
/K
4 x 10
–4
/K
2 x 10
–4
/K
400
300
l
200
100
T
L
=constant
0
0
5
10
15
20
l – Lead Length ( mm )
l
1.1
1.0
0.9
0.8
–60
0
–2 x 10
–4
/K
–4 x 10
–4
/K
0
60
120
180
240
95 961
1
95 9599
T
j
– Junction Temperature (°C )
Figure 1. Thermal Resistance vs. Lead Length
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
P –Total Power Dissipation ( mW)
tot
1000
V
Z
–VoltageChange mV )
(
600
500
400
300
200
100
0
T
j
=25°C
100
I
Z
=5mA
10
1
0
95 9598
5
10
15
20
25
95 9602
0
40
80
120
160
200
V
Z
– Z-Voltage ( V )
T
amb
– Ambient T
emperature(°C )
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Figure 4. Total Power Dissipation vs. Ambient Temperature
Document Number 84613
Rev. 1.0, 02-Sep-04
www.vishay.com
3
1N5221C to 1N5267C
Vishay Semiconductors
TK
VZ
–Temperature Coefficient of V
Z
( 10
–4
/K)
15
100
10
I
Z
– Z-Current ( mA)
80
P
tot
=500mW
T
amb
=25°C
60
5
I
Z
=5mA
0
40
20
–5
0
10
20
30
40
50
95 9604
0
0
4
8
12
16
20
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
95 9600
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
200
C
D
– Diode Capacitance ( pF )
50
P
tot
=500mW
T
amb
=25°C
150
V
R
=2V
100
T
j
=25°C
I
Z
– Z-Current ( mA)
40
30
20
10
50
0
0
95 9601
0
5
10
15
20
25
95 9607
15
20
25
30
35
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 6. Diode Capacitance vs. Z-Voltage
Figure 9. Z-Current vs. Z-Voltage
r
Z
– Differential Z-Resistance (
Ω
)
100
I
F
– Forward Current ( mA)
1000
10
T
j
=25°C
1
I
Z
=1mA
100
5mA
10 10mA
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1
0
95 9606
T
j
=25°C
5
10
15
20
25
V
Z
– Z-Voltage ( V )
95 9605
V
F
– Forward Voltage ( V )
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Differential Z-Resistance vs. Z-Voltage
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4
Document Number 84613
Rev. 1.0, 02-Sep-04
1N5221C to 1N5267C
Vishay Semiconductors
Z
thp
–ThermalResistance PulseCond.(K/W)
for
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.02
t
p
/T=0.05
1
10
–1
10
0
10
1
t
p
– Pulse Length ( ms )
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
10
2
t
p
/T=0.01
R
thJA
=300K/W
T=T
jmax
–T
amb
95 9603
Figure 11. Thermal Response
Package Dimensions in mm (Inches)
Cathode Identification
ISO Method E
∅
0.55 (0.02) max.
94 9366
∅
2.0 (0.08) max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 (1.02) min.
3.9 (0.15) max.
26 (1.02) min.
Document Number 84613
Rev. 1.0, 02-Sep-04
www.vishay.com
5
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