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1N17

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
产品类别分立半导体    二极管   
文件大小23KB,共2页
制造商Rectron
标准  
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1N17概述

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN

1N17规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Rectron
零件包装代码DO-41
包装说明ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
针数2
Reach Compliance Codenot_compliant
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY, LOW POWER LOSS
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.45 V
JEDEC-95代码DO-41
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流20 A
元件数量1
端子数量2
最高工作温度150 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)265
认证状态Not Qualified
最大重复峰值反向电压20 V
表面贴装NO
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N17
THRU
1N19
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
Low power loss, high efficiency
Low leakage
Low forward voltage
High current capability
High speed switching
High surge capabitity
High reliability
R-1
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.12 gram
.787 (20.0)
MIN.
.025 (0.65)
DIA.
.021 (0.55)
.126 (3.2)
.106 (2.7)
.102 (2.6)
DIA.
.091 (2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.787 (20.0)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at T
L
= 90
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Storage and Operating Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JA
C
J
T
J
, T
STG
1N17
20
14
20
1N18
30
21
30
1.0
20
80
110
-65 to + 150
1N19
40
28
40
UNITS
Volts
Volts
Volts
Amps
Amps
0
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.1A DC
Maximum Average Reverse Current at
Peak Reverse Voltage
@T
A
= 25 C
@T
A
= 100 C
o
o
o
SYMBOL
V
F
V
F
I
R
1N17
.45
.75
1N18
.55
.875
1.0
10
1N19
.60
.90
UNITS
Volts
Volts
mAmps
2001-6
NOTES : 1. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.

 
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