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SV1N5619US

产品描述Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小702KB,共4页
制造商SENSITRON
官网地址http://www.sensitron.com/
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SV1N5619US概述

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

SV1N5619US规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
包装说明HERMETIC SEALED, GLASS PACKAGE-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码E-LELF-R2
JESD-609代码e0
元件数量1
端子数量2
最大输出电流1 A
封装主体材料GLASS
封装形状ELLIPTICAL
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压600 V
最大反向恢复时间0.25 µs
表面贴装YES
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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SENSITRON
___
SEMICONDUCTOR
Your Power Solutions Provider
1N5615/US thru 1N5623/US
Standard
FAST RECOVERY
RECTIFIERS
______________________________________________________________________________________
TECHNICAL DATA
A
VAILABLE AS
DATA SHEET 5081 REV. A.1
1N
JAN
JANTX
JANTXV
EQUIVALENT (SJ,SX,SV)*
JANS
SPACE EQUIVALENT SS*
Fast Recovery Rectifiers
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from wafer
fabrication through assembly and testing using our internal specification.
DESCRIPTION:
This voidless hermetically sealed standard recovery rectifier diode series is military qualified per
MIL-PRF-19500/429 and is targeted for commerical and military aircraft, military vehicles, space,
shipboard markets and all high reliability and space applications.
FEATURES / BENEFITS
Hermetic, non-cavity glass package
Category I Metallurgically bonded
JAN/ JANTX/JANTXV available per
MIL-PRF-19500/429
Tin/Lead hot solder dip ( HSD) termination
finish
MAXIMUM RATINGS
Operating and Storage Temperature: -65 C to +175 C
Solder temperature: 260 C for 10s (max)
Thermal Resistance: 38 C (junction to lead)
Thermal Resistance: 13 C (junction to endcap)
Forward surge current: 30A @ 8.3 ms half-sine
o
o
o
o
o
ELECTRICAL CHARACTERISTICS
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
MIN
BREAKDOWN
VOLTAGE
AVG
RECTIFIED
CURRENT
Amps
55 C
100 C
MAXIMUM
REVERSE
CURRENT
@ PIV
Amps
25 C
100 C
MAX. PEAK
FORWARD
VOLTAGE
(PULSED)
VF @ 3A
V
0.8 min
1.6 max
MAX.
SURGE
CURRENT
1
IFSM
Amps
MAXIMUM
REVERSE
RECOVERY
TIME
2
Trr
nsec
150
150
250
300
500
1N5615/US
1N5617/US
1N5619/US
1N5621/US
1N5623/US
Volts
200
400
600
800
1000
Volts
220
440
660
880
1100
1.0
.750
.5
25
25
Note 1: I
o
= 1A, 8ms surge
Note 2: I
F
=0.5A, I
RM
=1A, I
r(REC)
=.25A
©2010 Sensitron Semiconductor 221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com

 
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