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1N6373 − 1N6381 Series
(ICTE−5 − ICTE−36,
MPTE−5 − MPTE−45)
1500 Watt Peak Power
Mosorbt Zener Transient
Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features
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Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
MARKING DIAGRAMS
A
MPTE
−xx
1N
63xx
YYWWG
G
A
ICTE
−xx
YYWWG
G
A
= Assembly Location
MPTE−xx = ON Device Code
1N63xx = JEDEC Device Code
ICTE−xx = ON Device Code
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
•
•
•
•
•
•
•
Working Peak Reverse Voltage Range − 5.0 V to 45 V
Peak Power − 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
Response Time is Typically < 1 ns
Pb−Free Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
ORDERING INFORMATION
Device
MPTE−xx, G
MPTE−xxRL4, G
ICTE−xx, G
ICTE−xxRL4, G
1N63xx, G
Package
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Shipping
†
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1N63xxRL4, G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 4
Publication Order Number:
1N6373/D
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1)
@ T
L
≤
25°C
Steady State Power Dissipation @ T
L
≤
75°C, Lead Length = 3/8″
Derated above T
L
= 75°C
Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2)
@ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
I
FSM
T
J
, T
stg
Value
1500
5.0
20
20
200
− 65 to +175
Unit
W
W
mW/°C
°C/W
A
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 – 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Variation of V
BR
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
Uni−Directional TVS
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2
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
JEDEC
Device
†
(ON Device)
1N6373, G
(MPTE−5, G)
1N6374, G
(MPTE−8, G)
1N6375, G
(MPTE−10,G)
1N6376, G
(MPTE−12, G)
1N6377, G
(MPTE−15, G)
1N6379, G
(MPTE−22, G)
1N6380, G
(MPTE−36, G)
1N6381, G
(MPTE−45, G)
ICTE−5, G
ICTE−10, G
ICTE−12, G
V
RWM
(Note 4)
(Volts)
5.0
8.0
10
12
15
22
36
45
5.0
10
12
I
R
@
V
RWM
(mA)
300
25
2.0
2.0
2.0
2.0
2.0
2.0
300
2.0
2.0
Breakdown Voltage
V
BR
(Note 5
)
(Volts)
Min
6.0
9.4
11.7
14.1
17.6
25.9
42.4
52.9
6.0
11.7
14.1
Nom
−
−
−
−
−
−
−
−
−
−
−
Max
−
−
−
−
−
−
−
−
−
−
−
@ I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
C
@ I
PP
(Note 6)
V
C
(Volts)
9.4
15
16.7
21.2
25
37.5
65.2
78.9
9.4
16.7
21.2
I
PP
(A)
160
100
90
70
60
40
23
19
160
90
70
V
C
(Volts)
(Note 6)
@ I
PP
=
1A
7.1
11.3
13.7
16.1
20.1
29.8
50.6
63.3
7.1
13.7
16.1
@ I
PP
=
10 A
7.5
11.5
14.1
16.5
20.6
32
54.3
70
7.5
14.1
16.5
QV
BR
(mV/°C)
4.0
8.0
12
14
18
26
50
60
4.0
8.0
12
Device
Marking
1N6373
MPTE−5
1N6374
MPTE−8
1N6375
MPTE−10
1N6376
MPTE−12
1N6377
MPTE−15
1N6379
MPTE−22
1N6380
MPTE−36
1N6381
MPTE−45
ICTE−5
ICTE−10
ICTE−12
ICTE−15, G
ICTE−15
15
2.0
17.6
−
−
1.0
25
60
20.1
20.6
14
ICTE−18, G
ICTE−18
18
2.0
21.2
−
−
1.0
30
50
24.2
25.2
18
ICTE−22, G
ICTE−22
22
2.0
25.9
−
−
1.0
37.5
40
29.8
32
21
ICTE−36, G
ICTE−36
36
2.0
42.4
−
−
1.0
65.2
23
50.6
54.3
26
3. Square waveform, PW = 8.3 ms, non−repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C and minimum voltage in V
BR
is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
†The “G’’ suffix indicates Pb−Free package available.
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3
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25
°
C
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
10
1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
10,000
MEASURED @
ZERO BIAS
C, CAPACITANCE (pF)
1000
MEASURED @ V
RWM
100
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8″
5
4
3
2
1
0
0
25
50
75
100 125 150 175
T
L
, LEAD TEMPERATURE (°C)
200
0
0
IPP, VALUE (%)
3/8″
100
t
r
≤
10
ms
PEAK VALUE − I
PP
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
HALF VALUE −
50
t
P
I
PP
2
1
2
t, TIME (ms)
3
4
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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4
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