Radiation Hardened 36V Quad Precision Low Power
Operational Amplifier With Enhanced SET Performance
ISL70419SEH
The ISL70419SEH contains four very high precision amplifiers
featuring the perfect combination of low noise vs power
consumption. Low offset voltage, low I
BIAS
current and low
temperature drift making them the ideal choice for applications
requiring both high DC accuracy and AC performance. The
combination of high precision, low noise, low power and small
footprint provides the user with outstanding value and flexibility
relative to similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70419SEH is offered in a 14 Ld hermetic ceramic
flatpack package. The device is offered in an industry standard
pin configuration and operates over the extended temperature
range from -55°C to +125°C.
Features
• Electrically screened to DLA SMD#
5962-14226
• Low input offset voltage. . . . . . . . . . . . . . . . . . . ±110µV, Max.
• Superb offset temperature coefficient. . . . . . . 1µV/°C, Max.
• Input bias current . . . . . . . . . . . . . . . . . . . . . . . . . ±15nA, Max.
• Input bias current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- SEL/SEB LET
TH
(V
S
= ±36V). . . . . . . . . 86.4 MeV•cm
2
/mg
- SET recovery time . . . . . . . . . . < 10µs @ 60 MeV•cm
2
/mg
- Total dose HDR (50-300rad(Si)/s) . . . . . . . . . . 300krad(Si)
- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
Applications
• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks
• Thermocouples and RTD reference buffers
• Data acquisition
• Power supply control
Related Literature
AN1936,
ISL70419SEHEV1Z Evaluation Board User’s Guide
10
9
C
1
SET DURATION (µs)
8.2nF
CH2 = V
OUT
- B
V
S
= ±15V
8
7
6
5
4
3
2
V
-
1
0
-8
-6
V
+
-
ISL70419SEH
V
IN
R
1
1.84k
R
2
4.93k
3.3nF
OUTPUT
+
C
2
SALLEN-KEY LOW PASS FILTER (f
C
= 10kHz)
-4
-2
0
SET EXTREME DEVIATION(V)
2
4
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. SET DEVIATION vs DURATION FOR LET = 60 MeV•cm
2
/mg
June 24, 2014
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1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL70419SEH
Ordering Information
ORDERING/SMD
NUMBER
5962F1422601VXC
ISL70419SEHF/PROTO
5962F1422601V9AX
ISL70419SEHX/SAMPLE
ISL70419SEHEV1Z
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table must be used when ordering.
PART NUMBER
(Notes
1, 2)
ISL70419SEHVF
ISL70419SEHF/PROTO
ISL70419SEHVX
ISL70419SEHX/SAMPLE
Evaluation Board
TEMPERATURE RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(Rohs Compliant
14 Ld Flatpack with EPAD
14 Ld Flatpack with EPAD
DIE
DIE
K14.C
K14.C
PKG.
DWG. #
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ISL70419SEH
Pin Configuration
ISL70419SEH
(14 LD FLATPACK)
TOP VIEW
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
1
2
3
4
5
6
7
- +
B
+ -
C
A
- +
D
+ -
14
13
12
11
10
9
8
OUT_D
-IN_D
+IN_D
V-
+IN_C
-IN_C
OUT_C
Pin Descriptions
PIN NUMBER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PIN NAME
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
OUT_C
-IN_C
+IN_C
V-
+IN_D
-IN_D
OUT_D
EPAD
V+
500Ω
IN-
500Ω
IN+
V+
OUT
V-
CIRCUIT 2
V-
EQUIVALENT CIRCUIT
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
N/A
Amplifier A output
DESCRIPTION
Amplifier A inverting input
Amplifier A non-inverting input
Positive power supply
Amplifier B non-inverting input
Amplifier B inverting input
Amplifier B output
Amplifier C output
Amplifier C inverting input
Amplifier C non-inverting input
Negative power supply
Amplifier D non-inverting input
Amplifier D inverting input
Amplifier D output
EPAD under Package (Unbiased, tied to package lid)
V+
CAPACITIVELY
COUPLED
ESD CLAMP
CIRCUIT 3
V-
CIRCUIT 1
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ISL70419SEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (LET = 86.4 MeV
•
cm
2
/mg). . . . . . . . . . . . . 36V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V
Max/Min Input current for Input Voltage >V+ or <V-. . . . . . . . . . . . . . . . ±20mA
Output Short-Circuit Duration (1 output at a time). . . . . . . . . . . . . . . . Indefinite
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per EIA/JESD22-A115-A) . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA
(°C/W)
JC
(°C/W)
14 Ld Flatpack (Notes
3, 4).
. . . . . . . . . . . .
35
8
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (T
JMAX
) . . . . . . . . . . . . . . . . . . . . .+150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see
TB493
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V (±5V) to 30V (±15V)
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief
TB379.
