TSOP12..SR1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP12..SR1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP12..SR1 is the
standard IR remote control receiver series, support-
ing all major transmission codes.
1
2
3
19630
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
e3
• Improved shielding against electrical
field disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Special Features
• Improved immunity against ambient light
• Suitable burst length
≥
10 cycles/burst
Parts Table
Part
TSOP1230SR1
TSOP1233SR1
TSOP1236SR1
TSOP1237SR1
TSOP1238SR1
TSOP1240SR1
TSOP1256SR1
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Block Diagram
16832
Application Circuit
2
30 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
16842
3
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
= 100
Ω
V
S
C
1
=
4.7 µF
V
O
+V
S
1
Control Circuit
GND
OUT
GND
µC
GND
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
Document Number 84786
Rev. 1.0, 15-Sep-05
www.vishay.com
1
TSOP12..SR1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
10 s, > 1 mm from case
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
5
- 0.3 to + 6.0
5
100
- 25 to + 85
- 25 to + 85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Supply Voltage (Pin 2)
Transmission Distance
Output Voltage Low (Pin 3)
Minimum Irradiance (30 - 40
kHz)
Minimum Irradiance (56 kHz)
E
v
= 0, test signal see fig.1, IR
diode TSAL6200, I
F
= 400 mA
I
OSL
= 0.5 mA,E
e
= 0.7 mW/m
2
,
f = f
o
, test signal see fig. 1
Pulse width tolerance: t
pi
- 5/f
o
<
t
po
< t
pi
+ 6/f
o
, test signal see
fig.1
Pulse width tolerance: t
pi
- 5/f
o
<
t
po
< t
pi
+ 6/f
o
, test signal see
fig.1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
, test
signal see fig. 1
Angle of half transmission
distance
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
V
S
d
V
OSL
E
e min
0.35
4.5
35
250
0.5
Min
0.8
Typ.
1.2
1.5
5.5
Max
1.5
Unit
mA
mA
V
m
mV
mW/m
2
E
e min
0.4
0.6
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
± 45
W/m
2
deg
www.vishay.com
2
Document Number 84786
Rev. 1.0, 15-Sep-05
TSOP12..SR1
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
T
on
,T
off
– Output Pulse Width ( ms )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
t
t
pi
*
T
* t
pi
w
10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
d1 )
Output Signal
1)
2)
16110
7/f
0
<
t
d
<
15/f
0
t
pi
–5/f
0
<
t
po
<
t
pi
+6/f
0
t
po2 )
t
10.0
100.0 1000.010000.0
16909
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.0
t
po
– Output Pulse Width ( ms )
1.2
E
e min
/ E
e
– Rel. Responsivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
Output Pulse
1.0
0.8
0.6
0.4
0.2
0.0
0.7
f = f
0
"5%
Df
( 3dB ) = f
0
/10
0.9
1.1
1.3
Input Burst Duration
l
= 950 nm,
optical test signal, fig.1
10.0
100.0 1000.010000.0
16925
16908
E
e
– Irradiance ( mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E – Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 84786
Rev. 1.0, 15-Sep-05
www.vishay.com
3
TSOP12..SR1
Vishay Semiconductors
E
e min
– Threshold Irradiance ( mW/m
2
)
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f = f
o
f = 10 kHz
1.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15 0
15 30 45 60 75
T
amb
– Ambient Temperature ( C )
Sensitivity in dark ambient
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
90
16912
16918
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
S (
l
)
rel
– Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1050
1150
94 8147
94 8408
l
– Wavelength ( nm )
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.8
0.7
Max. Envelope Duty Cycle
0°
10°
20°
30°
0.6
40°
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
95 11339p2
1.0
0.9
0.8
f = 38 kHz, E
e
= 2
mW/m
2
0.7
50°
60°
70°
80°
0.6 0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative Transmission Distance
16913
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity
ϕ
x
www.vishay.com
4
Document Number 84786
Rev. 1.0, 15-Sep-05
TSOP12..SR1
Vishay Semiconductors
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation (see Figure 14 or Fig-
ure 15).
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
IR Signal
80°
0.6 0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative Transmission Distance
95 11339p2
Figure 13. Vertical Directivity
ϕ
y
IR Signal from fluorescent
lamp with low modulation
Suitable Data Format
The circuit of the TSOP12..SR1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some point in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP12..SR1 it can still receive the data signal. How-
ever the sensitivity is reduced to such a level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP12..SR1 are:
• DC light (e.g. from tungsten bulb or sunlight)
16920
0
5
10
Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
IR Signal
0
16921
5
10
Time ( ms )
15
20
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
Document Number 84786
Rev. 1.0, 15-Sep-05
www.vishay.com
5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
