Bulletin I25204 rev. B 09/03
110/111RIA SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
High current and high surge ratings
Hermetic glass-metal seal up to 1200V
110A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
110/111RIA
110
90
172
2080
2180
21.7
19.8
800 to 1200
110
- 40 to 140
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AC (TO-94)
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1
110/111RIA Series
Bulletin I25204 rev. B 09/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
110/111RIA
Code
80
120
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
800
1200
repetitive peak voltage
V
900
1300
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
20
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
110/111RIA
110
90
172
2080
2180
1750
1830
Units Conditions
A
°C
DC @ 83°C case temperature
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
180° conduction, half sine wave
I
2
t
Maximum I
2
t for fusing
21.7
19.8
15.3
14.0
I
2
√t
Maximum I
2
√t
for fusing
217
0.82
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
V
1.02
(I >
π
x I
T(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
1.70
1.57
150
400
V
mA
(I >
π
x I
T(AV)
),T
J
= T
J
max.
I
pk
= 350A, T
J
= T
J
max., t
p
= 10ms sine pulse
T
J
= 25°C, anode supply 6V resistive load
2.16
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
t
q
Typical delay time
Typical turn-off time
110/111RIA
300
1
Units Conditions
A/µs
Gate drive 20V, 20Ω, t
r
≤
1µs
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
µs
110
I
TM
= 50A, T
J
= T
J
max., di/dt = -5A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 25Ω
2
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110/111RIA Series
Bulletin I25204 rev. B 09/03
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
110/111RIA
500
20
Units Conditions
V/µs
mA
T
J
= T
J
max. linear to 80% rated V
DRM
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
I
GM
+V
GM
-V
GM
Maximum peak gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
TYP.
I
GT
DC gate current required
to trigger
180
80
40
V
GT
DC gate voltage required
to trigger
2.5
1.6
1
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
6.0
0.25
P
G(AV)
Maximum average gate power
110/111RIA
12
3.0
3.0
20
Units Conditions
W
A
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
V
10
MAX.
-
120
-
-
2
-
mA
V
V
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= - 40°C
T
J
= 25°C
T
J
= 140°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 140°C
T
J
= T
J
max
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. operating temperature range
Max. storage temperature range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting torque, ± 10%
110/111RIA
-40 to 140
-40 to 150
0.27
Units Conditions
°C
DC operation
K/W
0.1
15.5
(137)
14
(120)
Nm
(lbf-in)
Mounting surface, smooth, flat and greased
Non lubricated threads
Lubricated threads
wt
Approximate weight
Case style
130
g
See Outline Table
TO - 209AC (TO-94)
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3
110/111RIA Series
Bulletin I25204 rev. B 09/03
∆R
thJC
Conduction
Conduction angle
180°
120°
90°
60°
30°
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction Units
0.043
0.052
0.066
0.096
0.167
0.031
0.053
0.071
0.101
0.169
K/W
Conditions
T
J
= T
J
max.
T
J
= T
J
max.
Ordering Information Table
Device Code
11
1
1
2
3
4
-
-
-
-
1
2
RIA 120
3
4
I
T(AV)
rated average output current (rounded/10)
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
Thyristor
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
NOTE: For Metric Device M12 x 1.75 Contact Factory
4
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110/111RIA Series
Bulletin I25204 rev. B 09/03
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
8.5 (0.3) DIA.
4.3 (0.17) DIA.
37
)M
IN
(0 .
9.5
20
(0 .
79
)M
IN
.
2.5 (0.10) MAX.
FLEXIBLE LEAD
C.S. 16mm
(.025 s.i.)
RED SILICON RUBBER
157 (6.18)
170 (6.69)
RED CATHODE
WHITE GATE
C.S. 0.4 mm
(.0006 s.i.)
2
2
.
Fast-on Terminals
AMP. 280000-1
REF-250
10 (0.39)
55 (2.17) MIN.
215 (8.46)
RED SHRINK
WHITE SHRINK
24 (0.94) MAX.
10 (0.39) MAX.
23.5 (0.92) MAX. DIA.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A *
29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE: M12 X 1.75
CONTACT FACTORY
Maximum Allowable Case Temperature (°C)
140
130
120
Maximum Allowable Case Temperature (°C)
110/111RIA
111RIA Series
Series
RthJC (DC) = 0.27 K/W
140
130
120
110/111RIA Series
111RIA Series
RthJC (DC) = 0.27 K/W
Conduction Angle
Conduction Period
110
100
90
80
70
0
30
60
90
120
150
180
Average On-State Current (A)
Fig. 2 - Current Ratings
Characteristics
110
100
30˚
30˚
60˚
90˚
120˚
180˚
DC
90
80
0
20
40
60˚
90˚
120˚
180˚
60
80
100
120
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
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