OM1N100SA OM5N100SA OM1N100ST
OM3N100SA OM6N100SA OM3N100ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE
1000V, Up To 6 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM1N100SA
OM3N100SA
OM5N100SA
OM6N100SA
OM3N100ST
OM1N100ST
R
DS(on)
8.0
5.2
3.0
2.0
5.4
8.2
I
D
1.0A
3.5A
5.0A
6.0A
3.5A
1.0A
3.1
SCHEMATIC
DRAIN
PIN CONNECTION
TO-254AA
TO-257AA
GATE
SOURCE
1 2 3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1 2 3
4 11 R1
Supersedes 2 05 R0
3.1 - 15
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM3N100SA
(See Note 3)
Min. Typ. Max. Units Test Conditions
1000
I
D
= 250
mA
2.0
100
- 100
0.25
1.0
V
GS
= 0, T
C
= 125° C
I
D(on)
V
GS
= 10 V
R
DS(on)
Static Drain-Source On-State
Resistance
1, 3
ST
SA
ST
10.4
I
D
=.5A, T
C
= 100° C
10.0
V
GS
= 10 V
5.4
I
D
=.5A
R
DS(on)
Static Drain-Source On-State
Resistance
1, 3
SA
5.2
V
GS
= 10 V
On-State Drain Current
3.5
A
V
DS
> I
D(on)
x R
DS(on)
Max
mA
V
DS
= 0.8 x Max. Rat.,
mA
V
DS
= Max. Rat., V
GS
= 0
nA
V
GS
= - 20 V
nA
V
GS
= 20 V
4.0
V
V
DS
= V
GS,
I
D
= 250
mA
V
V
GS
= 0,
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Current
Zero Gate Voltage Drain
Gate-Body Leakage Reverse
Gate-Body Leakage Forward
Gate-Threshold Voltage
STATIC P/N OM1N100SA
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max.
V
GS
= 10 V
V
GS
= 10 V
I
D
=.5A
V
GS
= 10 V
I
D
=.5A, T
C
= 100° C
(See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
V
Voltage
OM1N100SA/ST Series
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
I
GSSF
Gate-Body Leakage Forward
100
nA
I
GSSR
Gate-Body Leakage Reverse
-100
nA
I
DSS
Zero Gate Voltage
0.25
mA
Drain Current
1.0
mA
I
D(on)
On-State Drain Current
1.0
A
R
DS(on)
Static Drain-Source On-State
SA
8.0
Resisitance
1, 3
ST
8.2
R
DS(on)
Static Drain-Source On-State
SA
15.0
Resistance
1, 3
ST
15.4
DYNAMIC
V
DS
= 10V, I
D
= 1 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
T
d(on)
t
r
T
d(off)
t
f
Fall Time
75
Turn-Off Delay Time
115
Rise Time
90
Turn-On Delay Time
90
ns
ns
ns
ns
C
rss
Reverse Transfer Capacitance
40
pF
C
oss
Output Capacitance
110
pF
C
iss
Input Capacitance
950
pF
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
g
fs
Forward Transductance
1.0
S
DYNAMIC
V
DS
= 10, I
D
= 1.5 A
g
fs
Forward Transductance
1.0
S
3.1 - 16
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
C
iss
Input Capacitance
950
pF
C
oss
Output Capacitance
110
pF
C
rss
Reverse Transfer Capacitance
40
pF
T
d(on)
Turn-On Delay Time
90
ns
t
r
Rise Time
90
ns
T
d(off)
Turn-Off Delay Time
115
ns
VDD = 600 V, ID = 3.5
V
DD
= 600 V,
I
D
= 3.5
RG = 50W VGS
=
10 V
,
t
f
Fall Time
75
ns
RG = 50W VGS = 10 V
,
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
S
G
I
S
(Body Diode)
I
SM
(Body Diode)
V
SD
t
rr
Diode Forward
Voltage
2
Source Current
1
Continuous Source Current
3.5
A
I
S
Continuous Source Current
3.5
14
2.5
900
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
(Body Diode)
I
SM
T
C
= 25 C, I
S
= 3.5 A, V
GS
= 0
I
F
= I
S
, V
DD
= 100 V
dl
F
/ds = 100 A/ms, T
J
= 150 C
Source Current
1
14
A
(Body Diode)
S
V
SD
Diode Forward
Voltage
2
2.5
V
T
C
= 25 C, I
S
= 3.5 A, V
GS
= 0
I
F
= I
S
, V
DD
= 100 V
dl
F
/ds = 100 A/ms, T
J
= 150 C
t
rr
Reverse Recovery Time
900
ns
Reverse Recovery Time
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3
OM1N100ST - All characteristics the same except R
DS(on)
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3
OM3N100ST - All characteristics the same except R
DS(on)
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6N100SA
(See Note 3)
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Current
V
GS
= 0, T
C
= 125° C
I
D(on)
V
GS
= 10 V
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
T
C
= 100° C
4.0
V
GS
= 10 V, I
D
= 3.0 A
2.0
V
GS
= 10 V, I
D
= 3.0 A
On-State Drain Current
6.0
A
V
DS
> I
D(on)
x R
DS(on)
Max.,
1.0
mA
V
DS
= 0.8 x Max. Rat.,
Zero Gate Voltage Drain
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V, V
DS
= 0
