VS-10ETF12THM3
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
2
Base
cathode
2
• Glass passivated pellet chip junction
• Meets JESD 201 class 1A whisker test
• Flexible solution for reliable AC power
rectification
1
3
1
Cathode
3
Anode
• High surge, low V
F
rugged blocking diode
for DC charging stations
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2L TO-220AC
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Snap factor
Package
Circuit configuration
10 A
1200 V
1.33 V
140 A
80 ns
150 °C
0.6
2L TO-220AC
Single
APPLICATIONS
• On-board and off-board EV/HEV battery chargers
• Input rectification
DESCRIPTION
The VS-10ETF12THM3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/μs
10 A, T
J
= 25 °C
Sinusoidal waveform
CHARACTERISTICS
VALUES
1200
10
140
80
1.33
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF12THM3
V
RRM
, MAXIMUM PEAK REVERSE
VOLTAGE
V
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1300
I
RRM
AT 150 °C
mA
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 125 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
10
115
140
66
94
940
A
2
s
A
2
s
A
UNITS
Revision: 06-Jul-2018
Document Number: 96540
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF12THM3
www.vishay.com
Vishay Semiconductors
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
10 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.33
22.9
0.96
0.1
4
UNITS
V
m
V
mA
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Typical snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 10 A
pk
25 A/μs
25 °C
VALUES
310
4.7
1.05
0.6
UNITS
ns
A
μC
dir
dt
Q
rr
I
RM(REC)
I
FM
t
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance
junction to case
Maximum thermal resistance
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style 2L TO-220AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
1.5
62
0.5
2
0.07
6 (5)
12 (10)
10ETF12TH
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Revision: 06-Jul-2018
Document Number: 96540
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF12THM3
www.vishay.com
Vishay Semiconductors
24
DC
180°
120°
90°
60°
30°
150
Maximum Allowable Case
Temperature (°C)
145
140
Maximum Average Forward
Power Loss (W)
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
20
16
12
Ø
135
130
125
120
115
0
2
4
6
Conduction angle
30°
RMS limit
8
Ø
60°
90°
120°
180°
8
10
12
Conduction period
4
0
0
2
4
6
8
10ETF.. Series
T
J
= 150 °C
10
12
14
16
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
130
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
120
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
145
140
Peak Half Sine Wave
Forward Current (A)
110
100
90
80
70
60
50
40
30
Ø
135
130
125
120
115
0
2
4
6
8
Conduction period
30°
60°
90°
120°
180°
10
12
DC
14
16
VS-10ETF..
Series
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
140
180°
120°
90°
60°
30°
RMS limit
120
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
Maximum Average Forward
Power Loss (W)
14
12
10
8
6
4
2
0
0
2
Peak Half Sine Wave
Forward Current (A)
100
80
60
40
20
0
0.01
Ø
Conduction angle
10ETF.. Series
T
J
= 150 °C
4
6
8
10
VS-10ETF..
Series
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 06-Jul-2018
Document Number: 96540
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF12THM3
www.vishay.com
Vishay Semiconductors
2.0
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
Instantaneous Forward Current (A)
1000
T
J
= 150 °C
T
J
= 25 °C
100
Q
rr
- Typical Reverse
Recovery Charge (µC)
1.6
I
FM
= 8 A
1.2
I
FM
= 5 A
0.8
I
FM
= 2 A
0.4
I
FM
= 1 A
10
10ETF.. Series
1
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.6
0.5
10ETF.. Series
T
J
= 25 °C
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 8 A
I
FM
= 10 A
5
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
0.4
0.3
0.2
0.1
0
0
40
80
120
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
4
3
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
2
1
0
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.8
10ETF.. Series
T
J
= 150 °C
0.6
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 8 A
I
FM
= 10 A
20
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
12
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
4
0.4
I
rr
- Typical Reverse
Recovery Current (A)
200
t
rr
- Typical Reverse
Recovery Time (µs)
16
8
0.2
0
0
40
80
120
160
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 06-Jul-2018
Document Number: 96540
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF12THM3
www.vishay.com
Vishay Semiconductors
25
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
I
rr
- Typical Reverse
Recovery Current (A)
20
I
FM
= 8 A
15
I
FM
= 5 A
I
FM
= 2 A
10
I
FM
= 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
10
Steady state value
(DC operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
Single pulse
10ETF.. Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 06-Jul-2018
Document Number: 96540
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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