电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JANTXV1N6677-1

产品描述Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-35, HERMETIC SEALED PACKAGE-2
产品类别分立半导体    二极管   
文件大小378KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

JANTXV1N6677-1在线购买

供应商 器件名称 价格 最低购买 库存  
JANTXV1N6677-1 - - 点击查看 点击购买

JANTXV1N6677-1概述

Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-35, HERMETIC SEALED PACKAGE-2

JANTXV1N6677-1规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码DO-35
包装说明HERMETIC SEALED PACKAGE-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-35
JESD-30 代码O-XALF-W2
JESD-609代码e0
元件数量1
端子数量2
最大输出电流0.2 A
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Qualified
参考标准MIL-19500/610E
最大重复峰值反向电压40 V
表面贴装NO
技术SCHOTTKY
端子面层Tin/Lead (Sn/Pb)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
1N6675-1 – 1N6677-1 plus
DSB0.5A20 – DSB0.5A40
Qualified Levels*:
JAN, JANTX,
JANTXV and JANS
Available on
commercial
versions
200 and 500 mA Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/610
DESCRIPTION
The 1N6675-1 through 1N6677-1 series of Schottky barrier rectifiers provides a selection of
200 or 500 mA ratiings in an axial-leaded, hard glass DO-35 package. The 1N6677-1 is also
available in JAN, JANTX, JANTXV, and JANS military qualifications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 1N6675 through 1N6677 number series.
Hermetically sealed.
Metallurgically bonded.
Double plug construction.
*JAN, JANTX, JANTXV and JANS qualification are available per MIL-PRF-19500/610 for 1N6677-1
only.
RoHs compliant versions are available on all commercial types.
DO-35
(DO-204AH)
Package
Also available in:
DO-213AA MELF
(surface mount)
1N6675UR-1 – 1N6677UR-1
APPLICATIONS / BENEFITS
Flexible axial-lead mounting terminals.
Non-sensitive to ESD per MIL-STD-750 method 1020.
MAXIMUM RATINGS
@
T
A
= 25
ºC
unless otherwise stated
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Lead
@ lead length = 0.375 inch (9.52 mm) from body
Surge Peak Forward Current at 8.3 ms half-sine wave for
1N6677-1
Average Rectified Output Current:
(1)
1N6675-1 – 1N6677-1
DSB0.5A20 – DSB0.5A40
Solder Temperature @ 10 s
NOTES:
1. See
Figure 1
derating.
Symbol
T
J
T
STG
R
ӨJL
I
FSM
Value
-65 to +125
-65 to +150
250
5
Unit
ºC
ºC
ºC/W
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
O
200
500
260
mA
o
C
T4-LDS-0302, Rev. 1 (6/13/13)
©2013 Microsemi Corporation
Page 1 of 5

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2110  2619  366  2743  733  14  35  47  16  3 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved