1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
100
200
1.0
4.0
-65 to +200
175
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Max
1N/FDLL 914/A/B / 4148 / 4448
500
300
Units
mW
°C/W
2002
Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
(continued)
Electrical Characteristics
Symbol
V
R
V
F
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
1N916B
1N914B/4448
Test Conditions
I
R
= 100
µA
I
R
= 5.0
µA
I
F
= 5.0 mA
I
F
= 5.0 mA
I
F
= 10 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 100 mA
V
R
= 20 V
V
R
= 20 V, T
A
= 150°C
V
R
= 75 V
V
R
= 0, f = 1.0 MHz
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V (60mA),
I
rr
= 1.0 mA, R
L
= 100Ω
Min
100
75
620
630
Max
Units
V
V
mV
mV
V
V
V
V
nA
µA
µA
pF
pF
ns
I
R
Reverse Current
720
730
1.0
1.0
1.0
1.0
25
50
5.0
2.0
4.0
4.0
C
T
Total Capacitance
1N916A/B/4448
1N914A/B/4148
Reverse Recovery Time
t
rr
Typical Characteristics
160
Ta=25 C
o
120
T a= 25 C
o
Reverse Voltage, V
R
[V]
150
Reverse Current, I
R
[nA]
100
80
140
60
130
40
120
20
110
1
2
3
5
10
20
30
50
100
0
10
R everse V oltage, V
R
[V]
20
30
50
70
100
Reverse Current, I
R
[uA]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
550
750
Ta= 25 C
o
Ta= 25 C
o
Forward Voltage, V
R
[mV]
450
Forward Voltage, V [mV]
F
500
700
650
400
600
350
550
300
500
250
450
1
2
3
5
10
20
30
50
100
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, I
F
[uA]
Forward Current, I
F
[m A]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
(continued)
Typical Characteristics
(continued)
1.6
900
Ta= 25 C
o
Forward Voltage, V
F
[mV]
800
Typical
Ta= -40 C
o
Forward Voltage, V
F
[mV]
1.4
700
1.2
600
Ta= 25 C
o
1.0
500
Ta= +65 C
o
400
0.8
300
0.6
10
20
30
50
100
200
300
500
800
0.01
0.03
0.1
0.3
1
3
10
Forward Current, I
F
[mA]
Forward Current, I
F
[mA]
Figure 5. Forward Voltage vs Forward Current
VF - 10 to 800 mA
Figure 6. Forward Voltage
vs Ambient Temperature
VF - 0.01 - 20 mA (-40 to +65 Deg C)
4.0
0.90
Reverse Recovery Time, t
rr
[ns]
T
A
= 25 C
o
Ta = 25 C
o
3.5
Total Capacitance (pF)
0.85
3.0
2.5
0.80
2.0
1.5
0.75
0
2
4
6
8
10
12
14
1.0
10
20
30
40
50
60
REVERSE VOLTAGE (V)
Reverse Recovery Current, I
rr
[mA]
IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms
Figure 7. Total Capacitance
Figure 8. Reverse Recovery Time vs
Reverse Recovery Current
500
500
400
Power Dissipation, P [mW]
D
400
DO-35
Current (mA)
300
300
200
I
F(A
V)
- A VE
R AG
SOT-23
E RE
CT
200
IF IE D
C UR
RE N
100
T-m
A
100
0
0
50
100
o
150
0
0
50
100
150
o
200
Ambient Temperature ( C)
Temperature [ C]
Figure 9. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
Figure 10. Power Derating Curve
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
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Obsolete
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Rev. H5
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