<Sejrni-(2ontLtd:oi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
ne.
i, fi
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Designer's™ Data Sheet
Axial Lead Rectifiers
... employing the Schottky Barrier principle in a large area metal-to-silicon
power diode. State-of-the-art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low-voltage, high-frequency inverters, free
wheeling diodes, and polarity protection diodes,
• Extremely Low vp
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16" from case
• Shipped in plastic bags, 5,000 per bag
• Available Tape and Reeled, 1500 per reel, by adding a "RL" suffix to the
part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
VR(equiv)
*
0.2 V
R(dc)
, T
L
= 95°C
(
R
8JA
=
28°C/W, P.C. Board Mounting, see Note 2)
Ambient Temperature
Rated V
R
(
dc
), P
F
(AV) = °
R
e
j
A
= 28°C/W
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
Symbol
1N5820
20
1N5820
1N5821
1N5822
1N5820and 1N5822are
Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267-03
PLASTIC
1N5821
1N5822
Unit
VRRM
VRWM
VR
V
RSM
V
R(RMS)
30
40
V
24
14
-* -
36
21
30
48
28
»
V
V
A
"0
TA
90
85
80
°c
»•
IFSM
•*
80 (for one cycle)
A
T
J.
T
stg
°C
Tj(pk)
°c
Symbol
R
6JA
'THERMAL CHARACTERISTICS
(Note 2)
Characteristic
Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32" from case.
* Indicates JEDEC Registered Data for 1N5820-22.
Max
28
Unit
°C/W
NJ Semi-Coiiduetors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages
customers to verity that datasheets are current before placing orders.
1N5820 1N5821 1N5822
*ELECTRICAL CHARACTERISTICS
(T
L
= 25°C unless otherwise noted) (2)
Characteristic
Maximum Instantaneous Forward Voltage (1)
(IF = 1.0 Amp)
(ip = 3.0 Amp)
(ip = 9.4 Amp)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1 )
TL = 25°C
Symbol
1N5820
0.370
0.475
0.850
2.0
20
1N5821
0.380
0.500
0.900
2.0
20
1N5822
0.390
0.525
0.950
Unit
V
VF
|R
2.0
20
mA
TL = ioo°c
(1) Pulse Test: Pulse Width = 300 |is, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32" from case.
* Indicates JEDEC Registered Data for 1N5820-22.
NOTE 1 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
TA(max) = Tj(max) -
R
9JAPF(AV) -
R
ejA?R(AV) (1)
where TA(max)
=
Maximum allowable ambient temperature
Tj(max) = Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV)
=
Average forward power dissipation
PR(AV)
=
Average reverse power dissipation
R
9JA
=
Junction-to-ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
TR = Tj(max) -
R
9JA
p
R(AV)
Substituting equation (2) into equation (1) yields:
(2)
The data of Figures 1, 2, and 3 is based upon dc conditions. For use
in common rectifier circuits, Table 1 indicates suggested factors for
an equivalent dc voltage to use for conservative design, that is:
v
R(equiv)
= V(FM)
x F
(4)
The factor F is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: FindTA(
ma
x)
f
°'"1N5821 operated in a 12-voltdc sup-
ply using a bridge circuit with capacitive filter such that IDC
=
2-0 A
('F(AV) = 1.0 A), I(FM/'(AV) = 10, Input Voltage
=
10 V
(rrns)
, R
9JA
=
40°C/W.
Step 1. Find VR(
e
q
U
i
V
) Read F = 0.65 from Table 1,
..V
R(equiv)
= (1.41) (10) (0.65) = 9.2V.
Step 2. Find TR from Figure 2. Read TR = 108°C
@ VR = 9.2 V and R
Q
JA = 40°C/W,
Step 3. Find Pp(AV)
from
Figure 6 'Read Pp(AV) = 0.85 W
I(FM)
'•I^VJ ~ '"•"'" 'F(AV)
1.0 A.
TA(max) =
T
R - ReJAPF(AV)
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where T j = 125°C,
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115°C.
Step 4. Find T^(
max
) from equation (3).
TA(max) = 108 ~ (0.85) (40) = 74°C.
"Values given are for the 1N5821. Power is slightly lower for the
1N5820 because of its lower forward voltage, and higher for the
1N5822. Variations will be similar for the MBR-prefix devices, using
P
F(AV) '
rorri
Figure 7.
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
A
8
D
K
MIN
0.370
0190
MAX
0,380
0.210
0.052
9.40
MAX
9.65
5,33
1.32
483
1.22
0,048
1.000
—
25,40
STYLE 1:
PIN 1 CATHODE
2 ANODE
\
.0
\*
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