电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N3030AUR-1E3

产品描述Zener Diode, 27V V(Z), 10%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2
产品类别分立半导体    二极管   
文件大小161KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 全文预览

1N3030AUR-1E3概述

Zener Diode, 27V V(Z), 10%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2

1N3030AUR-1E3规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码DO-213AB
包装说明O-LELF-R2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗35 Ω
JEDEC-95代码DO-213AB
JESD-30 代码O-LELF-R2
元件数量1
端子数量2
最高工作温度175 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
标称参考电压27 V
表面贴装YES
技术ZENER
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差10%
工作测试电流9.5 mA
Base Number Matches1

文档预览

下载PDF文档
1N3016BUR-1 thru 1N3051BUR-1, e3
(or MLL3016B thru MLL3051B, e3)
SCOTTSDALE DIVISION
Surface Mount 1.5 W
GLASS ZENER DIODES
DESCRIPTION
This surface mountable zener diode series is similar to the 1N3016 thru
1N3051 JEDEC registration in the DO-13 package except that it meets the
surface mount DO-213AB outline. It is an ideal selection for applications of
high density and low parasitic requirements. Due to its glass hermetic seal
qualities and metallurgically enhanced internal construction, it is also well
suited for high-reliability applications. This can be acquired by a source
control drawing (SCD), or by ordering device types with MQ, MX, or MV
prefix to part number for equivalent screening to JAN, JANTX or JANTXV.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-213AB
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Leadless surface mount package equivalents to the
JEDEC registered 1N3016 thru 1N3051 except with
higher power rating of 1.5 Watts
Ideal for high-density mounting
Voltage range: 6.8 to 200 volts
Hermetically sealed, double-slug glass construction
Metallurgically enhanced contact construction.
Options for screening in accordance with MIL-PRF-
19500/115 for JAN, JANTX, JANTXV, and JANS with
MQ, MX, MV, or MSP prefixes respectively for part
numbers, e.g. MX1N3016BUR-1, MV1N3051BUR-1,
etc.
Axial lead “thru-hole” DO-13 packages per JEDEC
registration available as 1N3016B thru 1N3051B (see
separate data sheet with MIL-PRF-19500/115
qualification)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Wide selection from 6.8 to 200 V
Tight voltage tolerances available
Low reverse (leakage) currents
Leadless package for surface mounting
Ideal for high-density mounting
Metallurgically enhanced internal contact design for
greater reliability and lower thermal resistance
Nonsensitive to ESD
Hermetically sealed glass package
Specified capacitance (see Figure 2)
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Power dissipation at 25
º
C: 1.5 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
º
C to
+175
º
C
Thermal Resistance: 40
º
C/W junction to end cap,
º
or 120 C/W junction to ambient when mounted on
FR4 PC board (1 oz Cu) with recommended
footprint (see last page)
Steady-State Power: 1.50 watts at end-cap
temperature T
EC
< 115
o
C, or 1.25 watts at T
A
= 25
º
C
when mounted on FR4 PC board and
recommended footprint as described for thermal
resistance (also see Figure 1)
Forward voltage @200 mA: 1.2 volts (maximum)
º
Solder Temperatures: 260 C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass MELF package
TERMINALS: Tin-lead or RoHS compliant
annealed matte-Tin plating solderable per MIL-
STD-750, method 2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Cathode band only
TAPE & REEL optional: Standard per EIA-481-1-A
with 12 mm tape, 1500 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.05 grams
See package dimensions on last page
1N3016BUR-1, e3 thru
1N3051BUR-1, e3
Copyright
©
2006
3-12-2006 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
嵌入式boa web 服务器移植
四个步骤简单移植BOA服务器 从http://www.boa.org/下载Boa源码,将其解压并进入源码目录的src子目录 # tar -zxvf boa-0.94.13.tar.gz 1 设置boa.conf文件设置(红色字体 ......
昱枫 Linux开发
机器人
机器人 209772 209773 ...
Orima 机器人开发
电设国奖奖品的申请问题讨论
本帖最后由 paulhyde 于 2014-9-15 03:44 编辑 在2013瑞萨杯全国大学生电子设计竞赛中使用瑞萨芯片并获奖的同学均可申请,截止时间2013年10月31日,请大家抓紧时间申请! 申请链接 http://cn ......
jackie0025 电子竞赛
招兼职(北京)TI CC2530移植Zstack协议
要求:1、移植TI的Zstack协议到CC2530上,分别实现终端、路由和协调器功能,每个设备上能运行3-5个任务(串口/IO/AD等);2、实现组网功能,各节点能互传数据;3、成果为最终源代码加必要注释, ......
dotsong 求职招聘
分享:无线充电手机各种功率的差异及EMC整改对策
目前市场上的无线充电手机主要分为5W,7.5W,10W和15W标准,而市场上默认是把5W称为普通无线充电,超过5W都称为支持快速无线充电,所以无线充电就有iPhone快充,三星快充,华为快充,LG快 ......
qwqwqw2088 模拟与混合信号
变压器的制作概述(繁体版改为简体的,PDF制作,有目录)
变压器的制作概述(繁体版改为简体的,PDF制作,有目录)...
tonytong 电源技术

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 803  2369  185  1157  2337  31  13  27  39  52 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved