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1N823AUR

产品描述Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2
产品类别分立半导体    二极管   
文件大小210KB,共2页
制造商Cobham Semiconductor Solutions
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1N823AUR概述

Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2

1N823AUR规格参数

参数名称属性值
厂商名称Cobham Semiconductor Solutions
零件包装代码DO-213AA
包装说明O-LELF-R2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-213AA
JESD-30 代码O-LELF-R2
JESD-609代码e0
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大功率耗散0.5 W
认证状态Not Qualified
标称参考电压6.2 V
表面贴装YES
技术ZENER
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
电压温度Coeff-Max0.31 mV/°C
最大电压容差4.84%
Base Number Matches1

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Temperature Compensated
Zener Reference Diode Series
1N821UR thru 1N829AUR & 1N821UR-1 thru 1N829UR-1
Features
1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 and 1N829UR-1
and A versions available in JAN, JANTX, JANTXV, JANS
Metallurgically Bonded, Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
lR = 2 μA @ 25°C & VR = 3 Vdc
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
JEDEC
TYPE
Number
(Note1)
1N821UR
1N821AUR
1N823UR
1N823AUR
1N825UR
1N825AUR
1N826UR
1N827UR
1N827AUR
1N828UR
1N829UR
1N829AUR
Normal
Zener
Voltage
Vz @ IZT
Volts
5.9—6.5
5.9—6.5
5.9—6.5
5.9—6.5
5.9—6.5
5.9—6.5
6.2—6.9
5.9—6.5
5.9—6.5
6.2—6.9
5.9—6.5
5.9—6.5
Zener
Test
Current
IZT
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
Maximum Zener
Impedance
(Note 1)
ZZT
Ohms
15
10
15
10
15
10
15
15
10
15
15
10
Voltage Temperature
Stability
3V
ZT
-55° to +100°C
(Note 2)
mV
96
96
48
48
19
19
20
9
9
10
5
5
%/°C
0.01
0.01
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
Effective
Temperature
Coefficient
NOTE 1:
NOTE 2:
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to 10% of lZT.
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV at any discrete temperature between the established limits, per JEDEC standard No. 5.
Outline Drawing
D
LEADED DESIGN DATA
CASE: DO – 213AA, Hermetically sealed glass case.
(MELF, SOD-80, LL34)
G
F
G1
LEAD FINISH: Tin / Lead
POLARITY: Cathode end is banded.
S
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion
(COE) Of this Device is Approximately +6 PPM/°C. The COE of the
Mounting Surface System Should Be Selected To Provide A Suitable
Match With This Device.
Revision Date: 2/5/2013
1

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