1N5226B - 1N5257B Series
1N5226B - 1N5257B Series Half Watt Zeners
Absolute Maximum Ratings*
Parameter
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
Total Device Dissipation
Derate above 75°C
Surge Power**
TA = 25°C unless otherwise noted
Tolerance: B = 5%
Value
-65 to +200
+ 200
+ 230
500
4.0
10
Units
°C
°C
°C
mW
mW/°C
W
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
**
Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
DO-35
Electrical Characteristics
Device
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
TA = 25°C unless otherwise noted
V
Z
(V)
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
Z
Z
(Ω)
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
@
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
Z
ZK
(Ω)
1,600
1,700
1,900
2,000
1,900
1,600
1,600
1,600
1,000
750
500
500
600
600
600
600
600
@
I
ZK
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
V
R
(V)
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
@
I
R
(µA)
25
15
10
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
T
C
(%/°C)
- 0.07
- 0.065
- 0.06
+/- 0.055
+/- 0.03
+/- 0.3
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
V
F
Foward Voltage = 1.1 V Maximum @ I
F
= 200 mA for all 1N5200 series
NOTE:
National preferred devices in
BOLD
©1997
Fairchild Semiconductor Corporation
1N5200B Rev. A
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