Bulletin PD-2.288 rev. F 11/04
11DQ05
11DQ06
SCHOTTKY RECTIFIER
1.1 Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 1 Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The 11DQ.. axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage.
Typical applications are in switching power supplies, convert-
ers, free-wheeling diodes, and reverse battery protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free plating
Values
1.1
50/60
150
0.53
- 40 to 150
CASE STYLE AND DIMENSIONS
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
www.irf.com
1
11DQ05, 11DQ06
Bulletin PD-2.288 rev. F 11/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
11DQ05
50
11DQ06
60
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 4
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
150
25
2.0
1.0
A
mJ
A
5µs Sine or 3µs Rect. pulse
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated V
RRM
applied
11DQ..
1.1
Units
A
Conditions
50% duty cycle @ T
C
= 84°C, rectangular wave form
T
J
= 25 °C, I
AS
= 1 Amps, L = 4 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
11DQ.. Units Conditions
0.58
0.76
0.53
0.64
1.0
11
55
8.0
10000
V
V
V
V
mA
mA
pF
nH
V/µs
@ 1A
@ 2A
@ 1A
@ 2A
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
V
R
= rated V
R
T
J
= 25 °C
T
J
= 125 °C
I
RM
C
T
L
S
Max. Reverse Leakage Current
* See Fig. 2
Typical Series Inductance
(1)
Typical Junction Capacitance
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
11DQ.. Units Conditions
-40 to 150
-40 to 150
100
81
°C
°C
°C/W DC operation
Without cooling fin
°C/W DC operation (See Fig. 4)
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thJL
Typical Thermal Resistance Junction
to Lead
wt
Approximate Weight
Case Style
(*) dPtot
dTj
<
1
Rth( j-a)
0.33(0.012) g (oz.)
DO-204AL(DO-41)
thermal runaway condition for a diode on its own heatsink
2
www.irf.com
11DQ05, 11DQ06
Bulletin PD-2.288 rev. F 11/04
100
Reverse Current - I
R
(mA)
10
1
0.1
0.01
0.001
T
J
= 150˚C
10
125˚C
25˚C
Instantaneous Forward Current - I
F
(A)
0.0001
0
10
20 30 40 50 60
Reverse Voltage - V
R
(V)
70
T
J
= 150˚C
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1
T
J
= 125˚C
T
J
= 25˚C
100
Junction Capacitance - C
T
(pF)
T
J
= 25˚C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0
10
20
30
40
50
60
70
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
www.irf.com
3
11DQ05, 11DQ06
Bulletin PD-2.288 rev. F 11/04
160
Allowable Case Temperature (°C)
Average Power Loss (Watts)
0.8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
140
120
100
80
60
Square wave (D = 0.50)
80% Rated Vr applied
DC
0.6
0.4
40
20
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Average Forward Current - I
F(AV)
(A)
0.2
see note (2)
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 4 - Maximum Ambient Temperature Vs. Average Forward
Current, Printed Circuit Board Mounted
1000
Non-Repetitive Surge Current-I
FSM
(A)
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
100
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Maximum Non-Repetitive Surge Current
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
www.irf.com
11DQ05, 11DQ06
Bulletin PD-2.288 rev. F 11/04
Ordering Information Table
Device Code
11
1
D
2
Q
3
06
4
TR
5
1
2
3
4
5
-
-
-
-
-
11 = 1.1A (Axial and small packages - Current is x10)
D = DO-41 package
Q = Schottky Q.. Series
10 = Voltage Ratings
TR = Tape & Reel package ( 5000 pcs)
-
= Box package (1000 pcs)
06 = 60V
05 = 50V
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/04
www.irf.com
5
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
