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1N4004SGP1G

产品描述Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon
产品类别分立半导体    二极管   
文件大小188KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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1N4004SGP1G概述

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon

1N4004SGP1G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明O-PALF-W2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性HIGH RELIABILITY, LOW POWER LOSS
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-PALF-W2
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压400 V
表面贴装NO
端子面层Pure Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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1N4001SG thru 1N4007SG
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
-
φ0.6mm
leads
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Rectifiers
MECHANICAL DATA
Case:
A-405
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.2g (approximately)
mm
1N
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJA
T
J
T
STG
SG
50
35
50
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
1N
SG
100
70
100
1N
SG
200
140
200
1N
SG
400
280
400
1
30
1.0
5
100
10
80
- 55 to +150
- 55 to +150
O
en
de
1N
SG
600
420
600
1N
SG
800
560
800
1N
UNIT
V
V
V
A
A
V
μA
pF
C/W
O
O
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
4001 4002 4003 4004 4005 4006 4007
SG
1000
700
1000
Maximum average forward rectified current
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
No
tR
T
J
=25
o
C
T
J
=125
o
C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
e co
d
A-405
C
C
Version: E14
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1407028

 
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