4. For
JC
, the "case temp" location is the center of the package underside.
Electrical Specifications
V
S
± 15V, V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply across the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s; or across a total
ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
V
OS
DESCRIPTION
Input Offset Voltage
TEST CONDITIONS
MIN
(Note
5)
TYP
10
MAX
(Note
5)
85
110
TCV
OS
I
B
Offset Voltage Drift
Input Bias Current
T
A
= -55°C to +125°C
over high and low dose radiation
TCI
B
I
OS
Input Bias Current Temperature
Coefficient
Input Offset Current
T
A
= -55°C to +125°C
over high and low dose radiation
TCI
OS
V
CM
CMRR
Input Offset Current Temperature
Coefficient
Input Voltage Range
Common-Mode Rejection Ratio
guaranteed by characterization not tested
guaranteed by CMRR test
V
CM
= -13V to +13V
guaranteed by characterization not tested
guaranteed by characterization not tested
-2.5
-5
-15
-5
-2.5
-3
-10
-3
-13
120
120
PSRR
Power Supply Rejection Ratio
V
S
= ±2.25V to ±20V
120
120
A
VOL
V
OH
Open-Loop Gain
Output Voltage High
V
O
= -13V to +13V, R
L
= 10k to ground
R
L
= 10k to ground
3,000
13.5
13.2
R
L
= 2k to ground
13.3
13.0
13.55
14,000
13.7
145
145
0.42
1
0.08
0.1
0.08
1
2.5
5
15
5
2.5
3
10
3
13
UNITS
µV
µV
µV/
°
C
nA
nA
nA
pA/°C
nA
nA
nA
pA/°C
V
dB
dB
dB
dB
V/mV
V
V
V
V
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ISL70419SEH
Electrical Specifications
V
S
± 15V, V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply across the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s; or across a total
ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)
PARAMETER
V
OL
DESCRIPTION
Output Voltage Low
TEST CONDITIONS
R
L
= 10k to ground
MIN
(Note
5)
TYP
-13.7
MAX
(Note
5)
-13.5
-13.2
R
L
= 2k to ground
-13.55
-13.3
-13.0
I
S
Supply Current/Amplifier
0.44
0.625
0.75
I
SC
V
SUPPLY
Short-Circuit Current
Supply Voltage Range
guaranteed by PSRR
± 2.25
43
± 20
UNITS
V
V
V
V
mA
mA
mA
V
AC SPECIFICATIONS
GBWP
e
nVp-p
e
n
e
n
e
n
e
n
in
THD + N
Gain Bandwidth Product
Voltage Noise V
P-P
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
Total Harmonic Distortion
A
V
= 1k, R
L
= 2k
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 1kHz
1kHz, G = 1, V
O
= 3.5V
RMS
, R
L
= 2k
1kHz, G = 1, V
O
= 3.5V
RMS
, R
L
= 10k
TRANSIENT RESPONSE
SR
Slew Rate, V
OUT
20% to 80%
A
V
= 11, R
L
= 2kV
O
= 4V
P-P
0.3
0.2
t
r
, t
f
,
Small Signal
Rise Time
10% to 90% of V
OUT
Fall Time
90% to 10% of V
OUT
t
s
Settling Time to 0.1%
10V Step; 10% to V
OUT
Settling Time to 0.01%
10V Step; 10% to V
OUT
Settling Time to 0.1%
4V Step; 10% to V
OUT
Settling Time to 0.01%
4V Step; 10% to V
OUT
t
OL
Output Positive Overload Recovery Time
A
V
= 1, V
OUT
= 50mV
P-P
,
R
L
= 10kto V
CM
A
V
= 1, V
OUT
= 50mV
P-P
, R
L
= 10kto V
CM
130
450
625
130
600
700
A
V
= -1, V
OUT
= 10V
P-P
, R
L
= 5kto V
CM
A
V
= -1, V
OUT
= 10V
P-P
, R
L
= 5kto V
CM
A
V
= -1, V
OUT
= 4V
P-P
, R
L
= 5kto V
CM
A
V
= -1, V
OUT
= 4V
P-P
, R
L
= 5kto V
CM
A
V
= -100, V
IN
= 0.2V
P-P,
R
L
= 2kto V
CM
21
24
13
18
5.6
10.6
15
33
15
33
0.5
V/µs
V/µs
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
%
%
%
%
1.5
0.25
10
8.2
8
8
0.1
0.0009
0.0005
MHz
µV
P-P
nV/Hz
nV/Hz
nV/Hz
nV/Hz
pA/Hz
%
%
Output Negative Overload Recovery Time A
V
= -100, V
IN
= 0.2V
P-P,
R
L
= 2kto V
CM
OS+
Positive Overshoot
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0
R
L
= 2kto V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0
R
L
= 2kto V
CM
OS-
Negative Overshoot
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