VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Bridge (Power Modules), 45 A to 100 A
FEATURES
•
•
•
•
•
•
•
•
•
MT...PA
MT...PB
Low V
F
Low profile package
Direct mounting to heatsink
Flat pin/round pin versions with PCB solderable
terminals
Low junction to case thermal resistance
3500 V
RMS
insulation voltage
UL approved file E78996
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
•
•
Power conversion machines
Welding
UPS
SMPS
Motor drives
General purpose and heavy duty application
PRODUCT SUMMARY
I
O
V
RRM
Package
Circuit
45 A to 100 A
1400 V to 1600 V
MT...PA, MT...PB
Three phase bridge
DESCRIPTION
A range of extremely compact three-phase rectifier bridges
offering efficient and reliable operation. The low profile
package has been specifically conceived to maximize space
saving and optimize the electrical layout of the application
specific power supplies.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O
I
FSM
I
2
t
I
2
t
V
RRM
T
Stg
T
J
Range
CHARACTERISTICS
VALUES
40MT
45
T
C
50 Hz
60 Hz
50 Hz
60 Hz
100
270
280
365
325
3650
VALUES
70MT
75
80
380
398
724
660
7240
1400 to 1600
- 40 to 125
- 40 to 150
VALUES
100MT
100
80
450
470
1013
920
10 130
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-40MT140P, VS-70MT140P,
VS-100MT140P
VS-40MT160P, VS-70MT160P,
VS-100MT160P
Revision: 30-Oct-13
VOLTAGE CODE
REVERSE VOLTAGE
V
140
160
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
1400
1600
V
RSM
, MAXIMUM
I
RRM
MAXIMUM AT
NON-REPETITIVE PEAK
T
J
= 150 °C
V
mA
1500
5
1700
Document Number: 94538
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
Maximum peak, one cycle
forward, non-repetitive on state
surge current
SYMBOL
I
O
TEST CONDITIONS
120° rect. to conduction angle
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Value of threshold voltage
Slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)
r
t
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
40MT
45
100
270
280
225
Initial
T
J
= T
J
maximum
240
365
325
253
240
3650
0.78
14.8
1.45
70MT
75
80
380
398
320
335
724
660
512
467
7240
0.82
9.5
1.45
100MT
100
80
450
470
380
400
1013
920
600
665
10 130
0.75
8.1
1.51
A
2
s
V
m
V
A
2
s
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
maximum
T
J
= 25 °C; t
p
= 400 μs single junction
(40MT, I
pk
= 40 A) (70MT, I
pk
= 70 A) (100MT, I
pk
= 100 A)
INSULATION TABLE
PARAMETER
RMS insulation voltage
SYMBOL
V
INS
TEST CONDITIONS
T
J
= 25 °C, all terminal shorted, f = 50 Hz, t = 1 s
40MT
70MT
3500
100MT
UNITS
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
SYMBOL
T
J
T
Stg
DC operation per module
Maximum thermal resistance,
junction to case
R
thJC
DC operation per junction
120° rect. condunction angle per module
120° rect. condunction angle per junction
Maximum thermal resistance,
case to heatsink per module
Mounting torque to heatsink
± 10 %
Approximate weight
R
thCS
Mounting surface smooth, flat and greased
Heatsink compound thermal conductivity = 0.42 W/mK
A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound.
Lubricated threads
0.27
1.6
0.38
2.25
TEST CONDITIONS
40MT
70MT
100MT
UNITS
- 40 to 150
°C
- 40 to 125
0.23
1.38
0.29
1.76
0.1
4
65
Nm
g
0.19
1.14
0.22
1.29
K/W
CLEARANCE AND CREEPAGE DISTANCES
PARAMETER
Clearance
Creepage distance
TEST CONDITIONS
External shortest distances in air between terminals
which are not internally short circuited together
Shortest distance along external surface of the insulating material
between terminals which are not internally short circuited together
MT...PA
MT...PB
UNITS
10.9
12.3
mm
Revision: 30-Oct-13
Document Number: 94538
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
160
150
140
130
120
110
100
90
80
0
10
40MT...P
R
thJC
(DC) = 0.27 K/W
Per Module
250
200
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
150
120˚
(Rect)
100
40MT...P
Per Junction
50
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
20
30
40
50
Total Output Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
1000
Instantaneous On-state Current (A)
300
250
200
150
100
Tj = 25˚C
100
Tj = 150˚C
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
10
40MT...P
40MT...P
Per Junction
1
0
1
2
3
4
5
6
Instantaneous On-state Voltage (V)
50
0.01
0.1
Pulse Train Duration(s)
1
Fig. 2 - On-State Voltage Drop Chracteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
250
Maximum Total Power Loss (W)
40MT...P
1
0.
=
A
hS
Rt
W
K/
2
0.
200
150
100
50
0
0
Tj = 150˚C
120˚
(Rect)
0.
3
K
0.5
/W
K/
W
0.4
K/
W
1K
/W
10
20
30
40
Total Output Current (A)
50
0
30
60
90
120
150
60
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
W
K/
a
elt
-D
R
Revision: 30-Oct-13
Document Number: 94538
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
160
150
140
130
120
110
100
90
80
70
60
0
10 20 30 40 50 60 70 80
Total Output Current (A)
350
300
250
200
150
100
1
70MT...P
R
thJC
(DC) = 0.23 K/W
Per Module
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
120˚
(Rect)
70MT...P
Per Junction
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 6 - Current Rating Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
1000
Instantaneous On-state Current (A)
400
350
300
250
200
150
100
Tj = 25˚C
Tj = 150˚C
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
10
70MT...P
70MT...P
Per Junction
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
50
0.01
0.1
Pulse Train Duration(s)
1
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
300
Maximum Total Power Loss (W)
70MT...P
A
hS
Rt
250
200
150
100
50
0
0
Tj = 150˚C
120˚
(Rect)
K/
W
0.3
K/
0.4
W
K/W
0.5
K/W
1K
/W
0.
2
=
1
0.
W
K/
a
elt
-D
R
20
40
60
0
80
30
60
90
120
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)
Revision: 30-Oct-13
Document Number: 94538
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
140
100MT...P
R
thJC
(DC) = 0.19 K/W
400
350
300
250
200
150
100
1
120
100
80
60
Per Module
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
120˚
(Rect)
100MT...P
Per Junction
40
40 50 60 70 80 90 100 110 120 130
Total Output Current (A)
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Current Rating Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
1000
Instantaneous On-state Current (A)
500
450
100MT...P
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
400
Initial T j = 125˚C
No Voltage Reapplied
350
Rated V rrm Reapplied
300
250
200
150
100
50
100MT...P
Per Junction
10
Tj = 150˚C
Tj = 25˚C
1
0.5
1
1.5
2
2.5
3
3.5
4
0
0.01
0.1
1
10
Instantaneous On-state Voltage (V)
Pulse Train Duration(s)
Fig. 12 - On-State Voltage Drop Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
500
Maximum Total Power Loss (W)
100MT...P
400
300
200
100
0
0
Tj = 150˚C
Rt
hS
0.0
A =
5K
0
.0
0.1 /W
25
K/
K/
W
W
0.2
K/W
0.3
K/W
0.5
K/W
1 K/W
-D
elt
a
R
120˚
(Rect)
20
40
60
80
Total Output Current (A)
0
30
60
90
120
150
100
Maximum Allowable Ambient Temperature (°C)
Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink)
Revision: 30-Oct-13
Document Number: 94538
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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