Datasheet> 器件分类 > 存储> 存储> IS43R16320F-6TLI

IS43R16320F-6TLI: 产品描述DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, TSOP2-66; 产品类别存储存储; 文件大小795KB，共29页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS43R16320F-6TLI概述

DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, TSOP2-66

IS43R16320F-6TLI规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
包装说明	TSOP2,
Reach Compliance Code	compliant
ECCN代码	EAR99
Factory Lead Time	8 weeks
Is Samacsys	N
访问模式	FOUR BANK PAGE BURST
最长访问时间	0.7 ns
其他特性	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G66
长度	22.22 mm
内存密度	536870912 bit
内存集成电路类型	DDR DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	66
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	32MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED
座面最大高度	1.2 mm
自我刷新	YES
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	0.65 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	10.16 mm
Base Number Matches	1

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IS43/46R86400F

IS43/46R16320F

32Mx16, 64Mx8

512Mb DDR SDRAM

FEATURES

•

VDD and VDDQ: 2.5V ± 0.2V (-5, -6)

VDD and VDDQ: 2.5V ± 0.1V (-4)

SSTL_2 compatible I/O

Double-data rate architecture; two data transfers

per clock cycle

Bidirectional, data strobe (DQS) is transmitted/

received with data, to be used in capturing data

at the receiver

DQS is edge-aligned with data for READs and

centre-aligned with data for WRITEs

Differential clock inputs (CK and

CK)

DLL aligns DQ and DQS transitions with CK

transitions

Commands entered on each positive CK edge;

data and data mask referenced to both edges of

DQS

Four internal banks for concurrent operation

Data Mask for write data. DM masks write data

at both rising and falling edges of data strobe

Burst Length: 2, 4 and 8

Burst Type: Sequential and Interleave mode

Programmable CAS latency: 2, 2.5 and 3

Auto Refresh and Self Refresh Modes

Auto Precharge

Long-term Support

World Class Quality

DECEMBER 2016

DEVICE OVERVIEW

ISSI’s 512-Mbit DDR SDRAM achieves high speed data

transfer using pipeline architecture and two data word

accesses per clock cycle. The 536,870,912-bit memory

array is internally organized as four banks of 128Mb to

allow concurrent operations. The pipeline allows Read

and Write burst accesses to be virtually continuous, with

the option to concatenate or truncate the bursts. The

programmable features of burst length, burst sequence

and CAS latency enable further advantages. The device

is available in 8-bit and 16-bit word size. Input data is

registered on the I/O pins on both edges of Data Strobe

signal(s), while output data is referenced to both edges

of Data Strobe and both edges of CLK. Commands are

registered on the positive edges of CLK.

An Auto Refresh mode is provided, along with a Self

Refresh mode. All I/Os are SSTL_2 compatible.

ADDRESS TABLE

Parameter

Configuration

32M x 16

8M x 16 x 4

banks

64M x 8

16M x 8 x 4

banks

BA0, BA1

A10/AP

Bank Address BA0, BA1

Pins

Autoprecharge A10/AP

Pins

Row Address

Column

Address

1K(A0 – A9)

OPTIONS

8K(A0 – A12) 8K(A0 – A12)

2K(A0 – A9,

A11)

8K / 64ms

8K / 16ms

• Configuration(s): 32Mx16, 64Mx8

• Package(s):

66-pin TSOP-II

60-ball BGA

• Lead-free package available

• Temperature Range:

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)

Automotive, A1 (-40°C to +85°C)

Automotive, A2 (-40°C to +105°C)

Refresh Count

Com./Ind./A1

8K / 64ms

8K / 16ms

KEY TIMING PARAMETERS

Speed Grade

-4

-5

-6

Max CL = 3 250 200 167

Max CL = 2.5 167 167 167

Max CL = 2 133 133 133

Units

MHz

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest

version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. A

12/02/2016

IS43R16320F-6TLI相似产品对比

	IS43R16320F-6TLI	IS43R16320F-6TL	IS43R16320F-5BL	IS43R16320F-5BLI	IS43R16320F-6BLI
描述	DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, TSOP2-66	DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, TSOP2-66	DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60	DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60	DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60
是否Rohs认证	符合	符合	符合	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
包装说明	TSOP2,	TSOP2,	TBGA,	TBGA,	TBGA,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
Factory Lead Time	8 weeks	8 weeks	8 weeks	8 weeks	8 weeks
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	0.7 ns	0.7 ns	0.7 ns	0.7 ns	0.7 ns
其他特性	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G66	R-PDSO-G66	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
长度	22.22 mm	22.22 mm	13 mm	13 mm	13 mm
内存密度	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
内存宽度	16	16	16	16	16
功能数量	1	1	1	1	1
端口数量	1	1	1	1	1
端子数量	66	66	60	60	60
字数	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
字数代码	32000000	32000000	32000000	32000000	32000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	85 °C	85 °C
最低工作温度	-40 °C	-	-	-40 °C	-40 °C
组织	32MX16	32MX16	32MX16	32MX16	32MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TBGA	TBGA	TBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	BALL	BALL	BALL
端子节距	0.65 mm	0.65 mm	1 mm	1 mm	1 mm
端子位置	DUAL	DUAL	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	10.16 mm	10.16 mm	8 mm	8 mm	8 mm

IS43R16320F-6TLI

IS43R16320F-6TLI在线购买

IS43R16320F-6TLI概述

IS43R16320F-6TLI规格参数

文档预览

IS43R16320F-6TLI相似产品对比

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