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T493C226M006AB6210

产品描述Tantalum Capacitor, Polarized, Tantalum (dry/solid), 6.3V, 20% +Tol, 20% -Tol, 22uF, Surface Mount, 2412, CHIP
产品类别无源元件    电容器   
文件大小910KB,共26页
制造商KEMET(基美)
官网地址http://www.kemet.com
标准  
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T493C226M006AB6210概述

Tantalum Capacitor, Polarized, Tantalum (dry/solid), 6.3V, 20% +Tol, 20% -Tol, 22uF, Surface Mount, 2412, CHIP

T493C226M006AB6210规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Objectid2050050253
包装说明, 2413
Reach Compliance Codecompliant
Country Of OriginMexico
ECCN代码EAR99
YTEOL6.92
其他特性ESR IS MEASURED AT 100KHZ, MIL-PRF-55365/8
电容22 µF
电容器类型TANTALUM CAPACITOR
介电材料TANTALUM (DRY/SOLID)
ESR1800 mΩ
高度2.5 mm
JESD-609代码e4
漏电流0.0014 mA
长度6 mm
安装特点SURFACE MOUNT
负容差20%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形状RECTANGULAR PACKAGE
封装形式SMT
包装方法TR, EMBOSSED PLASTIC, 7 INCH
极性POLARIZED
正容差20%
额定(直流)电压(URdc)6.3 V
尺寸代码2312
表面贴装YES
Delta切线0.06
端子面层Gold (Au)
端子形状J BEND
宽度3.2 mm

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Tantalum Surface Mount Capacitors – High Reliability
T493 High Reliability Alternative MnO
2
(CWR11 Style)
Overview
The KEMET T493 Series is designed for the Commercial
Off-The-Shelf (COTS) requirements of military and
aerospace applications. This series is a surface mount
product offering various lead-frame plating options,
Weibull grading options, surge current testing, F-Tech (an
improved anode manufacturing process) and Simulated
Breakdown Voltage (SBDV) screening options to improve
long term reliability. Standard, low, and ultra-low ESR
options are available. All lots of this series are conditioned
with MIL–PRF–55365 Group A testing. This series is also
approved for DLA Drawing 07016 (please see part number
list specific to this drawing).
KEMET’s F-Tech eliminates hidden defects in the dielectric
which continue to grow in the field, causing capacitor
failures. Based on the fundamental understanding of
degradation mechanisms in tantalum and niobium
capacitors, F-Tech incorporates multiple process
methodologies. Some minimize the oxygen and carbon
content in the anodes which become contaminants
and can lead to the crystallization of the anodic oxide
dielectric. This process methodology reduces the
contaminants, improving quality of the dielectric. An
additional technology provides a stronger mechanical
connection point between the tantalum lead wire and
tantalum anode, enhancing robustness and product
reliability. The benefit of F-Tech is illustrated by a 2,000
hour, 85°C, 1.32 X rated voltage accelerated life test.
F-Tech parts see no degradation while standard tantalum's
have 1.5 orders of magnitude degradation in leakage
current. F-Tech is currently available for the T493 Series
(select D and X case capacitance values in 25 V and
higher rated voltage). Please contact KEMET for details on
ordering other part types with these capabilities.
KEMET’s patented Simulated Breakdown Screening (SBDS)
is a nondestructive testing technique that simulates the
breakdown voltage (BDV) of a capacitor without damage to
its dielectric or to the general population of capacitors. This
screening identifies hidden defects in the dielectric, providing
the highest level of dielectric testing. SBDS is based on the
simulation of breakdown voltage (BDV), the ultimate test of
the dielectric in a capacitor.
Low BDV indicates defects in the dielectric, and therefore, a
higher probability of failure in the field. High BDV indicates
a stronger dielectric and high-reliability performance in the
field. This new screening method allows KEMET to identify
the breakdown voltage of each individual capacitor and
provide only the strongest capacitors from each lot.
SBDS is currently available on select part types in the T493
and T497 Series. Please contact KEMET for details on
ordering other part types with these capabilities.
KEMET offers these technologies per the following options:
• F-Tech only
• SBDS only
• Combination of both F-Tech and SBDS for the ultimate
protection
Built Into Tomorrow
© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • 864-963-6300 • www.kemet.com
T2007_T493 • 10/14/2021
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