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JAN1N5194US

产品描述Rectifier Diode, 1 Element, 0.2A, 80V V(RRM),
产品类别分立半导体    二极管   
文件大小155KB,共15页
制造商Microsemi
官网地址https://www.microsemi.com
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JAN1N5194US概述

Rectifier Diode, 1 Element, 0.2A, 80V V(RRM),

JAN1N5194US规格参数

参数名称属性值
厂商名称Microsemi
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
配置SINGLE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
最大非重复峰值正向电流2 A
元件数量1
最高工作温度175 °C
最大输出电流0.2 A
最大重复峰值反向电压80 V
表面贴装YES
Base Number Matches1

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 19 October 2007.
INCH-POUND
MIL-PRF-19500/118H
19 July 2007
SUPERSEDING
MIL-PRF-19500/118G
22 June 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON,
TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR,
1N5195US,1N5196, 1N5196UR, AND 1N5196US, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments and Agencies
of the Department of Defense.
The requirements for acquiring the product described herein shall consist
of this specification sheet and MIL-PRF-19500.
Types 1N483B, 1N485B, 1N486B are inactive for new design. See 6.4.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon diodes. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, figure 2 (DO-213AA), and figure 3.
1.3 Maximum ratings. TA = +25°C unless otherwise specified.
VRM VRWM
Type (1)
IO
(1) (2)
TA=75°C
mA
200
IO
TA =
150°C
mA
50
TJ and
IFSM
R
ΘJL
R
ΘJEC
R
ΘJA(PCB)
tp = 1/120 s TSTG
L=
LD = 0
.375 inch
TA = 25°C
(9.53 mm)
A
°C
°C/W
°C/W
°C/W
250
2
-65 to
250
275
+175
100
40
250
250
100
40
250
250
100
40
V (pk) V (pk)
1N483B
1N5194
1N5194UR
1N5194US
1N485B
1N5195
1N5195UR
1N5195US
1N486B
1N5196
1N5196UR
1N5196US
80
70
200
180
250
225
(1) The electrical characteristics for UR and US suffix devices are identical to their corresponding leaded devices
unless otherwise noted (applies only to the 1N5194, 1N5195, and 1N5196).
(2) Derate 1.2 mA/°C between 25°C and 150°C. Derate 2 mA/°C between 150°C and 175°C (see figure 4).
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil .
AMSC N/A
FSC 5961

JAN1N5194US相似产品对比

JAN1N5194US 066561T250GP1E 066561T250GT0 JANTX1N5195US 066R151U250GP2E
描述 Rectifier Diode, 1 Element, 0.2A, 80V V(RRM), CAP,AL2O3,560UF,250VDC,10% -TOL,50% +TOL CAP,AL2O3,560UF,250VDC,10% -TOL,50% +TOL Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), CAP,AL2O3,150UF,250VDC,10% -TOL,75% +TOL
Reach Compliance Code compliant unknown unknown compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最高工作温度 175 °C 85 °C 85 °C 175 °C 105 °C
是否无铅 - 含铅 含铅 - 含铅
是否Rohs认证 - 不符合 不符合 - 不符合
Objectid - 1170089718 1170089729 - 1189327036
电容 - 560 µF 560 µF - 150 µF
电容器类型 - ALUMINUM ELECTROLYTIC CAPACITOR ALUMINUM ELECTROLYTIC CAPACITOR - ALUMINUM ELECTROLYTIC CAPACITOR
直径 - 19.3 mm 19.3 mm - 19.3 mm
介电材料 - ALUMINUM ALUMINUM - ALUMINUM
JESD-609代码 - e0 e0 - e0
长度 - 69.85 mm 95.25 mm - 69.85 mm
制造商序列号 - 066 066 - 066R
负容差 - 10% 10% - 10%
端子数量 - 2 2 - 2
最低工作温度 - -40 °C -40 °C - -40 °C
封装形式 - Axial Axial - Axial
极性 - POLARIZED POLARIZED - POLARIZED
正容差 - 50% 50% - 75%
额定(直流)电压(URdc) - 250 V 250 V - 250 V
系列 - 066 066 - 066R
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)

 
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