RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5400
THRU
1N5408
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
FEATURES
*
*
*
*
Low cost
Low leakage
Low forward voltage drop
High current capability
DO-201AD
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 1.18 grams
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.375 (9.5)
.335 (8.5)
.220 (5.6)
DIA.
.197 (5.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at T
L
= 105
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
o
Maximum DC Reverse Current
@T
A
= 25 C
at Rated DC Blocking Voltage
@T
A
= 100
o
C
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
L
= 75
o
C
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS
1.0
Volts
5.0
uAmps
50
30
uAmps
2003-2
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
θ
JA
T
J
, T
STG
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS
50
35
50
100
70
100
200
140
200
400
280
400
3.0
200
40
30
-55 to + 150
0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
pF
C/ W
0
C
I
R
RATING AND CHARACTERISTIC CURVES ( 1N5400 THRU 1N5408 )
FIG. 2 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, (A)
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
4
200
NON-REPETITIVE
3
2
1
0
0
25
50
75
100
125
150
LEAD TEMPERATURE, ( )
175
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm) Lead Length
100
50
REP
8.3ms Single Half
Sine-Wave
(JEDED Method)
ETIT
IVE
10
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
100
INSTANTANEOUS FORWARD CURRENT, (A)
JUNCTION CAPACITANCE, (pF)
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4
10 20 40
REVERSE VOLTAGE, ( V )
100
TJ = 25
30
10
3.0
1.0
TJ = 25
Pulse Width=300uS
1% Duty Cycle
.1
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
.3
.01
.4
INSTANTANEOUS REVERSE
CURRENT, (uA)
.6
.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, (V)
1.8
1.0
.1
TJ = 25
.01
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
RECTRON
嵌入式系统
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