IDT74FCT164245T
FAST CMOS 16-BIT BIDIRECTIONAL 3.3V TO 5V TRANSLATOR
INDUSTRIAL TEMPERATURE RANGE
FAST CMOS 16-BIT
BIDIRECTIONAL
3.3V TO 5V TRANSLATOR
FEATURES:
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•
•
•
IDT74FCT164245T
•
•
•
•
•
0.5 MICRON CMOS Technology
Bidirectional interface between 3.3V and 5V buses
Control inputs can be driven from either 3.3V or 5V circuits
ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
V
CC1
= 5V
±10%,
V
CC2
= 2.7V to 3.6V
High drive outputs (-32mA I
OH
, 64mA I
OL
) on 5V port
Power off disable on both ports permits “live insertion”
Typical V
OLP
(Output Ground Bounce) < 0.9V at V
CC1
= 5V,
V
CC2
= 3.3V, T
A
= 25°C
Available in SSOP and TSSOP packages
DESCRIPTION:
The FCT164245T 16-bit 3.3V-to-5V translator is built using advanced
dual metal CMOS technology. This high-speed, low-power transceiver is
designed to interface between a 3.3V bus and a 5V bus in a mixed 3.3V/
5V supply environment. This enables system designers to interface TTL
compatible 3.3V components with 5V components. The direction and output
enable controls operate these devices as either two independent 8-bit
transceivers or one 16-bit transceiver. The A port interfaces with the 3.3V
bus; the B port interfaces with the 5V bus. The direction control (xDIR) pin
controls the direction of data flow. The output enable pin (xOE) overrides
the direction control and disables both ports. These control signals can be
driven from either 3.3V or 5V devices.
The FCT164245T is ideally suited for driving high-capacitance loads
and low-impedance backplanes. The output buffers are designed with
power off disable capability to allow "hot insertion" of boards when used as
backplane drivers. They also allow interface between a mixed supply
system and external 5 volt peripherals.
FUNCTIONAL BLOCK DIAGRAM
1
DIR
1
48
1
A
1
47
2
1
A
2
46
3
1
A
3
44
5
1
B
3
1
B
2
2
A
3
33
16
2
B
3
1
B
1
2
A
2
35
14
2
B
2
1
OE
2
A
1
36
13
2
B
1
2
DIR
24
25
2
OE
3.3V Port
3.3V Port
1
A
4
43
2
A
4
32
17
5V Port
1
A
5
41
8
1
B
5
2
A
5
30
19
2
B
5
1
A
6
40
9
1
B
6
2
A
6
29
20
2
B
6
1
A
7
38
11
1
B
7
2
A
7
27
22
2
B
7
1
A
8
37
12
1
B
8
2
A
8
26
23
2
B
8
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
© 2016 Integrated Device Technology, Inc.
MAY 2016
DSC-2555/11
5V Port
6
1
B
4
2
B
4
IDT74FCT164245T
FAST CMOS 16-BIT BIDIRECTIONAL 3.3V TO 5V TRANSLATOR
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
1
DIR
1
B
1
1
B
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Operating Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Max
–0.5 to +7
–0.5 to Vcc
1
+0.5
–40 to +85
–55 to +125
–55 to +125
1
–60 to +120
Unit
V
V
°C
°C
°C
W
mA
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
SSOP/ TSSOP
TOP VIEW
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
V
TERM
(2)
1
OE
1
A
1
1
A
2
V
TERM
(3)
T
A
T
BIAS
T
STG
P
T
I
OUT
GND
1
B
3
1
B
4
GND
1
A
3
1
A
4
V
CC1
1
B
5
1
B
6
V
CC2
1
A
5
1
A
6
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. All devices except Vcc
2
.
3. Power supply terminal Vcc
2
.
GND
1
B
7
1
B
8
2
B
1
2
B
2
GND
1
A
7
1
A
8
2
A
1
2
A
2
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
3.5
3.5
Max.
