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1N6844U3

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon,
产品类别分立半导体    二极管   
文件大小301KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
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1N6844U3概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon,

1N6844U3规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
应用POWER
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JESD-30 代码R-CBCC-N3
最大非重复峰值正向电流250 A
元件数量1
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流15 A
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压100 V
最大反向电流100 µA
表面贴装YES
技术SCHOTTKY
端子形式NO LEAD
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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1N6844U3
SILICON SCHOTTKY POWER RECTIFIER
40 A, 100 V
Qualified per MIL-PRF-19500/679
DESCRIPTION
This low-profile 1N6844U3 Schottky rectifier device is military qualified up to a JANTXV level
for high-reliability applications. Microsemi also offers numerous other products to meet higher
and lower power voltage regulation applications.
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Surface mount equivalent of JEDEC registered 1N6844.
Low profile ceramic SMD.
JAN, JANTX, JANTXV qualifications available per MIL-PRF-19500/679.
RoHS compliant versions available (commercial grade only).
U3 (SMD-0.5)
Package
APPLICATIONS / BENEFITS
High surge rating.
Low reverse leakage current.
Low forward voltage.
Seam welded package.
Low capacitance.
Ultrasonic aluminum wire bonds.
MAXIMUM RATINGS
@ T
C
= +25
o
C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
o
(1.6 C/W maximum)
Working Peak Reverse Voltage
Junction Capacitance
o
Average DC Output Current @ T
C
= +125 C
Non-Repetitive Sinusoidal Surge Current @ t
p
= 8.3 ms
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJC
V
RWM
C
J
Value
-65 to +150
40
2.0
100
600
15
250
Unit
C
C/W
o
C/W
o
o
I
O
I
FSM
V
pF
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0233, Rev. 1 (111958)
©2011 Microsemi Corporation
Page 1 of 5

1N6844U3相似产品对比

1N6844U3 JAN1N6844U3 P-2512E2082DBWS JANTX1N6844U3 1N6844U3E3
描述 Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon, DIODE SCHOTTKY 100V 15A U3 Fixed Resistor, Thin Film, 1W, 20800ohm, 200V, 0.5% +/-Tol, 25ppm/Cel, Surface Mount, 2512, CHIP DIODE SCHOTTKY 100V 15A U3 Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon,
Reach Compliance Code compliant compliant not_compliant compliant compliant
端子数量 3 3 2 3 3
封装形式 CHIP CARRIER CHIP CARRIER SMT CHIP CARRIER CHIP CARRIER
表面贴装 YES YES YES YES YES
技术 SCHOTTKY SCHOTTKY THIN FILM SCHOTTKY SCHOTTKY
是否Rohs认证 不符合 - 不符合 不符合 -
厂商名称 Microsemi Microsemi - Microsemi Microsemi
ECCN代码 EAR99 - EAR99 EAR99 EAR99
Is Samacsys N N - N N
应用 POWER POWER - EFFICIENCY POWER
外壳连接 CATHODE CATHODE - ISOLATED CATHODE
配置 SINGLE SINGLE - SINGLE SINGLE
二极管元件材料 SILICON SILICON - SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V - - 1 V
JESD-30 代码 R-CBCC-N3 R-CBCC-N3 - R-CBCC-N3 R-CBCC-N3
最大非重复峰值正向电流 250 A 250 A - 250 A 250 A
元件数量 1 1 - 1 1
相数 1 1 - 1 1
最高工作温度 150 °C 150 °C 155 °C - 150 °C
最低工作温度 -65 °C -65 °C -55 °C - -65 °C
最大输出电流 15 A 15 A - 15 A 15 A
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
最大重复峰值反向电压 100 V 100 V - 100 V 100 V
最大反向电流 100 µA 15000 µA - - 100 µA
端子形式 NO LEAD NO LEAD - NO LEAD NO LEAD
端子位置 BOTTOM BOTTOM - BOTTOM BOTTOM
Base Number Matches 1 1 - 1 1
其他特性 - HIGH RELIABILITY ANTI-SULFUR, FLAME PROOF, NON-INDUCTIVE HIGH RELIABILITY -

 
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