DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
| 参数名称 | 属性值 |
| 厂商名称 | NXP(恩智浦) |
| 包装说明 | E-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| JESD-30 代码 | E-LALF-W2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 175 °C |
| 最大输出电流 | 1 A |
| 封装主体材料 | GLASS |
| 封装形状 | ELLIPTICAL |
| 封装形式 | LONG FORM |
| 认证状态 | Not Qualified |
| 最大重复峰值反向电压 | 200 V |
| 表面贴装 | NO |
| 端子形式 | WIRE |
| 端子位置 | AXIAL |
| Base Number Matches | 1 |
| 1N4003GT/R | GP1TTC502K29+/-0.5% | PRC1210TTC2580.6K+/-0.05% | |
|---|---|---|---|
| 描述 | DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode | RESISTOR, METAL FILM, 1W, 0.5%, 50ppm, 2290ohm, THROUGH HOLE MOUNT, AXIAL LEADED, LEAD FREE | Fixed Resistor, Thin Film, 0.25W, 80600ohm, 200V, 0.05% +/-Tol, -25,25ppm/Cel, 1210, |
| Reach Compliance Code | unknown | unknown | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 端子数量 | 2 | 2 | 2 |
| 最高工作温度 | 175 °C | 155 °C | 125 °C |
| 包装说明 | E-LALF-W2 | AXIAL LEADED, LEAD FREE | - |
| 封装形状 | ELLIPTICAL | TUBULAR PACKAGE | - |
| 封装形式 | LONG FORM | - | SMT |
| 表面贴装 | NO | NO | - |
| Objectid | - | 1298715450 | 939482386 |
| Country Of Origin | - | USA | Taiwan |
| YTEOL | - | 6.85 | 8.35 |
| JESD-609代码 | - | e3 | e3 |
| 最低工作温度 | - | -55 °C | -55 °C |
| 包装方法 | - | AMMO PACK; BULK; TR | TR |
| 额定功率耗散 (P) | - | 1 W | 0.25 W |
| 电阻 | - | 2290 Ω | 80600 Ω |
| 电阻器类型 | - | FIXED RESISTOR | FIXED RESISTOR |
| 技术 | - | METAL FILM | THIN FILM |
| 温度系数 | - | 50 ppm/°C | -25,25 ppm/°C |
| 端子面层 | - | TIN | Matte Tin (Sn) |
| 容差 | - | 0.5% | 0.05% |
| 工作电压 | - | 750 V | 200 V |
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