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1N3025CE3

产品描述Zener Diode, 16V V(Z), 2%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-1
产品类别分立半导体    二极管   
文件大小154KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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1N3025CE3概述

Zener Diode, 16V V(Z), 2%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-1

1N3025CE3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-13
包装说明O-LALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗16 Ω
JEDEC-95代码DO-41
JESD-30 代码O-LALF-W2
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
标称参考电压16 V
表面贴装NO
技术ZENER
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差2%
工作测试电流15.5 mA
Base Number Matches1

文档预览

下载PDF文档
1N3016B thru 1N3051B, e3
1 WATT METAL CASE ZENER DIODES
SCOTTSDALE DIVISION
DESCRIPTION
This well established zener diode series for the 1N3016 thru 1N3051
JEDEC registration in the metal case DO-13 package provides a glass
hermetic seal for 6.8 to 200 volts. It is also well suited for high-reliability
applications where it is available in JAN, JANTX, and JANTXV military
qualifications. Lower voltages are also available in the 1N3821 thru
1N3830 series (3.3 V to 7.5 V) in the same package (see separate data
sheet). Microsemi also offers numerous other Zener diode products for a
variety of other packages including surface mount.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Zener Voltage Range: 6.8V to 200V
Hermetically sealed DO-13 metal package
Internally solder-bonded construction.
Also available in JAN, JANTX, JANTXV qualifications
per MIL-PRF19500/115 by adding the JAN, JANTX,
or JANTXV prefixes to part numbers for desired level
of screening, e.g. JANTX1N3016B,
JANTXV1N3051B, etc.
Surface mount also available with 1N3016BUR-1 thru
1N3051BUR-1 series on separate data sheet
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Wide selection from 6.8 to 200 V
Tight voltage tolerances available
Low reverse (leakage) currents
Nonsensitive to ESD
Hermetically sealed metal package
Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
Operating Junction and Storage Temperatures:
-65
o
C to +175
o
C
THERMAL RESISTANCE: 50
o
C/W* junction to lead
at 0.375 inches (10 mm) from body or 110
o
C/W
junction to ambient when leads are mounted on FR4
2
PC board with 4 mm copper pads (1 oz) and track
width 1 mm, length 25 mm
DC Power Dissipation
*
: 1.0 Watt at T
L
< +125
o
C 3/8”
(10 mm) from body or 1.0 Watts at T
L
< +65
o
C when
mounted on FR4 PC board as described for thermal
resistance above (also see Fig 1)
Forward Voltage @ 200 mA: 1.5 Volts.
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external surfaces are Tin-Lead (Pb/Sn)
or RoHS Compliant annealed matte-Tin (Sn) plating
and solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected case.
WEIGHT: 1.4 grams.
Tape & Reel option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimensions on last page
1N3016B – 1N3051B, e3
*
For further mounting reference options, thermal resistance from junction to metal case is
<
20
o
C/W
when mounting DO-13 metal case directly on heat sink.
Copyright
©
2006
3-12-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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