1N4728A to 1N4749A
Voltage regulator diodes
Rev. 02 — 30 October 2009
Product data sheet
1. Product profile
1.1 General description
Low voltage regulator diodes in hermetically sealed small SOD66 (DO-41) glass
packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
1.2 Features
I
Total power dissipation:
max.
≤
1000 mW
I
Working voltage range:
nom. 3.3 V to 24 V
I
Tolerance series:
±5
%
I
Small hermetically sealed glass
package
1.3 Applications
I
Low voltage stabilizers
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 200 mA
Min
-
-
Typ
-
-
Max
1.2
1000
Unit
V
mW
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
k
a
Graphic symbol
1
2
006aaa152
[1]
The marking band indicates the cathode.
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
3. Ordering information
Table 3.
Ordering information
Package
Name
1N4728A to
1N4749A
[1]
[1]
Type number
Description
hermetically sealed glass package; axial leaded;
2 leads
Version
SOD66
-
The series consists of 22 types with nominal working voltages from 3.3 V to 24 V.
4. Marking
Table 4.
Marking codes
Marking code
The diodes are type branded.
Type number
1N4728A to 1N4749A
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
Z
I
ZSM
P
tot
T
j
T
stg
Parameter
forward current
working current
non-repetitive peak reverse
current
total power dissipation
junction temperature
storage temperature
T
amb
= 50
°C
Conditions
Min
-
-
-
-
−65
−65
Max
500
see
Table 8
see
Table 8
1000
+200
+200
mW
°C
°C
Unit
mA
1N4728A_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 October 2009
2 of 10
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
6. Thermal characteristics
Table 6.
Symbol
R
th(j-t)
Thermal characteristics
Parameter
thermal resistance from
junction to tie-point
Conditions
lead length 4 mm
Min
-
Typ
-
Max
110
Unit
K/W
10
3
R
th(j-t)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
10
0.10
0.05
006aab843
0.02
0.01
0
1
10
−1
1
10
10
2
10
3
10
4
t
p
(ms)
10
5
Fig 1.
Thermal resistance from junction to tie-point as a function of pulse duration;
lead length 4 mm
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 200 mA
Min
-
Typ
-
Max
1.2
Unit
V
1N4728A_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 October 2009
3 of 10
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
Table 8.
Characteristics per type
T
j
= 25
°
C unless otherwise specified.
Type
number
Working
voltage
V
Z
(V)
[1]
at I
test
Nom
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
[1]
[2]
Test
current
I
test
(mA)
Differential
resistance
r
dif
(Ω)
at I
test
Max
10
10
9
9
8
7
5
2
3.5
4
4.5
5
7
8
9
10
14
16
20
22
23
25
at I
Z
Max
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
Z
(mA)
Reverse current
I
R
(µA)
Working
current
I
Z
(mA)
Non-repetitive
peak reverse
current
I
ZSM
(mA)
[2]
Max
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
V
R
(V)
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
Max
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
Max
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°C.
Half square wave or equivalent sine wave pulse 1/120 second duration superimposed on I
test
.
1N4728A_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 October 2009
4 of 10
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
300
I
F
(mA)
200
mbg925
(1)
(2)
100
0
0
0.5
V
F
(V)
1.0
(1) T
j
= 200
°C
(2) T
j
= 25
°C
Fig 2.
Forward current as a function of forward voltage; typical values
1N4728A_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 October 2009
5 of 10
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