6
8
Unit
pF
pF
NOTE:
1. This parameter is measured at characterization but not tested.
GND
2
B
3
2
B
4
GND
2
A
3
2
A
4
PIN DESCRIPTION
Pin Names
xOE
xDIR
xAx
xBx
Description
Output Enable Input (Active LOW)
Direction Control Input
Side A Inputs or 3-State Outputs (3.3V Port)
Side B Inputs or 3-State Outputs (5V Port)
V
CC1
2
B
5
2
B
6
V
CC2
2
A
5
2
A
6
GND
2
B
7
2
B
8
2
DIR
GND
2
A
7
2
A
8
2
OE
FUNCTION TABLE
(1)
Inputs
xOE
L
L
H
xDIR
L
H
X
Outputs
Bus B Data to Bus A
Bus A Data to Bus B
High Z State
POWER SUPPLY SEQUENCING
In the 74FCT164245T, the condition of V
CC1
≥
(V
CC2
–
0.5V) must be
maintained at all times. For the range of V
CC1
= (V
CC2
–
0.5V) to V
CC1
= (V
CC2
+
0.9V), both the A and B ports will remain in a High-Impedance state.
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
Z = High-Impedance
2
IDT74FCT164245T
FAST CMOS 16-BIT BIDIRECTIONAL 3.3V TO 5V TRANSLATOR
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (A PORT, 3.3V)
Following Conditions Apply Unless Otherwise Specified:
V
CC1
= 5V ±10%, V
CC2
= 2.7V to 3.6V, Industrial: T
A
= –40°C to +85°C
Symbol
V
IH
V
IL
I
IH
I
IL
V
IK
V
OH
Parameter
Input HIGH Level (Input and I/O pins)
Input LOW Level (Input and I/O pins)
Input HIGH Current (Input pins)
Input HIGH Current (I/O pins)
Input LOW Current (Input pins)
Input LOW Current (I/O pins)
Clamp Diode Voltage
Output HIGH Voltage
V
CC2
= Min., I
IN
= –18mA
V
CC1
= V
CC2
= Min.
V
IN
= V
IH
or V
IL
V
CC2
= 3V
V
IN
= V
IH
or V
IL
V
OL
Output LOW Voltage
V
CC1
= Min.
V
CC2
= Min.
V
IN
= V
IH
or V
IL
V
CC
= 3V
V
IN
= V
IH
or V
IL
I
OFF
I
OS
I
O
V
H
I
CC2L
I
CC2H
I
CC2Z
Input/Output Power Off Leakage
Short Circuit Current
(4)
Output Drive Current
Input Hysteresis
Quiescent Power Supply Current
V
CC1
= 0V, V
CC2
= 0V, V
IN
or V
O
≤
4.5V
V
CC1
= Max., V
CC2
= Max., V
O
= GND
(3)
V
CC1
= Max., V
CC2
= Max., V
O
= 1.5V
(3)
—
V
CC1
= Max.
V
CC2
= Max.
V
IN
= GND or V
CC2
—
–70
–40
—
—
—
–105
–60
150
0.35
±100
–150
–90
—
2
μA
mA
mA
mV
mA
I
OL
= 0.1mA
I
OL
= 16mA
I
OL
= 24mA
I
OL
= 24mA
—
—
—
—
—
0.2
0.3
0.3
0.2
0.4
0.55
0.5
V
I
OH
= –8mA
2.4
3
—
I
OH
= –0.1mA
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC1
= Max.
V
CC2
= Max.
V
I
= 5.5V
V
I
= V
CC2
V
I
= GND
V
I
= GND
Min.
2
–0.5
—
—
—
—
—
V
CC2
–0.2
Typ.
(2)
—
—
—
—
—
—
–0.7
—
Max.
5.5
0.8
±5
±15
±5
±15
–1.2
—
V
V
μA
Unit
V
V
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC1
= 5V, V
CC2
= 3.3V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not tested.
