1N5059 to 1N5062
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
•
•
•
•
•
•
•
Controlled avalanche characteristics
Glass passivated
e2
Low reverse current
High surge current loading
Hermetically sealed axial-leaded glass envelope
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Rectification diode, general purpose
Mechanical Data
Case:
SOD-57 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 369 mg
Parts Table
Part
1N5059
1N5060
1N5061
1N5062
Type differentiation
V
R
= 200 V; I
FAV
= 2 A
V
R
= 400 V; I
FAV
= 2 A
V
R
= 600 V; I
FAV
= 2 A
V
R
= 800 V; I
FAV
= 2 A
SOD-57
SOD-57
SOD-57
SOD-57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
1N5059
1N5060
1N5061
1N5062
Peak forward surge current
Average forward current
Junction and storage
temperature range
Max. pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
Document Number 86000
Rev. 1.5, 13-Apr-05
I
(BR)R
= 1 A, indicutive load
t
p
= 10 ms, half-sinewave
R
thJA
= 45 K/W, T
amb
= 50 °C
R
thJA
= 100K/W, T
amb
= 75 °C
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
I
FAV
T
j
= T
stg
E
R
Value
200
400
600
800
50
2
0.8
- 55 to + 175
20
Unit
V
V
V
V
A
A
A
°C
mJ
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1
1N5059 to 1N5062
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Lead length l = 10 mm,
T
L
= constant
on PC board with spacing 25
mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
I
F
= 1 A
I
F
= 2.5 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
V
R
= V
RRM
, T
j
= 150 °C
Reverse breakdown voltage
I
R
= 100
µA
1N5059
1N5060
1N5061
1N5062
Reverse recovery time
Diode capacitance
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
V
R
= 0 V, f = 1 MHz
Test condition
Part
Symbol
V
F
V
F
I
R
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
C
D
40
225
450
650
900
Min
Typ.
Max
1
1.15
1
10
100
1600
1600
1600
1600
4
Unit
V
V
µA
µA
µA
V
V
V
V
µs
pF
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
P - Reverse Power Dissipation ( mW )
R
200
V
R
= V
RRM
160
120
80
40
0
25
R
thJA
=
45 K/W
100 K/W
160 K/W
1N5060
1N5059
1N5062
I
R
- Reverse Current (
µA
)
1000
V
R
= V
RRM
100
1N5061
10
1
0.1
50
75
100
125
150
175
15765
25
50
75
100
125
150
175
15764
T
j
- Junction Temperature (
°C
)
T
j
- Junction Temperature (
°C
)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 2. Max. Reverse Current vs. Junction Temperature
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2
Document Number 86000
Rev. 1.5, 13-Apr-05
1N5059 to 1N5062
Vishay Semiconductors
I
FAV
- Average Forward Current ( A )
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
R
thJA
= 100 K/W
PCB: d = 25 mm
20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (
°
C )
R
thJA
= 45 K/W
l =10 mm
C
D
- Diode Capacitance ( pF )
50
V
R
= V
RRM
half sinewave
f =1 MHz
40
30
20
10
0
0.1
15766
1
10
100
15763
V
R
- Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
100
I
F
- Forward Current ( A )
10
1
0.1
0.01
0.001
0
T
j
= 175
°C
T
j
= 25°C
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
F
- Forward Voltage ( V )
15762
Figure 4. Max. Forward Current vs. Forward Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
Cathode Identification
ISO Method E
94 9538
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
26(1.014) min.
Document Number 86000
Rev. 1.5, 13-Apr-05
www.vishay.com
3
1N5059 to 1N5062
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 86000
Rev. 1.5, 13-Apr-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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