IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
1M x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
•
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
– V
DD
1.65V to 2.2V (IS61WV10248ALL)
speed = 20ns for Vcc = 1.65V to 2.2V
– V
DD
2.4V to 3.6V (IS61/64WV10248BLL)
speed = 10ns for Vcc = 2.4V to 3.6V
speed = 8ns for Vcc = 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
JUNE 2008
DESCRIPTION
The
ISSI
IS61WV10248ALL/BLL and IS64WV10248BLL
are very high-speed, low power, 1M-word by 8-bit CMOS
static RAM. The IS61WV10248ALL/BLL and
IS64WV10248BLL are fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design tech-
niques, yields higher performance and low power con-
sumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV10248ALL/BLL and IS64WV10248BLL
operate from a single power supply and all inputs are
TTL-compatible.
The IS61WV10248ALL/BLL and IS64WV10248BLL are
available in 48 ball mini BGA and 44-pin TSOP (Type II)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1M X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL
CIRCUIT
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/08
1
IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
TRUTH TABLE
Mode
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
D
OUT
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
Not Selected
(Power-down)
Output Disabled
Read
Write
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Relates to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
DD
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/08
3
IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 5%
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
V
DD
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width
≤
10 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width
≤
10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.4V-3.6V
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
V
DD
= Min., I
OH
= –1.0 mA
V
DD
= Min., I
OL
= 1.0 mA
Min.
1.8
—
2.0
–0.3
–1
–1
Max.
—
0.4
V
DD
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width
≤
10 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width
≤
10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 1.65V-2.2V
Symbol
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OL
= 0.1 mA
V
DD
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
V
DD
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width
≤
10 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width
≤
10 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/08
5
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