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1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high-frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
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•
•
•
•
•
Extremely Low V
F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to
the part number
•
Pb-Free Packages are Available*
Mechanical Characteristics:
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
•
Case: Epoxy, Molded
•
Weight: 1.1 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
Polarity: Cathode indicated by Polarity Band
AXIAL LEAD
CASE 267-05
(DO-201AD)
STYLE 1
MARKING DIAGRAM
A
1N
582x
YYWWG
G
A
= Assembly Location
1N582x = Device Code
x
= 0, 1, or 2
YY
= Year
WW
= Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 10
Publication Order Number:
1N5820/D
1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1)
V
R(equiv)
v
0.2 V
R(dc)
, T
L
= 95°C
(R
qJA
= 28°C/W, P.C. Board Mounting, see Note 5)
Ambient Temperature
Rated V
R(dc)
, P
F(AV)
= 0
R
qJA
= 28°C/W
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75°C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
Symbol
V
RRM
V
RWM
V
R
V
RSM
V
R(RMS)
I
O
1N5820
20
1N5821
30
1N5822
40
Unit
V
24
14
36
21
3.0
48
28
V
V
A
T
A
90
85
80
°C
I
FSM
80 (for one cycle)
A
T
J
, T
stg
-65 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*THERMAL CHARACTERISTICS
(Note 5)
Characteristic
Thermal Resistance, Junction-to-Ambient
Symbol
R
qJA
Max
28
Unit
°C/W
*ELECTRICAL CHARACTERISTICS
(T
L
= 25°C unless otherwise noted) (Note 1)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 Amp)
(i
F
= 3.0 Amp)
(i
F
= 9.4 Amp)
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
T
L
= 25°C
T
L
= 100°C
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820-22.
Symbol
V
F
0.370
0.475
0.850
i
R
2.0
20
2.0
20
2.0
20
0.380
0.500
0.900
0.390
0.525
0.950
mA
1N5820
1N5821
1N5822
Unit
V
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2
1N5820, 1N5821, 1N5822
ORDERING INFORMATION
Device
1N5820
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
1N5821RL
1N5821RLG
1N5822
1N5822G
1N5822RL
1N5822RLG
Package
Axial Lead
Axial Lead
(Pb-Free)
Axial Lead
Axial Lead
(Pb-Free)
Axial Lead
Axial Lead
(Pb-Free)
Axial Lead
Axial Lead
(Pb-Free)
Axial Lead
Axial Lead
(Pb-Free)
Axial Lead
Axial Lead
(Pb-Free)
Shipping
†
500 Units/Bag
500 Units/Bag
1500/Tape & Reel
1500/Tape & Reel
500 Units/Bag
500 Units/Bag
1500/Tape & Reel
1500/Tape & Reel
500 Units/Bag
500 Units/Bag
1500/Tape & Reel
1500/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
1N5820, 1N5821, 1N5822
NOTE 3 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V
RWM
. Proper derating may be
accomplished by use of equation (1).
T
A(max)
= T
J(max)
*
R
qJA
P
F(AV)
*
R
qJA
P
R(AV)
(1)
where T
A(max)
= Maximum allowable ambient temperature
T
J(max)
= Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
P
F(AV)
= Average forward power dissipation
P
R(AV)
= Average reverse power dissipation
R
qJA
= Junction-to-ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
T
R
= T
J(max)
*
R
qJA
P
R(AV)
Substituting equation (2) into equation (1) yields:
T
A(max)
= T
R
*
R
qJA
P
F(AV)
(3)
Inspection of equations (2) and (3) reveals that T
R
is the
ambient temperature at which thermal runaway occurs or
where T
J
= 125°C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
Table 1. Values for Factor F
Circuit
Load
Sine Wave
Square Wave
Half Wave
Resistive
0.5
0.75
Capacitive*
1.3
1.5
Full Wave, Bridge
Resistive
0.5
0.75
Capacitive
0.65
0.75
Full Wave,
Center Tapped*†
Resistive
1.0
1.5
Capacitive
1.3
1.5
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
V
R(equiv)
= V
(FM)
F
(4)
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find T
A(max)
for 1N5821 operated in a
12-volt dc supply using a bridge circuit with capacitive filter
such that I
DC
= 2.0 A (I
F(AV)
= 1.0 A), I
(FM)
/I
(AV)
= 10, Input
Voltage = 10 V
(rms)
, R
qJA
= 40°C/W.
Step 1. Find V
R(equiv).
Read F = 0.65 from Table 1,
NV
R(equiv)
= (1.41) (10) (0.65) = 9.2 V.
Step 2. Find T
R
from Figure 2. Read T
R
= 108°C
@ V
R
= 9.2 V and R
qJA
= 40°C/W.
Step 3. Find P
F(AV)
from Figure 6. **Read P
F(AV)
= 0.85 W
@
I (FM)
+
10 and I F(AV)
+
1.0 A.
I (AV)
(2)
Step 4. Find T
A(max)
from equation (3).
T
A(max)
= 108
*
(0.85) (40) = 74°C.
**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
MBR-prefix devices, using P
F(AV)
from Figure 6.
*Note that V
R(PK)
[
2.0 V
in(PK)
.
†Use line to center tap voltage for V
in.
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