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V, V
DS
= 0
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
mA
I
D
= 250
mA
1000
V
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
STATIC P/N OM5N100SA
(See Note 3)
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max.,
V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A
T
C
= 100 C
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
V
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
I
GSSF
Gate-Body Leakage Forward
100
nA
I
GSSR
Gate-Body Leakage Reverse
-100
nA
I
DSS
Zero Gate Voltage
0.25
mA
Drain Current
1.0
mA
I
D(on)
On-State Drain Current
5.0
A
R
DS(on)
Static Drain-Source On-State
3.0
Resisitance
1
R
DS(on)
Static Drain-Source On-State
6.0
Resistance
1
DYNAMIC
V
DS
= 25 V
DS(on)
, I
D
= 2.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
T
d(on)
t
r
V
DD
= 800 V,
I
D
=6A
DYNAMIC
g
fs
C
iss
C
oss
C
rss
Turn-On Delay Time
Rise Time
Fall Time
55
62
25
65
ns
ns
ns
ns
V
DD
= 800 V,
I
D
= 6A
RG = 7W VGS
=
10 V
,
g
fs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
150
pF
350
pF
2600
pF
V
GS
= 0
Forward Transductance
4.0
S
Forward Transductance
4.0
S
V
DS
= 25V, I
D
= 3.0 A
V
DS
= 25 V
f = 1 MHz
3.1 - 17
T
r
(V
off
) Off-Voltage Rise Time
t
f
RG = 7W VGS
=
10 V
,
C
iss
Input Capacitance
2600
pF
C
oss
Output Capacitance
350
pF
C
rss
Reverse Transfer Capacitance
150
pF
T
d(on)
Turn-On Delay Time
65
ns
t
r
Rise Time
55
ns
T
r(
V
off)
Off-Voltage Rise Time
62
ns
t
f
Fall Time
25
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
S
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
(Body Diode)
I
SM
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
1000
2.5
V
ns
Source
Current
2
24
A
Continuous Source Current
6
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
I
S
Continuous Source Current
6
A
(Body Diode)
I
SM
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
I
F
= I
S
,V
DD
= 100 V
dl
F
/ds = 100 A/ms
Source
Current
2
24
A
(Body Diode)
S
V
SD
Diode Forward Voltage
1
2.5
V
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
I
F
= I
S
,V
DD
= 100 V
dl
F
/ds = 100 A/ms, T
J
= 150 C
t
rr
Reverse Recovery Time
1100
ns
OM1N100SA/ST Series
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3.
Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3.
Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
3.1
OM1N100SA/ST Series
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
OM1N100SA OM3N100SA OM5N100SA OM6N100SA
OM1N100ST OM3N100ST
Units
I
AR
Avalanche Current
(Repetitive or Non-Repetitive)
T
j
= 25°C
T
j
= 100°C
3.5
2
130
3.5
2
130
6
3.4
850
6
3.4
850
A
A
mJ
E
AS
Single Pulse Avalanche Energy
Starting T
j
= 25°C, I
D
= I
AR
,
V
DD
= 25V
E
AR
Repetitive Avalanche Energy
(Pulse width limited by T
J
max,
d
< 1%)
6
6
16
16
mJ
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
V
GS
P
D
@ T
C
= 25°C
P
D
@ T
C
=100°C
Junction-To-Case
Drain-Source Voltage
Drain-Source Voltage (R
GS
= 20k )
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1000
1000
.50
.30
14
±20
90
32
.87
.020
1000
1000
3.5
2.0
14
±20
90
32
.87
.020
1000
1000
5.0
3.1
24
±20
130
51
2.10
.020
1000
1000
6.0
3.7
24
±20
130
51
2.10
.020
V
V
A
A
A
V
W
W
W/°C
W/°C
Junction-To-Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10secs.)
-55 to 150
300
-55 to 150
300
-55 to 150
300
-55 to 150
300
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
THERMAL RESISTANCE
3.1
R
thJC
Junction-To-Case
Max.
1.15
1.15
.48
.48
°C/W
MECHANICAL OUTLINE
TO-257AA
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
.430
.410
.038 MAX.
.550
.510
.005
.800
.790
.144 DIA.
TO-254AA
.545
.535
.050
.040
.150
.140
.685
.665
.550
.530
.750
.500
.005
.045
.035
.150 TYP.
.260
.249
.150 TYP.
.035
.025
.100 TYP.
.120 TYP.
PACKAGE OPTIONS
FET 4 FET 3
G SDGSD
D SGGS D
D
S
FET 1
G
G
S
FET 2
D
FET 1
FET 3
Z-TAB
6 PIN SIP
MOD PAK
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA
MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
