MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF15090/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
•
Specified 26 Volts, 1490 MHz, Class AB Characteristics
Output Power — 90 Watts (PEP)
Gain — 7.5 dB Min @ 90 Watts (PEP)
Collector Efficiency — 30% Min @ 90 Watts (PEP)
Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP)
MRF15090
90 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
ARCHIVE INFORMATION
•
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
•
Characterized with Small–Signal S–Parameters from 1000–2000 MHz
•
Silicon Nitride Passivated
•
100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load
VSWR @ 28 Vdc, and Rated Output Power
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 375A–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous @ T
J(max)
= 150°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CES
V
EBO
I
C
P
D
T
stg
Value
25
60
4
15
250
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Symbol
Min
Typ
Max
0.70
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, R
BE
= 100
Ω)
V
(BR)CEO
V
(BR)CES
V
(BR)CER
25
60
30
28
65
—
—
—
—
Vdc
Vdc
Vdc
(continued)
REV 7
MOTOROLA RF
Motorola, Inc. 1998
DEVICE DATA
MRF15090
1
ARCHIVE INFORMATION
•
Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, V
CE
= 24 Vdc,
I
C
= 5 Adc
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(I
E
= 5 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
BE
= 0)
V
(BR)EBO
I
CES
4
—
4.8
—
—
10
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
CE
= 1 Adc, V
CE
= 5 Vdc)
h
FE
20
40
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 26 Vdc, I
E
= 0, f = 1 MHz) –
For Information Only. This Part Is Collector Matched.
C
ob
—
52
—
pF
ARCHIVE INFORMATION
FUNCTIONAL TESTS
(Figure 12)
Common–Emitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 90 W (PEP), I
CQ
= 250 mA,
f
1
= 1490 MHz, f
2
= 1490.1 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 90 W (PEP), I
CQ
= 250 mA,
f
1
= 1490 MHz, f
2
= 1490.1 MHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, P
out
= 90 W (PEP), I
CQ
= 250 mA,
f
1
= 1490 MHz, f
2
= 1490.1 MHz)
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 90 W (PEP), I
CQ
= 250 mA,
f
1
= 1490 MHz, f
2
= 1490.1 MHz)
Load Mismatch
(V
CC
= 28 Vdc, P
out
= 90 W (PEP), I
CQ
= 250 mA,
f
1
= 1490 MHz, f
2
= 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
G
pe
7.5
8.3
—
dB
η
30
36
—
%
IMD
—
– 32
– 28
dBc
IRL
12
15
—
dB
ψ
No Degradation in Output Power
MRF15090
2
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
120
Pout , OUTPUT POWER (WATTS)
100
80
60
40
20
0
V
CC
= 26 Vdc
I
CQ
= 250 mA
f = 1490 MHz Single Tone
0
4
8
12
P
in
, INPUT POWER (WATTS)
16
7.5
20
G
pe
9.0
100
P
in
= 15 W
P
out
G pe , GAIN (dB)
8.5
Pout , OUTPUT POWER (WATTS)
80
10 W
60
40
20
8.0
5W
V
CC
= 26 Vdc
I
CQ
= 250 mA
Single Tone
ARCHIVE INFORMATION
Figure 1. Output Power & Power Gain
versus Input Power
Figure 2. Output Power versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
- 20
3rd Order
10
9
G pe , POWER GAIN (dB)
8
7
6
5
4
3
2
1
120
0
1400
1420
1440
P
out
= 90 W (PEP)
V
CC
= 26 Vdc
I
CQ
= 250 mA
VSWR
1460 1480 1500
f, FREQUENCY (MHz)
1520
1540
G
pe
η
50
40
- 30
5th
- 40
7th
- 50
V
CC
= 26 Vdc
I
CQ
= 250 mA
f
1
= 1490 MHz
f
2
= 1490.1 MHz
0
20
60
80
40
100
P
out
, OUTPUT POWER (WATTS) PEP
30 3.0
INPUT VSWR
20
10
0
1560
2.5
2.0
1.5
1.0
- 60
Figure 3. Intermodulation Distortion
versus Output Power
- 20
- 25
- 30
- 35
- 40
- 45
- 50
- 55
- 60
0.1
750 mA
1
10
I
CQ
= 100 mA
250 mA
G pe , POWER GAIN (dB)
10
9
8
7
6
5
4
3
2
0.1
