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1N6275ATR

产品描述Trans Voltage Suppressor Diode, 1500W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, CASE 1, 2 PIN
产品类别分立半导体    二极管   
文件大小381KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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1N6275ATR概述

Trans Voltage Suppressor Diode, 1500W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, CASE 1, 2 PIN

1N6275ATR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
包装说明O-PALF-W2
针数2
制造商包装代码CASE 1
Reach Compliance Codecompli
ECCN代码EAR99
其他特性HIGH RELIABILITY
最大击穿电压15.8 V
最小击穿电压14.3 V
击穿电压标称值15 V
外壳连接ISOLATED
最大钳位电压21.2 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e0
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1.52 W
认证状态Not Qualified
最大重复峰值反向电压12.8 V
表面贴装NO
技术AVALANCHE
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Unidirectional and Bidirectional
Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 5.8 V to 324 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
M1.5KE6.8A thru M1.5KE400CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 1500 watts @ 10/1000 µs
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote
129
for more details on the screening options.
Surface mount equivalent packages are available as MSMC(G)(J)5.0A - SMC(G)(J)170CA
(consult factory for other surface mount options)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current I
D
CASE 1
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4 with fast response
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1: M1.5KE6.8A to M1.5KE200CA
o
Class 2: M1.5KE5.0A to M1.5KE180CA
o
Class 3: M1.5KE5.0A to M1.5KE91CA
o
Class 4: M1.5KE5.0A to M1.5KE43CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1 : M1.5KE5.0A to M1.5KE110CA
o
Class 2: M1.5KE5.0A to M1.5KE56CA
o
Class 3: M1.5KE5.0A to M1.5KE27ACA
o
Class 4: M1.5KE5.0A to M1.5KE13CA
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
o
Class 2: M1.5KE5.0A to M1.5KE24CA
o
Class 3: M1.5KE5.0A to M1.5KE12CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 1500 watts at 10/1000 μs (also see Figures 1, 2, and 3) with
impulse repetition rate (duty factor) of 0.01 % or less
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
º
C to +150
º
C
Thermal Resistance: 22
º
C/W junction to lead at 3/8 inch (10 mm) from body, or 82
º
C/W junction to
ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1oz) and track width 1 mm, length 25
mm
Steady-State Power dissipation: 5 watts at T
L
= 40
º
C, or 1.52 watts at T
A
= 25
º
C when mounted on FR4
PC board described for thermal resistance
Forward Surge: 200 Amps peak impulse of 8.3 ms half-sine wave at 25ºC (unidirectional only).
Solder temperatures: 260
º
C for 10 s (maximum)
RF01008 Rev C, September 2010
High Reliability Product Group
Page 1 of 4
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