PD - 9.911A
IRF9Z14S/L
HEXFET
®
Power MOSFET
Advanced Process Technology
l
Surface Mount (IRF9Z14S)
l
Low-profile through-hole (IRF9Z14L)
l
175°C Operating Temperature
l
Fast Switching
l
P- Channel
l
Fully Avalanche Rated
Description
l
D
V
DSS
= -60V
R
DS(on)
= 0.50Ω
G
S
I
D
= -6.7A
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z14L) is available for low-
profile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-6.7
-4.7
-27
3.7
43
0.29
± 20
140
-6.7
4.3
-4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
3.5
40
Units
°C/W
8/25/97
IRF9Z14S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-60
–––
–––
-2.0
1.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.06
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
63
10
31
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
=-1mA
0.50
Ω
V
GS
=-10V, I
D
= -4.0A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -25V, I
D
= -4.0A
-100
V
DS
= -60V, V
GS
= 0V
µA
-500
V
DS
= -48V, V
GS
= 0V, T
J
= 150°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
12
I
D
= -6.7A
3.8
nC V
DS
= -48V
5.1
V
GS
= -10V, See Fig. 6 and 13
–––
V
DD
= -30V
–––
I
D
= -6.7A
ns
–––
R
G
= 24Ω
–––
R
D
= 4.0Ω, See Fig. 10
Between lead,
nH
7.5 –––
and center of die contact
270 –––
V
GS
= 0V
170 –––
pF
V
DS
= -25V
31 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -6.7
showing the
A
G
integral reverse
––– ––– -27
p-n junction diode.
S
––– ––– -5.5
V
T
J
= 25°C, I
S
= -6.7A, V
GS
= 0V
––– 80 160
ns
T
J
= 25°C, I
F
= -6.7A
––– 96 190
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= -25V, starting T
J
= 25°C, L = 3.6mH
R
G
= 25Ω, I
AS
= -6.7A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRF9Z14 data and test conditions
I
SD
≤
-6.7A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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