3
IDT74FCT164245T
FAST CMOS 16-BIT BIDIRECTIONAL 3.3V TO 5V TRANSLATOR
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (B PORT, 5V)
Following Conditions Apply Unless Otherwise Specified:
V
CC1
= 5V ±10%, V
CC2
= 2.7V to 3.6V, Industrial: T
A
= –40°C to +85°C
Symbol
V
IH
V
IL
I
IH
Parameter
Input HIGH Level (Input and I/O pins)
Input LOW Level (Input and I/O pins)
Input HIGH Current (Input pins)
Input HIGH Current (I/O pins)
I
IL
V
IK
V
OH
Input LOW Current (Input pins)
Input LOW Current (I/O pins)
Clamp Diode Voltage
Output HIGH Voltage
V
CC1
= Min., I
IN
= –18mA
V
CC1
= Min.
V
CC2
= Min.
V
IN
= V
IH
or V
IL
V
OL
Output LOW Voltage
V
CC1
= Min.
V
CC2
= Min.
V
IN
= V
IH
or V
IL
I
OFF
I
OS
I
O
V
H
I
CC1L
I
CC1H
I
CC1Z
Input/Output Power Off Leakage
Short Circuit Current
(4)
Output Drive Current
Input Hysteresis
Quiescent Power Supply Current
V
CC1
= 0V, V
CC2
= 0V, V
IN
or V
O
≤
4.5V
V
CC1
= Max., V
CC2
= Max., V
O
= GND
(3)
V
CC1
= Max., V
CC2
= Max., V
O
= 2.5V
—
V
CC1
= Max.
V
CC2
= Max.
V
IN
= GND or V
CC2
(3)
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC1
= Max.
V
CC2
= Max.
V
I
= GND
V
I
= V
CC1
Min.
2
–0.5
—
—
—
—
—
Typ.
(2)
—
—
—
—
—
—
–0.7
3.5
3.5
3
0.2
Max.
5.5
0.8
±5
±15
±5
±15
–1.2
—
—
—
0.55
Unit
V
V
μA
V
V
I
OH
= –3mA
I
OH
= –15mA
I
OH
= –32mA
(5)
I
OL
= 64mA
2.5
2.4
2
—
V
—
–80
–50
—
—
—
–140
–75
150
0.08
±100
–225
–180
—
1.5
μA
mA
mA
mV
mA
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC1
= 5V, V
CC2
= 3.3V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. Duration of the condition cannot exceed one second.
4
IDT74FCT164245T
FAST CMOS 16-BIT BIDIRECTIONAL 3.3V TO 5V TRANSLATOR
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
ΔI
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
Test Conditions
(1)
V
CC1
= Max., V
CC2
= Max.
V
IN
= V
CC2
- 0.6V
(3)
V
CC1
= Max., V
CC2
= Max.
Outputs Open
xOE = xDIR = GND
One Input Togging
50% Duty Cycle
V
CC1
= Max., V
CC2
= Max.
Outputs Open
f
I
= 10MHz
50% Duty Cycle
xOE = xDIR = GND
One Bit Toggling
V
CC1
= Max., V
CC2
= Max.
Outputs Open
f
I
= 2.5MHz
50% Duty Cycle
xOE = xDIR = GND
Sixteen Bits Toggling
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC1
= 5V, V
CC2
= 3.3V, +25°C ambient.
3. Per TTL driven input. All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC1
+ I
CC2
+ ΔI
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + fiNi)
I
CC1
= Quiescent Current (I
CC1L
, I
CC1H
and I
CC1Z
)
I
CC2
= Quiescent Current (I
CC2L
, I
CC2H
and I
CC2Z
)
ΔI
CC
= Power Supply Current for a TTL High Input
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
fi = Input Frequency
Ni = Number of Inputs at fi
Min.
—
Typ.
(2)
12
75
Max.
30
120
Unit
μA
μA/
MHz
V
IN
= V
CC2
V
IN
= GND
—
I
C
Total Power Supply Current
(6)
V
IN
= V
CC2
- 0.6V
V
IN
= GND
—
1.2
4.7
mA
V
IN
= V
CC2
- 0.6V
V
IN
= GND
—
3.5
8.5
(5)
5