Figure 4. Performance in Broadband Circuit
IMD, INTERMODULATION DISTORTION (dBc)
I
CQ
= 750 mA
500 mA
500 mA
V
CC
= 26 Vdc
f
1
= 1490 MHz
f
2
= 1490.1 MHz
250 mA
V
CC
= 26 Vdc
f
1
= 1490 MHz
f
2
= 1490.1 MHz
100 mA
1
10
100
100
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
MRF15090
3
ARCHIVE INFORMATION
0
1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600
f, FREQUENCY (MHz)
η
, COLLECTOR
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
60
50
Pout , OUTPUT POWER (dBm)
30
20
10
0
G pe , POWER GAIN (dB)
40
Fundamental
3rd Order
V
CC
= 24 Vdc
I
C
= 5.0 Adc
f
1
= 1490 MHz
f
2
= 1490.1 MHz
15
20
25
30
35
P
in
, INPUT POWER (dBm)
40
45
50
9
8.5
8
7.5
7
6.5
6
18
I
CQ
= 250 mA
f
1
= 1490 MHz
f
2
= 1490.1 MHz
22
20
24
26
V
CC
, COLLECTOR SUPPLY VOLTAGE (Vdc)
IMD
-10
-15
- 20
- 25
- 30
- 35
- 40
28
IMD, INTERMODULATION DISTORTION (dBc)
G
pe
-10
- 20
- 30
- 40
10
ARCHIVE INFORMATION
Figure 7. Class A Third Order Intercept Point
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
10
I C , COLLECTOR CURRENT (Adc)
8
6
T
flange
= 100°C
4
2
T
J
= 175°C
0
0
4
16
12
20
V
CE
, COLLECTOR VOLTAGE (Vdc)
8
24
Breakdown Limited
MTBF FACTOR (HOURS x AMPS2 )
10
9
MTBF Limited
T
flange
= 75°C
10
8
10
7
10
6
28
10
5
100
120
140
160
200
180
220
T
J
, JUNCTION TEMPERATURE (°C)
240
260
Figure 9. DC Safe Operating Area
Figure 10. MTBF Factor versus
Junction Temperature
The graph above displays calculated MTBF in hours x ampere
2
emitter current. Life tests at elevated temperatures have correlated
to better than
±10%
of the theoretical prediction for metal failure.
Divide MTBF Factor by I
C2
for MTBF in a particular application.
MRF15090
4
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
f = 1.4 GHz
Z
in
1.6
Z
OL
*
1.5
1.55
1.45
1.45
1.5
1.55
1.6
Z
o
= 10
Ω
ARCHIVE INFORMATION
f = 1.4 GHz
f
(MHz)
1400
1450
1500
1550
1600
Z
in
(Ω)
3.28 + j9.07
3.85 + j10.4
4.55 + j11.4
5.45 + j11.9
6.20 + j12.2
Z
OL
*
(Ω)
Z
in
4.62 + j2.23
4.35 + j3.41
4.08 + j3.60
3.80 + j3.78
3.55 + j3.84
= Input impedance is a balanced base to
base measurement.
Conjugate of optimum load impedance
collector to collector into which the device
operates at a given output power, bias
current, voltage and frequency.
Z
OL
* =
Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ P
out
= 90 Watts (PEP),
V
CC
= 26 Volts, I
CQ
= 250 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz
Table 1. Common Emitter S–Parameters (for One Side of Push–Pull MRF15090) at V
CE
= 24 Vdc, I
C
= 2.5 Adc
f
MHz
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
S
11
|S
11
|
0.999
0.999
0.994
0.992
0.994
0.986
0.982
0.973
0.957
0.938
0.903
0.857
0.821
0.837
0.872
0.901
0.920
0.940
0.954
0.965
0.971
∠φ
172
171
170
170
169
168
167
166
164
163
162
163
165
169
170
170
170
169
169
168
167
|S
21
|
0.164
0.179
0.196
0.216
0.241
0.269
0.306
0.351
0.408
0.483
0.571
0.651
0.673
0.623
0.529
0.437
0.363
0.309
0.265
0.232
0.205
S
21
∠φ
108
103
97
92
86
80
73
66
56
44
29
10
–14
– 37
– 56
–70
– 81
– 90
– 98
–104
–110
|S
12
|
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.014
0.013
0.011
0.009
0.008
0.007
0.008
0.008
0.009
0.010
S
12
∠φ
72
69
66
63
62
57
51
45
33
22
7
–13
– 40
– 67
–104
–138
–165
173
150
139
132
|S
22
|
0.957
0.956
0.948
0.940
0.935
0.924
0.915
0.905
0.888
0.876
0.859
0.855
0.877
0.902
0.922
0.931
0.932
0.930
0.932
0.930
0.929
S
22
∠φ
173
172
172
171
171
170
170
170
170
170
171
173
174
174
173
172
171
170
169
169
168
MOTOROLA RF DEVICE DATA
MRF15090
5
ARCHIVE INFORMATION
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