VISHAY
1N4148WS
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• These diodes are also available in other case
styles including the DO-35 case with the type des-
ignation 1N4148, the MiniMELF case with the type
designation LL4148, and the SOT-23 case with
the type designation IMBD4148.
• Silicon Epitaxial Planar Diode
• Fast switching diodes
17431
Mechanical Data
Case:
SOD-323 Plastic case
Weight:
approx. 5.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4148WS
Ordering code
1N4148WS-GS18 or 1N4148WS-GS08
A2
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge forward current
Power dissipation
1)
Test condition
Symbol
V
R
V
RM
Value
75
100
150
1)
Unit
V
V
mA
f
≥
50 Hz
I
F(AV)
t < 1 s and T
j
= 25 °C
I
FSM
P
tot
350
200
1)
mA
mW
Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambien air
Junction temperature
Storage temperature
1)
Test condition
Symbol
R
thJA
T
j
T
S
Value
650
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that electrodes are kept at ambient temperature.
Document Number 85751
Rev. 1.3, 08-Jul-04
www.vishay.com
1
1N4148WS
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Test condition
I
F
= 10 mA
V
R
= 20 V
V
R
= 75 V
V
R
= 20 V, T
J
= 150 °C
Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)
Reverse recovery time
Rectification efficiency
V
F
= V
R
= 0 V
tested with 50 mA pulses,
t
p
= 0.1
µs,
rise time < 30 ns,
f
p
= (5 to 100) kHz
I
F
= 10 mA, I
R
= 1 mA, V
R
= 6 V,
R
L
= 100
Ω
f = 100 MHz, V
RF
= 2 V
C
tot
V
fr
Symbol
V
F
Min
Typ.
Max
1.0
25
5.0
50
4
2.5
VISHAY
Unit
V
nA
µA
µA
pF
ns
t
rr
η
½
0.45
4
ns
Rectification Efficiency Measurement
Circuit
60
Ω
V
RF
= 2 V
2 nF
5 kΩ
V
O
17436
www.vishay.com
2
Document Number 85751
Rev. 1.3, 08-Jul-04
VISHAY
1N4148WS
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
17437
17439
Figure 1. Forward characteristics
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
17438
17440
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 4. Relative Capacitance vs. Reverse Voltage
Document Number 85751
Rev. 1.3, 08-Jul-04
www.vishay.com
3
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